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Effect of substrate orientation on lattice relaxation of epitaxial ...

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014104-5 D. Kan and I. Takeuchi J. Appl. Phys. 108, 014104 2010<br />

FIG. 6. Color <strong>on</strong>line a L scans <str<strong>on</strong>g>of</str<strong>on</strong>g> the 220 BiFeO 3<br />

reflecti<strong>on</strong> for the 110-oriented film with thickness up<br />

to 1 m. The scans were performed al<strong>on</strong>g the 001<br />

SrTiO 3 directi<strong>on</strong>. b Evoluti<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> the distorti<strong>on</strong> green<br />

circle, tilting blue square and rotati<strong>on</strong> angle red triangle<br />

for the domain structure in 110 film with thickness.<br />

c Schematics describing the evoluti<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> the tilting<br />

<str<strong>on</strong>g>of</str<strong>on</strong>g> domain structures in 110 films as a functi<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g><br />

thickness.<br />

the distorti<strong>on</strong> angle determined using the m<strong>on</strong>oclinic cell<br />

are plotted in Figs. 5b and 5c, respectively. Due to the<br />

anisotropic strain from the 110 <str<strong>on</strong>g>substrate</str<strong>on</strong>g>, the <strong>lattice</strong> c<strong>on</strong>stants<br />

al<strong>on</strong>g the 001 c m and 11¯0 b m STO directi<strong>on</strong><br />

show different behaviors. In the thickness less than 100 nm,<br />

c m is locked to the same <strong>lattice</strong> c<strong>on</strong>stant as the <str<strong>on</strong>g>substrate</str<strong>on</strong>g>,<br />

while b m has the larger value than the <strong>on</strong>e for the <str<strong>on</strong>g>substrate</str<strong>on</strong>g>.<br />

This reveals that the negligible strain al<strong>on</strong>g the 11¯0 STO directi<strong>on</strong><br />

and the c<strong>on</strong>tracti<strong>on</strong> in c m result in the expansi<strong>on</strong> in<br />

b m . As the thickness is increased up to 200 nm, the relaxati<strong>on</strong><br />

takes place exhibiting the distinct change in the <strong>lattice</strong> c<strong>on</strong>stants<br />

and . Bey<strong>on</strong>d this thickness, b m and remain c<strong>on</strong>stant<br />

while c m shows gradual increase with thickness. This<br />

behavior indicates that, for the 110-oriented film, the stored<br />

elastic energy is relieved through the change in not <strong>on</strong>ly the<br />

<strong>lattice</strong> c<strong>on</strong>stants but also the distorti<strong>on</strong> angle. The uniaxial<br />

strain al<strong>on</strong>g the 001 directi<strong>on</strong> allows the relaxati<strong>on</strong> in the<br />

angle while the biaxial strain for the 001-oriented BFO thin<br />

film keeps the <strong>lattice</strong> c<strong>on</strong>stant fixed, suppressing the angle<br />

relaxati<strong>on</strong> process which is <strong>on</strong>ly seen in the larger thickness<br />

regi<strong>on</strong>. Combining our experimental results in Figs. 2, 3, and<br />

5, we can c<strong>on</strong>clude that compressive strain from <str<strong>on</strong>g>substrate</str<strong>on</strong>g> is<br />

mainly applied al<strong>on</strong>g the 100 axis and that the distorti<strong>on</strong><br />

angle is predominantly relaxed in the <str<strong>on</strong>g>orientati<strong>on</strong></str<strong>on</strong>g> where the<br />

compressive strain al<strong>on</strong>g the 100 axis is not involved. This<br />

is also c<strong>on</strong>firmed by the fact that the thickness where the<br />

<strong>lattice</strong> c<strong>on</strong>stants begin to be fully relaxed become smaller as<br />

the number <str<strong>on</strong>g>of</str<strong>on</strong>g> the 100 axes <strong>on</strong> the <str<strong>on</strong>g>substrate</str<strong>on</strong>g> surface is decreased.<br />

In Fig. 5d, the tetrag<strong>on</strong>ality 2c m / 2 am +b 2 m and the<br />

saturated polarizati<strong>on</strong> value at room temperature are plotted<br />

against the thickness. Due to the uniaxial strain, the tetrag<strong>on</strong>ality<br />

becomes lower than 1, from which the slight decrease<br />

in the polarizati<strong>on</strong> is expected. The observed polarizati<strong>on</strong>,<br />

however, is 90 C/cm 2 which is c<strong>on</strong>sistent with the value<br />

estimated with the projecti<strong>on</strong> rule, 105/3/ 2 C/cm 2 .<br />

This indicates again that strain relaxati<strong>on</strong> has little impact <strong>on</strong><br />

the polarizati<strong>on</strong> value bey<strong>on</strong>d 400 nm.<br />

Another interesting behavior is the tilting <str<strong>on</strong>g>of</str<strong>on</strong>g> the 110<br />

plane associated with the <strong>lattice</strong> relaxati<strong>on</strong>. Figure 6a<br />

shows a L scan at the 220 BFO peak al<strong>on</strong>g the 001 directi<strong>on</strong>.<br />

When the <strong>lattice</strong> relaxati<strong>on</strong> takes place in the film, the<br />

peak begins to split into two peaks 200 nm-thick sample,<br />

indicating that the relaxati<strong>on</strong> induces the tilting <str<strong>on</strong>g>of</str<strong>on</strong>g> the 110<br />

plane <str<strong>on</strong>g>of</str<strong>on</strong>g> the surface. Note that this tilting is essentially the<br />

same as the <strong>on</strong>e observed for the 001 film, revealing that<br />

the tilting in c<strong>on</strong>necti<strong>on</strong> with the strain relaxati<strong>on</strong> is an intrinsic<br />

characteristic <str<strong>on</strong>g>of</str<strong>on</strong>g> the <strong>epitaxial</strong>ly-stabilized m<strong>on</strong>oclinic<br />

phase in BFO. The key observati<strong>on</strong> for the 110 film is that<br />

the tilt angle varies with thickness and that <strong>on</strong>e <str<strong>on</strong>g>of</str<strong>on</strong>g> the tilted<br />

surfaces <str<strong>on</strong>g>of</str<strong>on</strong>g> the two domain structures becomes parallel to the<br />

<str<strong>on</strong>g>substrate</str<strong>on</strong>g> surface. The domain structure with the surface parallel<br />

to the <str<strong>on</strong>g>substrate</str<strong>on</strong>g> eventually becomes the dominant <strong>on</strong>e<br />

with increasing thickness. This behavior is summarized in<br />

Figs. 6b and 6c. When the <strong>lattice</strong> relaxati<strong>on</strong> occurs, the<br />

domains tilt in opposite directi<strong>on</strong>s with the angle in blue as<br />

shown in Fig. 6c. Judging from the intensity <str<strong>on</strong>g>of</str<strong>on</strong>g> the BFO<br />

220 x-ray reflecti<strong>on</strong>s Fig. 6a, the populati<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> the domain<br />

structures tilted in the opposite directi<strong>on</strong>s are equally<br />

distributed. As the thickness is increased further, both <str<strong>on</strong>g>of</str<strong>on</strong>g> the<br />

domains are rotated in the same directi<strong>on</strong> the angle in red in<br />

the Figs. 6b and 6c. This results in <strong>on</strong>e <str<strong>on</strong>g>of</str<strong>on</strong>g> the 110<br />

surfaces <str<strong>on</strong>g>of</str<strong>on</strong>g> the domain structures becoming parallel to the<br />

<str<strong>on</strong>g>substrate</str<strong>on</strong>g> surface. It should be noted that the domain with the<br />

surface parallel to the <str<strong>on</strong>g>substrate</str<strong>on</strong>g> surface shows the prominent<br />

x-ray diffracti<strong>on</strong> peak, indicating that this is the major domain.<br />

The populati<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> the other domain structure decreases<br />

with increasing thickness. This observati<strong>on</strong> implies that the<br />

100 twin boundary where the domain with the distorti<strong>on</strong> in<br />

Author complimentary copy. Redistributi<strong>on</strong> subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp

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