BYV72EW series

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1 3
k 2
V R = 150 V/ 200 V
V F ≤ 0.85 V
I O(AV) = 30 A
I RRM = 0.2 A
t rr ≤ 28 ns
GENERAL DESCRIPTION PINNING SOT429 (TO247)
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
PIN DESCRIPTION
rectifiers in high frequency switched 1 anode 1
mode power supplies.
2 cathode
The BYV72EW series is supplied in
the conventional leaded SOT429
(TO247) package.
3 anode 2
tab cathode
1
2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV72EW -150 -200
V RRM Peak repetitive reverse voltage - 150 200 V
V RWM Crest working reverse voltage - 150 200 V
V R Continuous reverse voltage T mb ≤ 144˚C - 150 200 V
I O(AV) Average rectified output current square wave - 30 A
I FRM
(both diodes conducting)
Repetitive peak forward current
δ = 0.5; T mb ≤ 104 ˚C
t = 25 µs; δ = 0.5; - 30 A
I FSM
per diode
Non-repetitive peak forward
T mb ≤ 104 ˚C
t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
I RRM Repetitive peak reverse current
RWM(max)
t p = 2 µs; δ = 0.001
sinusoidal; with reapplied
V
- 0.2 A
per diode
I RSM Non-repetitive peak reverse t p = 100 µs - 0.2 A
current per diode
T stg
T j
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
1 Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V C Electrostatic discharge Human body model; - 8 kV
capacitor voltage
C = 250 pF; R = 1.5 kΩ
October 1998 1 Rev 1.200

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R th j-mb Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes conducting - - 1.4 K/W
R th j-a Thermal resistance junction to in free air - 45 - K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V F Forward voltage I F = 15 A; T j = 150˚C - 0.83 0.90 V
I F = 15 A - 0.95 1.05 V
I F = 30 A - 1.00 1.20 V
I R Reverse current V R = V RWM ; T j = 100 ˚C - 0.5 1 mA
V R = V RWM - 10 100 µA
Q s Reverse recovery charge I F = 2 A; V R ≥ 30 V; -dI F /dt = 20 A/µs - 6 15 nC
t rr1 Reverse recovery time I F = 1 A; V R ≥ 30 V; - 20 28 ns
-dI F /dt = 100 A/µs
t rr2 Reverse recovery time I F = 0.5 A to I R = 1 A; I rec = 0.25 A - 13 22 ns
V fr Forward recovery voltage I F = 1 A; dI F /dt = 10 A/µs - 1 - V
October 1998 2 Rev 1.200

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
I F
I
rrm
t rr
I = 1A
dI
F
dt
0.5A
IF
0A
time
I
rec
= 0.25A
Q 100%
s 10%
IR
trr2
I
R
R
Fig.1. Definition of t rr1 , Q s and I rrm
Fig.4. Definition of t rr2
time
10
V F
V fr
5
Fig.2. Definition of V fr
V F
time
I F
0 5 10 15 20 25
PF / W
20
Vo = 0.705 V
Rs = 0.0097 Ohms
BYV42
Tmb(max) / C
102
D = 1.0
15
0.5
114
0.1
0.2
126
I
tp
tp
D =
T
138
0
IF(AV) / A
Fig.5. Maximum forward dissipation P F = f(I F(AV) ) per
diode; square current waveform where
I F(AV) =I F(RMS) x √D.
T
t
150
Voltage Pulse Source
R
D.U.T.
PF / W
15
10
Vo = 0.705 V
Rs = 0.0097 Ohms
4
BYV42
2.8
2.2
Tmb(max) / C
114
a = 1.57
1.9
126
Current
shunt
to ’scope
5
138
Fig.3. Circuit schematic for t rr2
0
150
0 5 10 15
IF(AV) / A
Fig.6. Maximum forward dissipation P F = f(I F(AV) ) per
diode; sinusoidal current waveform where a = form
factor = I F(RMS) / I F(AV) .
October 1998 3 Rev 1.200

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
1000
trr / ns
100
Qs / nC
100
IF=20A
IF=20A
10A
5A
2A
1A
IF=1A
10
10
1
1 10 100
dIF/dt (A/us)
Fig.7. Maximum t rr at T j = 25 ˚C; per diode
1.0
1.0 10 100
-dIF/dt (A/us)
Fig.10. Maximum Q s at T j = 25 ˚C; per diode
10
Irrm / A
Transient thermal impedance, Zth j-mb (K/W)
10
IF=20A
1
1
IF=1A
0.1
0.1
0.01
P
D
tp
D =
T
tp
0.01
1 10 100
-dIF/dt (A/us)
Fig.8. Maximum I rrm at T j = 25 ˚C; per diode
T
t
0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s) BYV42E
Fig.11. Transient thermal impedance; per diode;
Z th j-mb = f(t p ).
50
40
IF / A
Tj = 150 C
Tj = 25 C
30
20
typ
10
0
0
max
0.5 1.0
1.5
VF / V
Fig.9. Typical and maximum forward characteristic
I F = f(V F ); parameter T j
October 1998 4 Rev 1.200

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
16 max
5.3
7.3
1.8
5.3 max
o
3.5
max
3.5
21
max
15.5
max
seating
plane
2.5
15.5
min
4.0
max
1
2 3
2.2 max
3.2 max
1.1
0.4
M
0.9 max
5.45
5.45
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
Fig.12. SOT429 (TO247); pin 2 connected to mounting base.
October 1998 5 Rev 1.200

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998 6 Rev 1.200