THE CANON Eos-1ds MARK III CAMERA: EOS REBORN
THE CANON Eos-1ds MARK III CAMERA: EOS REBORN
THE CANON Eos-1ds MARK III CAMERA: EOS REBORN
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New 21.1 Megapixel, Full<br />
Frame CMOS Sensor<br />
IV. DISCUSSION OF NEW AND<br />
IMPROVED FEATURES<br />
The 35mm full-frame CMOS sensor of the <strong>EOS</strong>-1Ds Mark <strong>III</strong> has been developed and<br />
manufactured by Canon. Its 6.4µm pixels take advantage of a host of Canon R&D<br />
advances to achieve its speed, resolution and image quality. The following features<br />
make the <strong>EOS</strong>-1Ds Mark <strong>III</strong> the highest performing digital AF SLR camera:<br />
• 35mm full-frame digital AF SLR with the world’s<br />
highest resolution, approximately 21.1<br />
megapixels*<br />
• Wide ISO speed range (ISO 100- 1600, L: 50,<br />
H: 3200)<br />
• Low noise (same level as <strong>EOS</strong>-1Ds Mark II)<br />
• High-speed signal reading (approximately 5 fps)<br />
• Low power consumption<br />
• Live View Function<br />
*For 24x36mm format as of August 20, 2007.<br />
36mm<br />
Although the pixel size is about the same as that of the <strong>EOS</strong> 30D, the ISO speed range is<br />
the same as that of the <strong>EOS</strong>-1Ds Mark II.<br />
Pixel size [µm square]<br />
<strong>EOS</strong>-1Ds Mark <strong>III</strong> 6.4 50 L<br />
<strong>EOS</strong> 5D<br />
8.2<br />
50 L<br />
ISO speed range<br />
100 - 1600 H 3200<br />
<strong>EOS</strong>-1Ds Mark II 7.2 50 L<br />
100 - 1600 H 3200<br />
100 - 1600 H 3200<br />
By optimizing the gap between the on-chip microlenses, reducing the height from the<br />
photodiode to the microlens, and improving the fill factor (photo diode area divided by<br />
pixel size) by applying the micro-rule that improves the performance of the exposure<br />
device, light-gathering efficiency has been improved.<br />
Opening Ratio (Conceptual Diagram) Microlens Comparison (Conceptual Diagram)<br />
<strong>EOS</strong>-1Ds Mark <strong>III</strong><br />
(6.4 x 6.4 µm)<br />
Photo diode area<br />
Pixel Size<br />
<strong>EOS</strong>-1Ds Mark II<br />
(7.2 x 7.2 µm)<br />
Pixel Size<br />
<strong>EOS</strong>-1Ds Mark <strong>III</strong> (6.4 x 6.4 µm)<br />
Gap between microlenses<br />
CMOS Sensor (Actual Size)<br />
Photo diode area Pixel pitch Photo diode<br />
<strong>EOS</strong>-1Ds Mark II (7.2 x 7.2 µm)<br />
IV. DISCUSSION OF NEW AND IMPROVED FEATURES 11<br />
24mm