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Development of Diamond Field-Emitter Arrays for Free-Electron Lasers

Development of Diamond Field-Emitter Arrays for Free-Electron Lasers

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Jonathan D. Jarvis, Heather L. Andrews, Charles A. Brau, Chris L. Stewart<br />

Department <strong>of</strong> Physics and Astronomy, Vanderbilt University<br />

Bo Kyoung Choi, Jimmy Davidson, Weng Kang, Supil Raina, Yong Mui Wong<br />

Department <strong>of</strong> Electrical and Computer Engineering, Vanderbilt University


FEAs are micr<strong>of</strong>abricated arrays <strong>of</strong> field emitters:<br />

• Can be made with and without gate<br />

electrodes<br />

• Additional self-aligned electrodes may be<br />

included <strong>for</strong> beam collimation to minimize<br />

emittance<br />

• Many varieties, including Spindt type, CNT,<br />

<strong>Diamond</strong> (DFEA) etc..<br />

ungated DFEA<br />

w/ collimation<br />

x-p x phase space<br />

Gated DFEA


DFEAs have several advantages over photocathodes:<br />

• Rugged<br />

• Tolerate poor vacuum operation, 10 -5 Torr, transport in air<br />

• Can be conditioned <strong>for</strong> highly uni<strong>for</strong>m emission<br />

• Degrade gracefully (ungated)<br />

• No drive laser required<br />

• Compatible with NCRF/SRF technology<br />

– No heat generated<br />

– No laser window required


Two main RF gun integration strategies <strong>for</strong> DFEAs:<br />

• Gated FEAs can be driven by a low-voltage<br />

harmonic feed<br />

• For ungated FEAs, emission at a desirable<br />

RF phase may be accomplished by 3 rd<br />

harmonic mixing or cathode extension into the<br />

cavity<br />

Emission Time Gating


DFEAs are fabricated by a mold-transfer technique:<br />

• MPCVD diamond grown in an oxide sharpened Si mold<br />

• Brazed to a Mo substrate<br />

• Tip radii <strong>of</strong> < 10nm<br />

Thermal oxidation <strong>of</strong> Si<br />

Oxide patterning<br />

Anisotropic etching<br />

Tip mold sharpening oxidation<br />

MPCVD diamond deposition<br />

Metal deposition Ni/Ti<br />

High temperature diamond brazing<br />

Si mold & oxide removal<br />

TiCuSil<br />

Mo


DFEAs can be conditioned <strong>for</strong> highly-uni<strong>for</strong>m<br />

emission:<br />

Investigated several conditioning methods:<br />

1. Selective gas exposure<br />

• no improvement thus far<br />

2. Vacuum Thermal Electric Conditioning (VTEC)<br />

• High field annealing <strong>of</strong> tightly adsorbed species<br />

• Greatly improved temporal stability<br />

3. Sustained moderate/high current operation<br />

• Morphology changes by thermal-assisted field evaporation<br />

CVD diamond cathode<br />

Quartz capillary<br />

Glass/Y 2 O 3 :Eu/Ni (5nm)<br />

+ HV<br />

A<br />

Mo substrate


High current conditioning most successful thus far:<br />

• Evaporation <strong>of</strong> nanotips is self limiting, leading to highly uni<strong>for</strong>m<br />

emission.<br />

• Similar to pulsed conditioning <strong>of</strong> Spindt cathodes.<br />

• During conditioning studies, microtips achieved per-tip currents exceeding<br />

15µA. Scales to 100A/cm 2 DC <strong>for</strong> highest densities<br />

• Studies limited by anode destruction<br />

(a) (b) (c) (d) (e)<br />

(a) (b) (c) (d) (e)<br />

unconditioned<br />

After 0.5hr<br />

at ~20nA/tip<br />

After 0.5hr<br />

at ~100nA/tip<br />

After 0.5hr at<br />

~500nA/tip<br />

After 1hr at<br />

~ 1.5µΑ/tip<br />

~200°C VTEC


Preliminary emittance measurements per<strong>for</strong>med:<br />

• Measurement made with a<br />

pepperpot technique<br />

• 3x24 DFEA, 28µm pitch<br />

• Estimated rms divergence <strong>of</strong><br />

~38mrad<br />

• Value will be refined using higher<br />

density arrays<br />

• For 2kV beam and a 1mm cathode,<br />

normalized x-emittance is:<br />

+ HV<br />

A<br />

Collector:<br />

ZnO/Y 2 O 3 :Eu<br />

Metal spacer<br />

Pepperpot anode<br />

Quartz capillary<br />

Mo substrate<br />

CVD diamond cathode


Measured emittance agrees well with simulations:<br />

• <strong>Field</strong> solving in POISSON, trajectory<br />

calculations in GPT<br />

• <strong>Emitter</strong> is conical rather than pyramidal<br />

• rms angular divergence at the pepperpot<br />

position is ~40mrad


High-resolution energy analyzer has been built <strong>for</strong><br />

measuring DFEA energy spread:<br />

• Based on UMER design [1]<br />

• Focusing electrode improves resolution by several orders <strong>of</strong> magnitude<br />

• Integrated into DC teststand capable <strong>of</strong> anode-cathode planarity and gap<br />

adjustment at high voltage<br />

A<br />

Collector: ZnO/Y 2 O 3 :Eu<br />

A<br />

Retarding mesh<br />

V bias<br />

Focusing electrode<br />

V focus<br />

Front aperture plate<br />

V beam<br />

Mo substrate<br />

CVD diamond cathode


Estimated resolution is better than kinetic-energy<br />

error in simulations:<br />

• Modeled in SIMION<br />

• Resolution better than KE error <strong>of</strong> 10ppm<br />

• Optimum focusing strength found to be:<br />

FWHM vs. focusing<br />

Collected fraction<br />

vs. bias


Preliminary spectra taken with a 3x24 DFEA:<br />

• Beamlets from multiple adsorbates on a single<br />

tip within analyzer’s angular acceptance<br />

• Adsorbate fluctuations likely change the energy<br />

spectrum and can not be normalized out<br />

• FWHM <strong>of</strong> averaged spectra is ~1.3eV, much<br />

larger than ~0.3eV <strong>for</strong> a metallic emitter<br />

• UHV experiments with optimized cathode<br />

geometries will yield clean diamond spectra


Conclusions:<br />

• DFEAs are very rugged and operate well in extreme environments<br />

• Self-limiting conditioning procedures have been developed that achieve highly<br />

uni<strong>for</strong>m emission.<br />

• Currents in excess <strong>of</strong> 15µA/tip DC have been observed, which scales to<br />

~100A/cm 2 <strong>for</strong> achievable tip densities (4µm pitch)<br />

• Much higher current densities (1kA/cm 2 ) will be possible <strong>for</strong> pulsed RF<br />

operation<br />

• Emittance measurements agree with simulated values, 1.4µm <strong>for</strong> a 1mm<br />

cathode<br />

• Preliminary measurements <strong>of</strong> averaged energy spread (1.3eV) are much higher<br />

than those <strong>of</strong> metallic field emitters (0.3eV)<br />

• All presented results will be refined in the coming months

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