FDD7N20/FDU7N20 N-Channel MOSFET

FDD7N20 / FDU7N20N-Channel MOSFET200V, 5A, 0.69ΩFeatures• R DS(on) = 0.58Ω ( Typ. ) @ V GS = 10V, I D = 2.5A• Low gate charge( Typ. 5nC )• Low Crss ( Typ. 5pF )• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliantGSDD-PAKFDD SeriesG D SDescriptionApril 2007UniFET TMtmThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especically tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies and active power factorcorrection.I-PAKFDU SeriesGDSFDD7N20 / FDU7N20 200V N-Channel MOSFETMOSFET Maximum Ratings T C = 25 o C unless otherwise notedSymbol Parameter Ratings UnitsV DSS Drain to Source Voltage 200 VV GSS Gate to Source Voltage ±30 VI DDrain Current-Continuous (T C = 25 o C) 5-Continuous (T C = 100 o C) 3AI DM Drain Current - Pulsed (Note 1) 15 AE AS Single Pulsed Avalanche Energy (Note 2) 62.5 mJI AR Avalanche Current (Note 1) 5 AE AR Repetitive Avalanche Energy (Note 1) 4.3 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsP DPower Dissipation(T C = 25 o C) 43 W- Derate above 25 o C 0.34 W/ o CT J , T STG Operating and Storage Temperature Range -55 to +150 o CT LMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds300 o CThermal CharacteristicsSymbol Parameter Ratings UnitsR θJC Thermal Resistance, Junction to Case 2.9o C/WR θJA Thermal Resistance, Junction to Ambient 110©2007 Fairchild Semiconductor CorporationFDD7N20 / FDU7N20 Rev. A1www.fairchildsemi.com

Package Marking and Ordering Information T C = 25 o C unless otherwise notedDevice Marking Device Package Reel Size Tape Width QuantityFDD7N20 FDD7N20TM D-PAK 380mm 16mm 2500FDD7N20 FDD7N20TF D-PAK 380mm 16mm 2000FDU7N20 FDU7N20 I-PAK - - 70Electrical CharacteristicsSymbol Parameter Test Conditions Min. Typ. Max. UnitsOff CharacteristicsBV DSS Drain to Source Breakdown Voltage I D = 250μA, V GS = 0V, T J = 25 o C 200 - - VΔBV DSS Breakdown Voltage TemperatureI/ ΔT J CoefficientD = 250μA, Referenced to 25 o C - 0.2 - V/ o CVI DSSZero Gate Voltage Drain CurrentDS = 200V, V GS =0V - - 1 μAV DS = 160V, T C = 125 o C - - 10 μAI GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±100 nAOn CharacteristicsV GS(th) Gate Threshold Voltage V GS = V DS , I D = 250μA 3.0 - 5.0 VR DS(on) Static Drain to Source On Resistance V GS = 10V, I D = 2.5A - 0.58 0.69 Ωg FS Forward Transconductance V DS = 40V, I D = 2.5A (Note 4) - 6.2 - SDynamic CharacteristicsC issInput Capacitance- 185 250 pFV DS = 25V, V GS = 0VC oss Output Capacitance - 45 65 pFf = 1MHzC rss Reverse Transfer Capacitance - 5 10 pFQ gTotal Gate Charge at 10V- 5 6.7 nCQ gs Gate to Source Gate Charge V DS = 160V, I D = 7A- 1.7 - nCV GS = 10VQ gd Gate to Drain “Miller” Charge (Note 4, 5) - 2.4 - nCFDD7N20 / FDU7N20 200V N-Channel MOSFETSwitching Characteristicst d(on) Turn-On Delay Time- 9 28 nst r Turn-On Rise Time V DD = 100V, I D = 7A- 30 70 nst d(off) Turn-Off Delay TimeR G = 25Ω- 13 36 nst f Turn-Off Fall Time (Note 4, 5) - 10 30 nsDrain-Source Diode CharacteristicsI S Maximum Continuous Drain to Source Diode Forward Current - - 5 AI SM Maximum Pulsed Drain to Source Diode Forward Current - - 20 AV SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 5A - - 1.4 Vt rr Reverse Recovery Time V GS = 0V, I SD = 7A- 120 - nsQ rr Reverse Recovery Charge dI F /dt = 100A/μs (Note 4) - 0.4 - μCNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L =5mH, I AS = 5A, V DD = 50V, R G = 25Ω, Starting T J = 25°C3. I SD ≤ 5A, di/dt ≤ 200A/μs, V DD ≤ BV DSS , Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsFDD7N20 / FDU7N20 Rev. A2www.fairchildsemi.com

Typical Performance CharacteristicsID,Drain Current[A]Figure 1. On-Region Characteristics201010.1V GS = 10.0 V8.0 V7.0 V6.5 V6.0 V5.5 VFigure 2. Transfer Characteristics* Notes :* Notes :1. 250μs Pulse Test2. T C = 25 o 1. V DS = 25VC2. 250μs Pulse Test0.0110.04 0.1 1 10 254 6 8 10 12V DS ,Drain-Source Voltage[V]V GS ,Gate-Source Voltage[V]Figure 3. On-Resistance Variation vs.Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Currentand Temperature1.5ID,Drain Current[A]201020010025 o C150 o C-55 o CFDD7N20 / FDU7N20 200V N-Channel MOSFETRDS(ON) [Ω],Drain-Source On-Resistance1.20.90.6V GS = 10VV GS = 20V* Note : T J = 25 o C0.30 2 4 6 8 10I D , Drain Current [A]IS, Reverse Drain Current [A]101150 o C25 o CNotes:1. V GS= 0V2. 250μs Pulse Test0.20.0 0.7 1.4 2.1 2.8 3.5V SD, Body Diode Forward Voltage [V]Capacitances [pF]Figure 5. Capacitance Characteristics500400300200100C ossC issC rssCiss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd* Note:1. V GS = 0V2. f = 1MHzFigure 6. Gate Charge CharacteristicsVGS, Gate-Source Voltage [V]108V DS = 160V6V DS = 100VV DS = 50V4200.1 1 10V DS , Drain-Source Voltage [V]* Note : I D = 7A030 0 1 2 3 4 5 6Q g , Total Gate Charge [nC]FDD7N20 / FDU7N20 Rev. A3www.fairchildsemi.com

Typical Performance Characteristics (Continued)BVDSS, [Normalized]Drain-Source Breakdown VoltageID, Drain Current [A]Figure 7. Breakdown Voltage Variationvs. Temperature1.21.11.00.9* Notes :1. V GS = 0V2. I D = 250μA0.8-100 -50 0 50 100 150 200T J , Junction Temperature [ o C]Figure 9. Maximum Safe Operating Area501010.1Operation in This Areais Limited by R DS(on)* Notes :1. T C = 25 o C2. T J = 150 o C3. Single Pulse0.011 10 100V DS , Drain-Source Voltage [V]20μs100μs1ms10msDC500RDS(on), [Normalized]Drain-Source On-ResistanceFigure 8. On-Resistance Variationvs. Temperature3.02.52.01.51.00.5* Notes :1. V GS = 10V2. I D = 2.5A0.0-100 -50 0 50 100 150 200T J , Junction Temperature [ o C]Figure 10. Maximum Drain Currentvs. Case TemperatureID, Drain Current [A]654321025 50 75 100 125 150T C , Case Temperature [ o C]FDD7N20 / FDU7N20 200V N-Channel MOSFETFigure 11. Transient Thermal Response Curve5Thermal Response [Z θJC ]10.10.50.20.10.050.020.01P DMt 1t 2* Notes :1. Z θJC (t) = 2.9 o C/W Max.Single pulse2. Duty Factor, D=t 1 /t 23. T JM - T C = P DM * Z θJC (t)0.0110 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1Rectangular Pulse Duration [sec]FDD7N20 / FDU7N20 Rev. A4www.fairchildsemi.com

Gate Charge Test Circuit & WaveformResistive Switching Test Circuit & WaveformsFDD7N20 / FDU7N20 200V N-Channel MOSFETUnclamped Inductive Switching Test Circuit & WaveformsFDD7N20 / FDU7N20 Rev. A5www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & WaveformsD U T+I S DV DS_LDr iv e rR G S a m e T y p ea s D UTV G S • d v / d t c o n t r o lle d b y R G• I S D c o n t r o lle d b y p u ls e p e r io dV DDFDD7N20 / FDU7N20 200V N-Channel MOSFETV GS( D riv e r )G a t e P u ls e W id t hD =--------------------------Ga t e P u ls e P e r io d1 0 VI F M , B o d y D io d e F o r w a r d C u r r e n tI S D( D U T )d i/ d tI RMB o d y D io d e R e v e r s e C u r r e n tV DS( D U T )B o d y D io d e R e c o v e r y d v / d tV S DV DDB o d y Dio d eF o r w a r d V o lt a g e D r o pFDD7N20 / FDU7N20 Rev. A6www.fairchildsemi.com

Mechanical DimensionsD-PAKFDD7N20 / FDU7N20 200V N-Channel MOSFETFDD7N20 / FDU7N20 Rev. A7www.fairchildsemi.com

Mechanical DimensionsI-PAKFDD7N20 / FDU7N20 200V N-Channel MOSFETFDD7N20 / FDU7N20 Rev. A8www.fairchildsemi.com

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