THE GAN WORKSHOP 2012 - CMC Microsystems

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CMC welcomes you to the GaN Workshop 2012Join in the discussion as leaders from industry and academia present onrecent developments and challenges in this research space.Presentations and focus groups will center on gallium nitride market updates,fabrication results and technology roadmaps.GaN 2012 will be featuring presentations by experts from:Yole DéveloppementCanadian Photonics Fabrication CentreFBH GermanyAgilentMeaglowEricssonGaN SystemsCommunications Research CentreUniversity of British ColumbiaUniversity of WaterlooUniversity of CalgaryCarleton UniversityUniversity of TorontoFeatures of this workshop include:-- Market status of GaN offered by Yole Développement-- GaN challenges and recent developments-- Canadian Photonics Fabrication Centre GaN Roadmap-- Latest results from previous GaN runs-- Focus groupJoin in on the conversationParticipate in the community discussion forums.Follow us on Facebook for regularupdates on everything CMC.http://cmc.ca/community/forumshttp://www.cmc.ca/http://www.facebook.com/cmc.microsystems
GaN in the CMOS Power Fab:A market and industry vision to 2020:Jeff PerkinsYole DéveloppementTwo thirds of the CMOS Power Electronics market falls in the 0-900Vvoltage range: mostly cost-driven consumer, lighting and IT applications. Thesesegments require high-volume manufacturing capability as well as aggressive pricepositioning. GaN-on-Si appears as the most cost effective setup to reachthese 0-900V applications. It has been shown that GaN-on-Si HEMT couldbe 50% cheaper than the same SiC device. However, current state-of-the-artremains 2x and even 3x more expensive than the similar silicon device. The nextchallenge for GaN devices will be to shrink its intrinsic cost structure and to be 100%CMOS compatible in order to enter in the existing 6” and 200mm CMOS fabs for massproduction.GaN Based Energy-Aware Electronics for Wireless, Satellite, andPower Applications:GaN will enable the development of “next generation” of wireless and satellitecommunication systems that are needed to meet emerging demands for high-datathroughput, energy-efficient wireless systems, reduced carbon footprints of wirelessnetworks, ubiquitous network development, interoperability among diversecommunication standards, and improved network and coverage for remote areas.It will also enable clean-tech power electronic solutions for smart and efficient,renewable energy grids and information technology (IT) applications. However,challenges at multiple levels of GaN technology (device, circuit and system) needto be overcome. The challenges present in maximizing the impact of GaN technologytranscend disciplinary boundaries and necessitate collaboration betweendiverse areas of specialization within electronics and material science. Hence, the GaNBased Energy- Aware Electronics for Wireless, Satellite, and Power Applications projectis organized into four interrelated theme areas: Semiconductor fabrication, GaNdevices modeling, GaN based microwave circuits for energy aware radios and GaNpower electronics. The project is supported by the Ontario Research Fund-ResearchExcellence program. The principal investigator and three of the co-investigators willeach lead a theme area of this project. Three research sites in Kingston, Ottawa, andWaterloo were selected for their state of the art, innovative facilities and equipmentavailable to support the work of this project. The approach taken from both themicro and macro levels concurrently will directly result in improving the GaNdevices, model accuracy, and circuit performance beyond what is possible withtraditional non-systemic approaches. The presentation will give a brief introductionto the scope of each theme and the goals to achieve for the next four years.Slim BoumaizaUniversity of Waterloo
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THE GAN WORKSHOP 2012 - CMC Microsystems

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