SKM 150 GB 063 D - Fusibles y Semiconductores Profesionales

Absolute Maximum Ratings
Symbol Conditions 1)
V CES
V CGR
I C
I CM
V GES
P tot
T j , T stg
V isol
humidity
climate
R GE = 20 kΩ
T case = 25/70 °C
T case = 25/70 °C; t p = 1 ms
per IGBT, T case = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
Inverse Diode
I F = –I C T case = 25/80 °C
I FM = –I CM T case = 25/80 °C; t p = 1 ms
I FSM t p = 10 ms; sin.; T j = 150 °C
I 2 t t p = 10 ms; T j = 150 °C
Values
600
600
200 / 150
400 / 300
± 20
675
–40 ... +150 (125)
2500
Class F
40/125/56
130 / 90
400 / 300
880
3800
Units
V
V
A
A
V
W
°C
V
A
A
A
A 2 s
SEMITRANS ® M
Superfast NPT-IGBT
Modules
SKM 150 GB 063 D
SEMITRANS 3
Characteristics
Symbol Conditions 1) min. typ. max. Units
V (BR)CES
V GE(th)
I CES
I GES
V CEsat
V CEsat
g fs
C CHC
C ies
C oes
C res
L CE
t d(on)
t r
t d(off)
t f
E on
E off
V GE = 0, I C = 4 mA
V GE = V CE , I C = 1 mA
V GE = 0 T j = 25 °C
V CE = V CES T j = 125 °C
V GE = 20 V, V CE = 0
I C = 100 A V GE = 15 V;
I C = 150 A T j = 25 (125) °C
V CE = 20 V, I C = 150 A
per IGBT
V GE = 0
V CE = 25 V
f = 1 MHz
V CC = 300 V
V GE = –15 V / +15 V 3)
I C = 150 A, ind. load
R Gon = R Goff = 10 Ω
T j = 125 °C
≥ V CES
4,5
–
–
–
–
–
50
A V = 0 V;
–
Inverse Diode 8)
V F = V EC I F = 100
Q rr I F = 150 A; T j = 125 °C 2) –
I F = 150 A
GE
T j = 25 (125) °C
–
V TO
r t
I RRM
T j = 125 °C
T j = 125 °C
I F = 150 A; T j = 125 °C 2)
–
–
–
Thermal characteristics
R thjc
R thjc
R thch
per IGBT
per diode
per module
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5,5
0,2
5
–
1,8(2,0)
2,1(2,4)
–
–
8400
1000
600
–
130
65
450
40
8,5
5,5
1,45(1,35)
1,55(1,55)
–
6
53
8,1
–
–
–
–
6,5
4
–
200
–
2,5(2,8)
–
700
–
–
–
20
–
–
–
–
–
–
1,7
1,9
0,9
8
–
–
0,18
0,5
0,038
V
V
mA
mA
nA
V
V
S
pF
pF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
GB
Features
• N channel, homogeneous Silicon
structure (NPT- Non punchthrough
IGBT)
• Low tail current with low
temperature dependence
• High short circuit capability, self
limiting if term. G is clamped to E
• Pos. temp.-coeff. of V CEsat
• 50 % less turn off losses 9)
• 30 % less short circuit current 9)
9)
• Very low C ies , C oes , C res
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (13 mm) and
creepage distances (20 mm)
Typical Applications
• Switching (not for linear use)
• Switched mode power supplies
• UPS
• AC inverter servo drives
• Pulse frequencies also above
10 kHz
• Welding inverters
1) T case = 25 °C, unless otherwise
specified
2) I F = – I C , V R = 300 V,
–di F /dt = 1500 A/µs, V GE = 0 V
3) Use V GEoff = –5... –15 V
8) CAL = Controlled Axial Lifetime
Technology
9) Compared to PT-IGBT
Cases and mech. data → B 6 – 38
© by SEMIKRON 0898 B 6 – 33

SKM 150 GB 063 D
700
W
600
500
M150GB 06.XLS-1
35
mWs
30
25
M150GB06.XLS-2
T j = 125 °C
V CE = 300 V
V GE = ± 15 V
R G = 10 Ω
400
20
E on
300
15
200
10
100
P tot
0
0 20 40 60 80 100 120 140 160
T C
E
5
0
E off
0 50 100 150 200 250 300 350
I C
A
Fig. 1 Rated power dissipation P tot = f (T C ) Fig. 2 Turn-on /-off energy = f (I C )
mWs
E
30
25
20
15
10
5
0
M150GB06.XLS-3
E on
E off
0 10 20 30 40 50 60 70
R G
Ω
T j = 125 °C
V CE = 300 V
V GE = ± 15 V
I C = 150 A
1000
100
I C
A
10
1
M150GB06.XLS-4
t p =10µs
100µs
1ms
10ms
1 V 10 100 1000 V 10000
CE
1 pulse
T C = 25 °C
T j ≤ 150 °C
Not for
linear use
Fig. 3 Turn-on /-off energy = f (R G ) Fig. 4 Maximum safe operating area (SOA) I C = f (V CE )
2,5
2
1,5
M150GB06.XLS-5
T j ≤ 150 °C
V GE = ± 15 V
R Goff = 10 Ω
I C = 150 A
12
10
8
di/dt= 500 A/µs
1400 A/µs
2500 A/µs
M150GB06.XLS-6
T j ≤ 150 °C
V GE = ± 15 V
t sc ≤ 10 µs
L < 50 nH
I C = 150 A
6
1
4
allowed numbers of
short circuits: 1s
0
0 100 200 300 400 500 600 700
V CE
V
0
0 100 200 300 400 500 600 700
V CE
V
Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit I C = f (V CE )
B 6 – 34
0898
© by SEMIKRON

I C
A
240
200
160
120
80
40
0
M150GB06.XLS-8
0 20 40 60 80 100 120 140 160
T C °C
Fig. 8 Rated current vs. temperature I C = f (T C )
T j = 150 °C
V GE ≥ 15V
300
M150GB06.XLS-9
300
M150GB06.XLS-10
A
250
200
150
17V
15V
13V
11V
9V
7V
A
250
200
150
17V
15V
13V
11V
9V
7V
100
100
50
50
I C
0
0 1 2 3 4 5
V CE
V
I C
0
0 1 2 3 4 5
V CE
V
Fig. 9 Typ. output characteristic, t p = 250 µs; T j = 25 °C Fig. 10 Typ. output characteristic, t p = 250 µs; T j = 125 °C
P cond(t) = V CEsat(t ) · I C(t)
V CEsat(t) = V CE(TO)(Tj) + r CE(Tj) · I C(t)
V CE(TO)(Tj) ≤ 1,2 – 0,001 (T j –25) [V]
300
A
250
200
150
M150GB06.XLS-12
typ.: r CE(Tj) = 0,006 + 0,000027 (T j –25) [Ω]
max.: r CE(Tj) = 0,0087 + 0,000027 (T j –25) [Ω]
100
50
valid for V GE = + 15
+2
–1
[V]; I C ≥ 0,3 I Cn
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
I C
0
0 2 4 6 8 10 12 14
V GE
V
Fig. 12 Typ. transfer characteristic, t p = 250 µs; V CE = 20 V
© by SEMIKRON 0898
B 6 – 35

SKM 150 GB 063 D
M150GB06.XLS-13
M150GB06.XLS-14
20
100
V
I Cpuls = 150 A
V GE = 0 V
18
nF
f = 1 MHz
16
100V
14
300V
10
C ies
12
10
8
C oes
1
6
4
C res
2
C
V GE
0
0,1
0 Q 100 200 300 400 500
Gate
nC
0 V 10 20 30
CE
V
Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.V CE
1000
ns
M150GB06.XLS-15
t doff
t don
T j = 125 °C
V CE = 300 V
V GE = ± 15 V
R Gon = 10 Ω
R Goff = 10 Ω
induct. load
10000
ns
1000
M150GB06.XLS-16
t doff
T j = 125 °C
V CE = 300 V
V GE = ± 15 V
I C = 150 A
induct. load
100
t r
t don
t r
t f
100
t f
t
t
10
0 50 100 150 200 250 300 350
I C
A
Fig. 15 Typ. switching times vs. I C
10
0 10 20 30 40 50 60 70
R G
Ω
Fig. 16 Typ. switching times vs. gate resistor R G
160
A
120
80
40
T j =125°C, typ.
T j =25°C, typ.
T j =125°C, max.
T j =25°C, max.
M150GB06.XLS-17
1,6
mJ
1,4
1,2
1
0,8
0,6
0,4
M150GB06.XLS-18
R G = 5 Ω
8 Ω
12 Ω
25 Ω
60 Ω
V R = 300 V
T j = 125 °C
V GE = ± 15 V
I F
0
0 0,4 0,8 1,2 1,6 2
V F
V
Fig. 17 Typ. CAL diode forward characteristic
0,2
E offD
0
0 20 40 60 80 100 120 140 160 180
I F
A
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 – 36
0898
© by SEMIKRON

1
M150GB06.XLS-19
1
M150GB06.XLS-20
K/W
K/W
0,1
0,1
0,01
0,001
Z thJC
single pulse
D=0,50
0,20
0,10
0,05
0,02
0,01
0,01
0,001
Z thJC
single pulse
D=0,5
0,2
0,1
0,05
0,02
0,01
0,0001
0,00001 0,0001 0,001 0,01 0,1 1
t p
s
Fig. 19 Transient thermal impedance of IGBT
Z thJC = f (t p ); D = t p / t c = t p · f
0,0001
0,00001 0,0001 0,001 0,01 0,1 1
t p
s
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z thJC = f (t p ); D = t p / t c = t p · f
120
A
100
80
M150GB06.XLS-22
R G =
5 Ω
8 Ω
12 Ω
V R = 300 V
T j = 125 °C
V GE = ± 15 V
120
A
100
80
12 Ω
8 Ω
R G = 5 Ω
M150GB06.XLS-23
V R = 300 V
T j = 125 °C
V GE = ± 15 V
I F = 100 A
60
40
25 Ω
60 Ω
60
40
60 Ω
25 Ω
20
20
I RR
0
0 20 40 60 80 100 120 140 160 180
I F
A
Fig. 22 Typ. CAL diode peak reverse recovery
current I RR = f (I F ; R G )
I RR
0
0 1000 2000 3000 4000 5000
di F /dt
A/µs
Fig. 23 Typ. CAL diode peak reverse recovery
current I RR = f (di/dt)
12
µC
10
8
60 Ω
25 Ω 12 Ω
M150GB06.XLS-24
8 Ω R G= 5 Ω
I F = 150 A
100 A
V R = 300 V
T j = 125 °C
V GE = ± 15 V
6
75 A
50 A
4
25 A
2
Q rr
0
0 1000 2000 3000 4000 5000
di F /dt
A/µs
© by SEMIKRON 0898
B 6 – 37

SKM 150 GB 063 D
SEMITRANS 3
Case D 56
UL Recognized
File no. E 63 532
Dimensions in mm
Case outline and circuit diagram
Mechanical Data
Symbol Conditions Values Units
min. typ. max.
M 1
M 2
a
w
to heatsink, SI Units(M6)
to heatsink, US Units
for terminals, SI Units(M6)
for terminals, US Units
3
27
2,5
22
–
–
–
–
–
–
–
–
5
44
5
44
5x9,81
325
Nm
lb.in.
Nm
lb.in.
m/s 2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Three devices are supplied in one
SEMIBOX A without mounting hardware,
which can be ordered separately
under Ident No. 33321100
(for 10 SEMITRANS 3)
Larger packing units of 12 or 20 pieces
are used if suitable
Accessories → B 6 – 4
SEMIBOX → C - 1.
B 6 – 38
0898
© by SEMIKRON