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Chip monolithic ceramic capacitors

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!Note • This !Note PDF catalog • Please is downloaded read rating and from !CAUTION the website (for of Murata storage, Manufacturing operating, rating, co., ltd. soldering, Therefore, mounting it’s specifications and handling) are in subject this catalog to change to prevent or our smoking products and/or in it may burning, be discontinued etc. without advance notice. Please check with our<br />

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• This PDF catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.<br />

C02E.pdf<br />

05.12.14<br />

Specifications and Test Methods<br />

Continued from the preceding page.<br />

No.<br />

Item<br />

Specifications<br />

Temperature Compensating Type<br />

Test Method<br />

The measured and observed characteristics should satisfy the<br />

specifications in the following table.<br />

Appearance<br />

No marking defects<br />

17<br />

Humidity<br />

Load<br />

Capacitance<br />

Change<br />

Q<br />

Within T7.5% or T0.75pF<br />

(Whichever is larger)<br />

10<br />

30pF and below : QU100W 3 C<br />

C : Nominal Capacitance (pF)<br />

Apply the rated voltage at 40T2D and 90 to 95% humidity for<br />

500T12 hours.<br />

Remove and let sit for 24T2 hours at room temperature, then<br />

measure. The charge/discharge current is less than 50mA.<br />

I.R.<br />

More than 500MΩ or 25Ω · F (Whichever is smaller)<br />

Dielectric<br />

Strength<br />

No failure<br />

The measured and observed characteristics should satisfy the<br />

specifications in the following table.<br />

Appearance<br />

No marking defects<br />

8<br />

18<br />

High<br />

Temperature<br />

Load<br />

Capacitance<br />

Change<br />

Q<br />

Within T3% or T0.3pF<br />

(Whichever is larger)<br />

10pF and over, 30pF and below : QU275W<br />

10pF and below : QU200W10C<br />

C : Nominal Capacitance (pF)<br />

5<br />

2<br />

C<br />

Apply 200% of the rated voltage for 1000T12 hours at the<br />

maximum operating temperature T3D. Let sit for 24T2 hours<br />

(temperature compensating type) at room temperature, then<br />

measure.<br />

The charge/discharge current is less than 50mA.<br />

I.R.<br />

More than 1,000MΩ or 50Ω · F (Whichever is smaller)<br />

Dielectric<br />

Strength<br />

No failure<br />

19<br />

ESR<br />

0.5pFVCV1pF : 350mΩ below<br />

1pFFCV5pF : 300mΩ below<br />

5pFFCV10pF : 250mΩ below<br />

10pFFCV20pF : 400mΩ below<br />

The ESR should be measured at room Temperature. and<br />

frequency 1T0.2GHz with the equivalent of BOONTON Model<br />

34A.<br />

The ESR should be measured at room Temperature. and<br />

frequency 500T50MHz with the equivalent of HP8753B.<br />

Table A<br />

(1)<br />

Capacitance Change from 25D Value (%)<br />

Char. Code<br />

Temp. Coeff.<br />

(ppm/D) *1<br />

Y55D<br />

Y30D<br />

Y10D<br />

Max.<br />

Min.<br />

Max.<br />

Min.<br />

Max.<br />

Min.<br />

5C 0T30 0.58 Y0.24<br />

0.40<br />

Y0.17<br />

0.25<br />

Y0.11<br />

*1 : Nominal values denote the temperature coefficient within a range of 25 to 125D.<br />

(2)<br />

Char.<br />

Nominal Values<br />

(ppm/D) *2<br />

Max.<br />

Y55D<br />

Min.<br />

2C<br />

0T60<br />

0.82<br />

Y0.45<br />

3C<br />

0T120<br />

0.37<br />

Y0.90<br />

4C<br />

0T250<br />

0.56<br />

Y0.88<br />

*2 : Nominal values denote the temperature coefficient within a range of 20 to 125D.<br />

Capacitance Change from 20D Value (%)<br />

Max.<br />

0.49<br />

0.82<br />

1.54<br />

Y25D<br />

Min.<br />

Y0.27<br />

Y0.54<br />

Y1.13<br />

Max.<br />

0.33<br />

0.55<br />

1.02<br />

Y10D<br />

Min.<br />

Y0.18<br />

Y0.36<br />

Y0.75<br />

46

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