移動体通信を支える高周波デバイス - 東芝
移動体通信を支える高周波デバイス - 東芝
移動体通信を支える高周波デバイス - 東芝
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RF Device Support for Mobile Communications<br />
<br />
TADA Noboru<br />
<br />
SAITO Masahisa<br />
<br />
YAMAMOTO Tomohiko<br />
<br />
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The cellular phone system is changing from an 800 MHz AMPS/TACS (advanced mobile phone service/total access<br />
communication system) analog system to an 800-900 MHz TDMA/GSM (time division multiple access/global system for mobile<br />
communications) digital system. Recently, the number of subscribers to the CDMA (code division multiple access) system, which<br />
was launched in the United States and Korea ahead of other countries, has been increasing. In addition, the cellular system is<br />
shifting to a high frequency for DCS/PCS (digital cellular system/personal communication system) systems using 1,800 MHz.<br />
We are developing an RF power amplifier for CDMA use in the PCS band (for the Tx port) ; a wideband amplifier called Cell-<br />
Pack using the SMART-2 (silicon monolithic architecture for RF technology2) process (for the Rx port) ; and the MT series<br />
microwave transistors for voltage control oscillator (VCO) use (also for the Rx port).<br />
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MT <br />
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MT series microwave transistor<br />
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MT3S04T <br />
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Chip photograph of MT3SO4T<br />
2SC5086FT <br />
Comparison data with 2SC5086FT<br />
MT3S04T <br />
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100 <br />
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84 <br />
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100 <br />
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100 <br />
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70 <br />
tVG<br />
40 <br />
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VG<br />
86 <br />
30 <br />
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2SC5086FT 100 MTS04T <br />
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C re pF<br />
1.5<br />
1.0<br />
0.5<br />
MT3S04T<br />
2SC5086FT<br />
0<br />
0 1 2 3 4 5 6<br />
V CB V<br />
C re VCB <br />
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C reVCB characteristics<br />
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S 21<br />
2 dB<br />
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10<br />
5<br />
MT3S04T<br />
2SC5086FT<br />
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I C = 20 mA<br />
f = 1GHz<br />
Ta = 25 <br />
0<br />
0 1 2 3 4 5 6<br />
f T GHz<br />
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20<br />
10<br />
SMART-2<br />
4<br />
5 m<br />
10 m<br />
20 m<br />
30 m<br />
SMART-1<br />
20m<br />
4<br />
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V CE =1.2 Vf=2 GHz<br />
V CE V<br />
|S21| 2 VCE <br />
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|S21| 2 VCE characteristics<br />
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0<br />
0.1 1 10 100<br />
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SMART-2 fT IC -<br />
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fT IC electrical characteristics of SMART-2 process transistor<br />
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4 <br />
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TA4016AFE <br />
Electrical characteristics of TA4016AFE chip<br />
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ICC VCC=2 V<br />
6mA<br />
BW VCC=2 V 3.4 GHz<br />
S21 2 VCC=2 Vf=1.5 GHz 19 dB<br />
NF VCC=2 Vf=1.5 GHz 4.5 dB<br />
S12 2 VCC=2 Vf=1.5 GHz 33 dB<br />
S11 2 VCC=2 Vf=1.5 GHz 14 dB<br />
S22 2 VCC=2 Vf=1.5 GHz 7dB<br />
1dB PO1dB VCC=2 Vf=1.5 GHz 7 dBmW<br />
S 21<br />
2 dB<br />
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25<br />
20<br />
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10<br />
5<br />
BW Band Width<br />
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VCC = 2 VICC = 6.0 mA<br />
f=1.5GHz S21 2 3dB down <br />
0<br />
0.1 1 10<br />
GHz<br />
TA4016AFE |S21| 2 f <br />
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|S21| 2 f electrical characteristics of TA4016AFE chip<br />
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CDMA MMIC T8999 <br />
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T8999 monolithic microwave integrated circuit (MMIC) for CDMA use<br />
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120<br />
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AlGaAs HBT<br />
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InGaP HBT<br />
GaAs HBT <br />
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High-temperature bias test of InGaP vs. AlGaAs heterojunction bipolar<br />
transistors (HBTs)<br />
PodBmW <br />
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G P<br />
P O<br />
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20 15 10 5 0 10<br />
E ff<br />
ACP<br />
PidBmW<br />
T8999 <br />
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Output power Input power (PO P i) data of T8999 MMIC<br />
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TADA Noboru<br />
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SAITO Masahisa<br />
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YAMAMOTO Tomohiko<br />
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