By Whitney Zack and Wade Campney

ePAPER READ

DOWNLOAD ePAPER

meseec.ce.rit.edu

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

START NOW

MRAM: Spin Transfer Torque

• This method uses spin‐aligned electrons to

directly torque the domains.

• Lower amount of current required to write to

the cells.

• Allows for even smaller cell sizes(~65nm),

which allows for a higher density.

RIT Computer Engineering Cluster SSH Clients

EECC 756 - Spring 2001 Homework Assignment #2, Due May 10

Evolution of the NVIDIA GPU Architecture

MRAM: Spin Transfer Torque • This method uses spin‐aligned electrons to directly torque the domains. • Lower amount of current required to write to the cells. • Allows for even smaller cell sizes(~65nm), which allows for a higher density.

MRAM Spin Transfer(PIC)

Page 1 and 2: By Whitney Zack and Wade Campney
Page 3 and 4: RAM
Page 5 and 6: Non‐Volatile • Is computer memo
Page 7 and 8: MRAM Drawbacks • Requires a lot o
Page 9: MRAM: Toggle Mode(PIC)
Page 13 and 14: SRAM(Static RAM) drawbacks • 4‐
Page 15 and 16: HMC - In Development • Intel/Micr
Page 17 and 18: Design
Page 19 and 20: DRAM 512 MB Memory Stick
Page 21 and 22: 1 TB/s HMC DRAM Prototype
Page 23 and 24: Power Performance
Page 25: Questions, Comments, etc… • Tha

By Whitney Zack and Wade Campney

Create successful ePaper yourself

Delete template?

Save as template?