FLL120MK DATASHT(color) - Modelithics, Inc.

FEATURES
• High Output Power: P 1dB = 40.0dBm (Typ.)
• High Gain: G 1dB = 10.0dB (Typ.)
• High PAE: η add = 40% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
FLL120MK
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL120MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally
suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V DS ) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with
gate resistance of 50Ω.
3. The operating channel temperature (T ch ) should not exceed 145°C.
15
-5
37.5
-65 to +175
175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Symbol
IDSS
gm
Vp
VGSO
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2400mA
VDS = 5V, IDS =240mA
IGS = -240µA
Min.
-
-
-1.0
-5
Limit
Typ.
4000
2000
-2.0
-
Max.
6000
-
-3.5
-
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS = 0.55 IDSS (Typ.),
f = 2.3GHz
39.5 40.0 -
9.0 10.0 -
dBm
dB
Power-added Efficiency
ηadd
- 40 -
%
Thermal Resistance Rth Channel to Case
- 3.3 4.0 °C/W
CASE STYLE: MK
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1

FLL120MK
L-Band Medium & High Power GaAs FET
50
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Total Power Dissipation (W)
40
30
20
10
Drain Current (mA)
4000
3000
2000
1000
VGS =0V
-0.5V
-1.0V
-1.5V
0 50 100 150 200 0 2 4 6 8 10
Case Temperature (°C)
Drain-Source Voltage (V)
-2.0V
OUTPUT POWER vs. INPUT POWER
42
VDS=10V
IDS ≈ 0.55 IDSS
f = 2.3 GHz
Output Power (dBm)
40
38
36
34
32
P out
η add
60
40
20
ηadd (%)
30
20 22 24 26 28 30 32
0
Input Power (dBm)
2

FLL120MK
L-Band Medium & High Power GaAs FET
+j10
0
+j50
+j25
4.5
4.0
5.0 GHz
3.5 4.5
4.0
3.0 3.5
2.5 3.0
2.0 2.0
0.5GHz10 25 50Ω
1.0
0.5GHz
5.0 GHz
100
+j100
250
+j250
S 11
S 22
180°
+90°
0.5 GHz
1.5
3.0
4 3 2 1
SCALE FOR |S 21 |
5.0 GHz
1
4.5
4.0
4.5
4.0
2.0 5.0 GHz
0.5GHz
S 21
S 12
0°
-j10
-j25
-j50
-j100
-j250
SCALE FOR |S 12 |
-90°
0.1
0.2
S-PARAMETERS
V DS = 10V, I DS = 2200mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
500 .959 -168.4 3.136 95.8 .008 31.0 .824 179.4
1000 .953 -176.0 1.617 94.1 .010 45.7 .813 178.8
1500 .953 -179.6 1.170 93.8 .011 64.3 .810 177.7
2000 .951 177.0 .978 92.3 .014 82.4 .792 176.5
2500 .939 172.6 .927 91.4 .021 89.1 .778 174.0
3000 .914 165.1 .936 88.0 .024 93.2 .739 168.3
3500 .885 152.7 .990 80.6 .033 94.6 .695 158.9
4000 .836 134.0 1.106 67.1 .051 88.1 .633 145.1
4500 .766 107.3 1.239 48.2 .067 77.3 .559 128.0
5000 .690 71.6 1.415 23.9 .103 60.5 .477 107.3
3

FLL120MK
L-Band Medium & High Power GaAs FET
Case Style "MK"
Metal-Ceramic Hermetic Package
2-R 1.25
(0.049)
1
2
2.5 Min.
(0.098)
0.1
(0.004)
1.0±0.1
(0.039)
2.5 Min.
(0.098)
1.78
(0.073)
14.3±0.2
(0.563)
4.5 Max.
(0.177)
6.3±0.2
(0.25)
4.8
(0.188)
3
17.5±0.2
(0.689)
2.28±0.2
(0.089)
8.9
(0.349)
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4