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Invited Talks: Transition Metal Oxides - University Blog Service - The ...

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<strong>The</strong> John B. Goodenough Symposium in Materials Science & Engineering –<br />

In Honor of His 90 th Birthday<br />

<strong>The</strong> <strong>University</strong> of Texas at Austin, Austin, Texas<br />

October 26-27, 2012<br />

Electrodeposition of Amorphous Silicon Anode for Lithium Ion Batteries<br />

Rigved Epur a , Madhumati Ramanathan b , Faith R. Beck a,c ,<br />

A. Manivannan c and Prashant N. Kumta a,b,d,†<br />

aDepartment of Mechanical Engineering and Materials Science, <strong>University</strong> of Pittsburgh,<br />

Pittsburgh, PA 15261, USA<br />

bDepartment of Bioengineering, <strong>University</strong> of Pittsburgh, Pittsburgh, PA 15261, USA<br />

cUS Department of Energy, National Energy Technology Laboratory, Morgantown, WV 26507, USA<br />

dDepartment of Chemical and Petroleum Engineering, <strong>University</strong> of Pittsburgh, Pittsburgh, PA 15261,<br />

USA<br />

Email: pkumta@pitt.edu, manivana@netl.doe.gov<br />

Amorphous silicon has been successfully electrodeposited on copper using a SiCl4 based organic<br />

electrolyte under galvanostatic conditions. <strong>The</strong> electrodeposited silicon films were characterized for their<br />

composition, morphology and structural characteristics using glancing angle x-ray diffraction (GAXRD),<br />

scanning electron microscopy (SEM), and Raman spectroscopy. GAXRD and Raman analyses clearly<br />

confirm the amorphous state of the deposited silicon film. <strong>The</strong> deposited films were tested for possible<br />

application as anodes for Li-ion battery. <strong>The</strong> results indicate that this binder less amorphous silicon anode<br />

exhibits a reversible capacity of ~1300 mAh g -1 with a columbic efficiency of > 99.5% up to 100 cycles.<br />

Impedance measurements at the end of each charge cycle show a non-variable charge transfer resistance<br />

which contributes to the excellent cyclability over 100 cycles observed for the films. This approach of<br />

developing thin amorphous silicon films directly on copper eliminates the use of binders and conducting<br />

additives, rendering the process simple, facile and easily amenable for large scale manufacturing.

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