GTAT_Corporate_Overview

Silicon Carbide (SiC) Sublimation Technology
• No other capable SiC merchant
equipment suppliers
• GT released its first generation silicon
carbide sublimation furnace in Q2 2013
and is developing differentiated process
recipes that will provide a path to
producing lower cost SiC
– Targeting 4” solution release in 1H14;
6” solution by end of 2014
• Expect SiC business will ramp slowly
given long design-in cycles for new
power devices
• Longer-term, growth opportunity is in
pairing SiC with Hyperion technology
SiC is a high-temperature
semiconductor material used in
power electronics devices
GT SiClone sublimation furnace (above)
GT-grown SiC boules (below)
©2013 GTAT Corporation. All rights reserved.
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