GTAT_Corporate_Overview
GTAT_Corporate_Overview
GTAT_Corporate_Overview
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ASF®<br />
MOCVD<br />
HVPE – Breakthrough Value<br />
Current Process - MOCVD Only<br />
pGaN<br />
pAlGaN<br />
HVPE+MOCVD<br />
pGaN<br />
pAlGaN<br />
ASF® HVPE MOCVD<br />
MQWs<br />
MQWs<br />
SLS<br />
nGaN<br />
uGaN<br />
SLS<br />
nGaN<br />
Nucleation/Transition Layer<br />
Sapphire<br />
Sapphire<br />
Benefits of HVPE<br />
• Helps drive ~25% reduction in the Epi stack cost<br />
(Higher growth rates, lower consumable/precursor costs)<br />
• Increases LED quality (thicker/less defective nGaN layer)<br />
• Significantly increases throughput/ reduces Capex for MOCVDs<br />
© 2013 GT AT Corporation. All Rights Reserved. 26
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