SKM 200 GAL 173 D - Fusibles y Semiconductores Profesionales

Absolute Maximum Ratings
Values
Symbol Conditions 1) Units
V CES 1700 V
V CGR R GE = 20 kΩ 1700 V
I C T case = 25/80 °C 220 / 150 A
I CM T case = 25/80 °C; t p = 1 ms 440 / 300 A
V GES ± 20 V
P tot per IGBT, T case = 25 °C 1250 W
T j , (T stg ) – 40 . . .+150 (125) °C
V isol AC, 1 min. 4000 V
humidity DIN 40 040 Class F
climate DIN IEC 68 T.1 40/125/56
Inverse Diode
8)
"FWD; D1" 6)
I F = – I C T case = 25/80 °C 150 / 100 230 / 150 A
I FM = – I CM T case = 25/80 °C; t p = 1 ms 400 / 300 400 / 300 A
I FSM t p = 10 ms; sin.; T j = 150 °C 1450 2200 A
I 2 t t p = 10 ms; T j = 150 °C 10500 24000 A 2 s
Characteristics
Symbol Conditions 1) min. typ. max. Units
V (BR)CES V GE = 0, I C = 3 mA ≥ V CES – – V
V GE(th) V GE = V CE , I C = 10 mA 4,8 5,5 6,2 V
I CES V GE = 0 ⎫ T j = 25 °C – – 1,5 mA
⎬
V CE = V CES ⎭ T j = 125 °C – – 4,5 mA
I GES V GE = 20 V, V CE = 0 V – – 400 nA
V CEsat I C = 150 A⎧
V GE = 15 V; ⎫ – 3,4(4,5) 3,9(5) V
⎨
⎬
V CEsat I C = 200 A⎩
T j = 25 (125) °C ⎭ – 3,8(5,5) – V
g fs V CE = 20 V, I C = 150 A 54 – – S
C CHC per IGBT – – 200 pF
C ies V GE = 0 – 20 – nF
⎫
C oes ⎬ V CE = 25 V – 2 – nF
C res
⎭ f = 1 MHz – 0,55 – nF
L CE – – 20 nH
t d(on)
⎫ V CC = 1200 V – 580 – ns
t r V GE = + 15 V / - 15 V – 100 – ns
t d(off)
⎪
⎬ I C = 150 A, ind. load – 750 – ns
t f R Gon = R Goff = 4 Ω – 40 – ns
E on
⎪
⎭ T j = 125 °C – 95 – mWs
E off – 45 – mWs
Inverse Diode 8)
V F = V EC I F = 150 A⎧
V GE = 0 V; ⎫ – 2,2(1,9) 2,7 V
⎨
⎬
V F = V EC I F = 200 A⎩
T j = 25 (125) °C ⎭ – 2,4(2,2) – V
V TO T j = 125 °C – 1,3 1,5 V
r T T j = 125 °C – 4,5 6,2 mΩ
I RR I F = 150 A; T j = 25 (125) °C 2) – 60(85) – A
Q rr I F = 150 A; T j = 25 (125) °C 2) – 15(38) – µC
6) 8)
FWD of types “GAL, GAR, D1 "
V F = V EC I F = 150 A⎧
V GE = 0 V; ⎫ – 2,0(1,8) 2,4 V
⎨
⎬
V F = V EC I F = 200 A⎩
T j = 25 (125) °C ⎭ – 2,2(2,0) – V
V TO T j = 125 °C – 1,3 1,5 V
r T T j = 125 °C – 3,5 4,5 mΩ
I RR I F = 150 A; T j = 25 (125) °C 2) – 75(110) – A
Q rr I F = 150 A; T j = 25 (125) °C 2) – 20(50) – µC
Thermal Characteristics
R thjc per IGBT – – 0,1 °C/W
R thjc per diode D/"GAL, GAR, D1" – – 0,32/0,21 °C/W
R thch per module – – 0,038 °C/W
SEMITRANS ® M
IGBT Modules
SKM 200 GB 173 D
SKM 200 GB 173 D1 6)
SKM 200 GAL 173 D 6)
SKM 200 GAR 173 D 6)
SEMITRANS 3
GB GAL GAR
Features
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * I cnom
• Latch-up free
• Fast & soft inverse CAL
diodes 8)
• Isolated copper baseplate
using DCB Direct Copper Bonding
• Large clearance (13 mm) and
creepage distances (20 mm).
Typical Applications:
• AC inverter drives on mains
575 - 750 V AC
• DC bus voltage 750 - 1200 V DC
• Public transport (auxiliary syst.)
• Switching (not for linear use)
1)
6)
6)
T case = 25 °C, unless otherwise
specified
2)
I F = – I C , V R = 1200 V,
– di F /dt = 1000 A/µs, V GE = 0 V
6)
The free-wheeling diodes of the
GAL, GAR and D1 types have
the data of the inverse diodes
of SKM 300 GA 173 D
8)
CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data → B6-258
© by SEMIKRON 0898 B 6 – 253

SKM 200 GB 173 D ...
P:V
0*%[OV
(RQ
T j = 125 °C
V CE = 1200 V
V GE = + 15 V
R G = 4 Ω
(RII
(
Fig. 1 Rated power dissipation P tot = f (T C ) Fig. 2 Turn-on /-off energy = f (I C )
,& $
P:V
0*%[OV
(RQ
T j = 125 °C
V CE = 1200 V
V GE = + 15 V
I C = 150 A
1 pulse
T C = 25 °C
T j < 150 °C
(RII
(
5* Ω
Fig. 3 Turn-on /-off energy = f (R G ) Fig. 4 Maximum safe operating area (SOA) I C = f (V CE )
T j < 150 °C
V GE = + 15 V
R Goff = 4 Ω
I C = 150 A
T j < 150 °C
V GE = + 15 V
t sc < 10 µs
L ext < 50 nH
I C = 150 A
Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit I C = f (V CE )
B 6 – 254 0898
© by SEMIKRON