Thermally Robust Metal Gate Electrodes with Tunable ... - Sematech
Thermally Robust Metal Gate Electrodes with Tunable ... - Sematech
Thermally Robust Metal Gate Electrodes with Tunable ... - Sematech
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Impacts of Work Function on J SDE<br />
Current Density (A/cm 2 )<br />
10 3<br />
10 1<br />
10 -1<br />
10 -3<br />
10 -5<br />
10 -7<br />
10 -9<br />
10 5 Solid Symbol: NMOS<br />
J SDE<br />
@|Vg| = 0.5V<br />
EOT=1 nm<br />
SDE Doping: 5x10 19 cm -3<br />
SiO 2<br />
SiON<br />
Open Symbol: PMOS<br />
HfO 2<br />
10 -11<br />
0.0 0.2 0.4 0.6<br />
Φ B<br />
-Ec (NMOS) or Ev-Φ B<br />
(PMOS) (V)<br />
J SDE (<strong>Gate</strong> to S/D Extension tunneling) is higher in n-FET<br />
<strong>Metal</strong> gate <strong>with</strong> mid-gap work function reduces J SDE , more so <strong>with</strong> high-K gate<br />
dielectrics<br />
J SDE reduction is important for I off in scaled devices
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