SKM 195 GAL 062 D - Fusibles y Semiconductores Profesionales

Absolute Maximum Ratings
Symbol Conditions 1)
V CES
V CGR
I C
I CM
V GES
P tot
T j , (T stg )
V isol
humidity
climate
R GE = 20 kΩ
T case = 25/60 °C
T case = 25/60 °C; t p = 1 ms
per IGBT, T case = 25 °C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
Inverse Diode
I F = –I C T case = 25/80 °C
I FM = –I CM T case = 25/80 °C; t p = 1 ms
I FSM t p = 10 ms; sin.; T j = 150 °C
I 2 t t p = 10 ms; T j = 150 °C
Values
600
600
230 / 195
460 / 390
± 20
700
–40 ... +150 (125)
2 500
Class F
40/125/56
200 / 135
460 / 390
1 400
9800
Units
V
V
A
A
V
W
°C
V
A
A
A
A 2 s
SEMITRANS ® M
PT-IGBT Modules
SKM 195 GB 062 D
SKM 195 GAL 062 D 6)
SEMITRANS 2
Characteristics
Symbol Conditions 1) min. typ. max. Units
V (BR)CES
V GE(th)
I CES
I GES
V CEsat
g fs
C CHC
C ies
C oes
C res
L CE
t d(on)
t r
t d(off)
t f
E on
E off
V GE = 0, I C = 4 mA
V GE = V CE , I C = 4 mA
V GE = 0 T j = 25 °C
V CE = V CES T j = 125 °C
V GE = 20 V, V CE = 0
I C = 200 A V GE = 15 V;
T j = 25 (125) °C
V CE = 20 V, I C = 200 A
per IGBT
V GE = 0
V CE = 25 V
f = 1 MHz
V CC = 300 V
V GE = –15 V / +15 V 3)
I C = 200 A, ind. load
R Gon = R Goff = 10 Ω
T j = 125 °C
≥ V CES
4,5
–
–
–
–
–
50
–
Inverse Diode and FWD of type “GAL” 8)
V F = V EC I F = 150 A V GE = 0 V;
Q rr I F = 200 A; T j = 125 °C 2) –
V F = V EC I F = 200 A T j = 25 (125) °C
–
V TO
r t
T j = 125 °C
T j = 125 °C
–
–
I RRM I F = 200 A; T j = 125 °C 2)
–
Thermal characteristics
R thjc
R thjc
R thch
per IGBT
per diode
per module
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5,5
3
13
–
2,1(2,2)
–
–
–
11
1300
800
–
200
150
600
140
11
17
1,45(1,35)
1,55(1,55)
–
4
70
9,4
–
–
–
–
6,5
–
–
1
2,55(2,65)
–
–
350
–
–
–
20
–
–
–
–
–
–
1,7
1,9
0,9
5,5
–
–
0,18
0,3
0,05
V
V
mA
mA
µA
V
V
S
pF
nF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
GB
6)
GAL
Features
• N channel, epitaxial Silicon
structure (PT- Punch-through
IGBT)
• High short circuit capability, self
limiting, if term. G is clamped to E
• Latch-up free, if clamped as
above
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications → B6 – 43
• Switching (not for linear use)
• Switched mode power supplies
• AC inverter drives
• UPS uninterruptable power
supplies
1) T case = 25 °C, unless otherwise
specified
2) I F = – I C , V R = 300 V,
–di F /dt = 1000 A/µs, V GE = 0 V
3) Use V GEoff = – 5 ... – 15 V
6) The free-wheeling diode of
the GAL type have the data
of the inverse diodes of
SKM 195 GB 062 D
8) CAL = Controlled Axial Lifetime
Technology
Cases and mech. data → B6 – 44
© by SEMIKRON 0898 B 6 – 39

SKM 195 GB 062 D ...
800
W
700
600
M195G062.XLS-1
mWs
40
30
M195G062.XLS-2
E off
E on
T j = 125 °C
V CE = 600 V
V GE = + 15 V
R G = 10 Ω
500
400
20
300
200
10
P tot
100
0
0 20 40 60 80 100 120 140 160
T C °C
E
0
0 100 200 300 400 500
I C
A
Fig. 1 Rated power dissipation P tot = f (T C ) Fig. 2 Turn-on /-off energy = f (I C )
mWs
E
40
30
20
10
0
M195G062.XLS-3
E on
E off
0 20 40 60 80 100
R G
Ω
T j = 125 °C
V CE = 600 V
V GE = + 15 V
I C = 200 A
1000
100
10
I C
A
1
M195G062.XLS-4
t p =20µs
100µs
1ms
10ms
1 10 100 1000 10000
V CE
V
1 pulse
T C = 25 °C
T j ≤ 150 °C
Not for
linear use
Fig. 3 Turn-on /-off energy = f (R G ) Fig. 4 Maximum safe operating area (SOA) I C = f (V CE )
2,5
2
1,5
M195G062.XLS-5
T j ≤ 150 °C
V GE = 15 V
R Goff = 10 Ω
I C = 200 A
12
10
8
6
di/dt= 200 A/µs
600 A/µs
1000 A/µs
2000 A/µs
M195G062.XLS-6
T j ≤ 150 °C
V GE = ± 15 V
t sc ≤ 10 µs
L < 25 nH
I C = 200 A
1
4
allowed numbers of
short circuits: 1s
I Cpuls /I C
I CSC /I C
0
0 100 200 300 400 500 600 700
V CE
V
0
0 100 200 300 400 500 600 700
V CE
V
Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit I C = f (V CE )
B 6 – 40
0898
© by SEMIKRON

250
A
200
150
100
50
I C
0
M195G062.XLS-8
0 20 40 60 80 100 120 140 160
T C °C
Fig. 8 Rated current vs. temperature I C = f (T C )
T j = 150 °C
V GE ≥ 15V
400
A
350
300
250
200
17V
15V
13V
11V
9V
7V
M195G062.XLS-9
400
A
350
300
250
200
17V
15V
13V
11V
9V
7V
M195G062.XLS-10
150
150
100
100
50
I C
0
0 1 2 3 4 5
V CE
V
50
I C
0
0 1 2 3 4 5
V CE
V
Fig. 9 Typ. output characteristic, t p = 250 µs; 25 °C Fig. 10 Typ. output characteristic, t p = 250 µs; 125 °C
P cond(t) = V CEsat(t) · I C(t)
400
A
350
M195G062.XLS-12
V CEsat(t) = V CE(TO)(Tj) + r CE(Tj) · I C(t)
V CE(TO)(Tj) ≤ 1,3 – 0,003 (T j –25) [V]
300
250
200
typ.: r CE(Tj) = 0,0041 + 0,000021 (T j –25) [Ω]
max.: r CE(Tj) = 0,0064 + 0,000021 (T j –25) [Ω]
valid for V GE = + 15
+2
–1
[V]; I C > 0,3 I Cnom
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
150
100
50
I C
0
0 2 4 6 8 10 12 14
V GE
V
Fig. 12 Typ. transfer characteristic, t p = 250 µs; V CE = 20 V
© by SEMIKRON 0898
B 6 – 41

SKM 195 GB 062 D ...
M195G062.XLS-13
M195G062.XLS-14
V
20
I Cpuls = 200 A
100
V GE = 0 V
18
nF
f = 1 MHz
Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.V CE
16
14
12
100V
300V
10
C ies
10
8
1
C oes
6
4
C res
2
C
V GE
0
0,1
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6
0 10 20 30
V
Q CE
V
Gate µC
1000
ns
t don
M195G062.XLS-15
t doff
T j = 125 °C
V CE = 600 V
V GE = ± 15 V
R Gon = 10 Ω
R Goff = 10 Ω
induct. load
10000
ns
1000
M195G062.XLS-16
t doff
t don
T j = 125 °C
V CE = 600 V
V GE = ± 15 V
I C = 200 A
induct. load
100
t f
t r
t r
100
t f
t
t
10
0 100 200 300 400 500
I C
A
Fig. 15 Typ. switching times vs. I C
10
0 20 40 60 80 100
R G
Ω
Fig. 16 Typ. switching times vs. gate resistor R G
200
A
150
T j =125°C, typ.
T j =25°C, typ.
M195G062.XLS-17
mJ
2,5
2
M195G062.XLS-18
R G =
5 Ω
V R = 300 V
T j = 125 °C
V GE = ± 15 V
1,5
10 Ω
100
24 Ω
50
T j =125°C, max.
T j =25°C, max.
1
0,5
43 Ω
75 Ω
I F
0
0 0,4 0,8 1,2 1,6 2
V F
V
E offD
0
0 50 100 150 200 250
I F
A
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
B 6 – 42
0898
© by SEMIKRON

1
M195G062.XLS-19
1
M195G062.XLS-20
K/W
K/W
0,1
0,1
0,01
0,001
Z thJC
0,01
single pulse
D=0,50
0,20
0,10
0,05
0,02
0,01
0,0001
0,00001 0,0001 0,001 0,01 0,1 1
t p
s
Fig. 19 Transient thermal impedance of IGBT
Z thJC = f (t p ); D = t p / t c = t p · f
0,001
0,0001
Z thJC
single pulse
D=0,5
0,2
0,1
0,05
0,02
0,01
0,00001
0,00001 0,0001 0,001 0,01 0,1 1
t
s
p
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z thJC = f (t p ); D = t p / t c = t p · f
A
120
100
M195G062.XLS-22
R G =
5 Ω
10 Ω
V R = 300 V
T j = 125 °C
V GE = ± 15 V
A
120
100
10 Ω
M195G062.XLS-23
R G = 5 Ω
V R = 300 V
T j = 125 °C
V GE = ± 15 V
I F = 200 A
80
60
24 Ω
43 Ω
75 Ω
80
60
75 Ω
43 Ω
24 Ω
40
40
20
20
I RR
0
0 50 100 150 200 250
I F
A
Fig. 22 Typ. CAL diode peak reverse recovery
current I RR = f (I F ; R G )
Typical Applications
include
Switched mode power supplies
DC servo and robot drives
Inverters
DC choppers
AC motor speed control
UPS Uninterruptable power supplies
General power switching applications
I RR
0
14
µC
Q rr
12
10
8
6
4
2
0
0 500 1000 1500 2000
di F/ dt
A/µs
Fig. 23 Typ. CAL diode peak reverse recovery
current I RR = f (di/dt)
75 A
50 A
M195G062.XLS-24
R G =
I F =
5 Ω
10 Ω 200 A
24 Ω
43 Ω
150 A
75 Ω
100 A
0 500 1000 1500 2000 2500
di F /dt
A/µs
V R = 300 V
T j = 125 °C
V GE = ± 15 V
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON 0898
B 6 – 43

SKM 195 GB 062 D ...
SEMITRANS 2
Case D 61
UL Recognized
File no. E 63 532
SKM 195 GB 062 D
Dimensions in mm
Case outline and circuit diagram
Mechanical Data
Symbol Conditions Values Units
min. typ. max.
M 1
M 2
a
w
to heatsink, SI Units(M6)
to heatsink, US Units
for terminals, SI Units(M5)
for terminals, US Units
3
27
2,5
22
–
–
–
–
–
–
–
–
5
44
5
44
5x9,81
160
Nm
lb.in.
Nm
lb.in.
m/s 2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Eight devices are supplied in one
SEMIBOX A without mounting hardware,
which can be ordered separately
under Ident No. 33321100 (for
10 SEMITRANS 2)
Larger packing units of 20 or 42 pieces
are used if suitable
Accessories → B 6 – 4
SEMIBOX → C - 1.
B 6 – 44
0898
© by SEMIKRON