Failure Analysis (FA) Introduction (Failure Analysis Concept)

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Failure Analysis (FA) Introduction
(Failure Failure Analysis Concept)
Failure Analysis
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Failure Analysis (FA)
FA Definition:
To identify the failure mechanism of failed product.
FA Concept:
Not only to confirm the failure, but trace the root causes.
FA Attitude:
1) Why/What/Who/When/How it failed.
2) What should we do now.
3) How do we improve better.
FA Value:
1) Identification of material-related defects.
2) Solving manufacturing problems.
3) Solving service-related problem.
4) Providing corrective or prevention measures.
5) Providing manufacturers’ insurance or legal defense/claim cases
6) To improve product design, production yield and reliability
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水
落
石
出
也
要
明
察
秋
毫
Failure Analysis
時時留意處處小心
- Failure mode
- Failure mechanism
- Root cause
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真
相
大
白
仍
須
鐵
證
如
山

Failure Analysis Elements
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• Current Status (Failure rate)
• Failure Mode (EFA)
• Failure Mechanism (Possible)
• Failure Analysis Technology (Tools)
• FA Procedure (Flowchart)
• Result Consistence (Date Speak)
• Time Pressure (Resource Limit)
Failure Analysis
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IC Failure Mechanism/Property
Thermomechanical
-Large Elastic
Deformation
-Yield
-Buckling
-Brittle Fracture
-Ductile Fracture
-Interfacial
De-adhesion
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Overstress
Electrical Chemical
and Radiation
-Electromagnetic
Interference
Damage
-Electrical
Overstress
-Gate Oxide
Breakdown
Discharge
-Second
Breakdown
-Ionic
Contamination
-Single Event
Upset
-Soft Error
Thermomechanical
-Fatigue Crack
Initiation
-Fatigue Crack
Propagation
-Creep
-Wear
Wear-out
-Gate Oxide
Breakdown
Time Dependent
Dielectric
Breakdown
-Slow Trapping
-Surface charge
Spreading
-Hot electrons
-Hillock
Formation
-Contact Spiking
-Electromigration
Failure Analysis
Electrical Chemical
and Radiation
-Diffusion
-Interdiffusion
-Corrosion
-Stress Corrosion
-Dendritic Growth
-Soft Error
-Excessive Leakage
Currents
-Radiation Induced
Thermal Breakdown
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Electrical Analysis
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DC (Direct Current): Assembly related EFA
AC (Alternative Current): Device related EFA
��DC DC -- Open/Short: Pin Continuity/ESD Test
Failure Analysis
-- Leakage: Input Buffer High/Low Current Test
-- ICC: Standby/Dynamic/Refresh Current Test
��AC AC -- High/Low Voltage Applied
-- Data High/Low (1/0) Applied
-- Pattern (Scan/Checkerboard/March) Applied
-- Timing (Speed) Test
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Parameter Defect
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Vcc Vss
IO1
IO2
IO3
IO4
Lead
- Open (開路)
- Short (短路)
- Leakage (漏電)
- Idd (靜態電流)
Lead-frame
Compound
Gold-wire
bond-pad
Chip
Physical Package Diagram
Vcc
Vss
IO16
IO15
IO14
IO13
Failure Analysis
VLSI Circuit
V53C16258
1 Vcc Vss 44
2 I/O 1 I/O 16 43
3 I/O 2 I/O 15 42
4 I/O 3 I/O 14 41
5 I/O 4 I/O 13 40
6 Vcc Vss 39
7 I/O 5 I/O 12 38
8 I/O 6 I/O 11 37
9 I/O 7 I/O 10 36
10 I/O 8 I/O 9 35
13 NC NC 32
14 NC LCAS 31
15 WE UCAS 30
16 RAS OE 29
17 NC A8 28
18 Ao A7 27
19 A1 A6 26
20 A2 A5 25
21 A3 A4 24
22 Vcc Vss 23
Pin Names (V53C16258)
A0-A8 Address Inputs
RAS Row Address Strobe
UCAS Column Address Strobe
/Upper Byte Control
LCAS Column Address Strobe
/Lower Byte Control
WE Write Enable
OE Output Enable
I/O1~I/O 16 Date Input, Output
Vcc +5V Supply
Vss 0V Supply
NC No Connect
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Open/Short
E
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Pin connection
- Sink 0.1 mA
- Measure V
- All pins
+ -
1 40
2
1
39
40
3
2
38
39
4
3
37
38
5
4
36
37
6
5
35
36
7
6
34
35
8
7
33
34
9
8
32
33
10
9
31
32
11
10
30
31
12
11
29
30
13
12
28
29
14
13
27
28
15
14
26
27
16
15
25
26
17
16
24
25
18
17
23
24
19
18
22
23
20
19
21
22
20 21
Vss=0V
C
I (mA)
0.1
E
Input
I
Failure Analysis
Force current I (0.1mA) to measure voltage V
Short
0.7
Circuit Diagram (ESD Protection)
V
EDS
0.2V 2V
I (mA)
0.1
Vdd
Vss
Judgement
Pass Open
I (mA)
0.7
V
C
0.1
Output
0.7
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V

Leakage
Vdd=5V/3.3V Vss=0V
AUX
C
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Pin connection
- Force 0V and 5V (3.3V)
- Measure I
- All pins
1 40
2
1
39
40
3
2
38
39
4
3
37
38
5
4
36
37
6
5
35
36
7
6
34
35
8
7
33
34
9
8
32
33
10
9
31
32
11
10
30
31
12
11
29
30
13
12
28
29
14
13
27
28
15
14
26
27
16
15
25
26
17
16
24
25
18
17
23
24
19
18
22
23
20
19
21
22
20 21
E
0 - 5/3.3V
C
Leakage Lo
EDS
Leakage Hi
Circuit Diagram
Vdd=5/3.3V
Vss=0V
Judgement
Failure Analysis
AUX
E
Output
Force voltage V (Lo=0V, Hi=5V) to measure current I
10uA (depend on spec.)
Pass Leakage
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Idd Current
Vdd=5V/3.3V
measure Idd Vss=0V
C
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Pin connection
- Force Vdd=5V(3.3V)
- Measure I
- Vdd and Vss
1 40
2
1
39
40
3
2
38
39
4
3
37
38
5
4
36
37
6
5
35
36
7
6
34
35
8
7
33
34
9
8
32
33
10
9
31
32
11
10
30
31
12
11
29
30
13
12
28
29
14
13
27
28
15
14
26
27
16
15
25
26
17
16
24
25
18
17
23
24
19
18
22
23
20
19
21
22
20 21
E
Input
Circuit Diagram
EDS
Vdd=5/3.3V
Failure Analysis
Idd
Vss=0V
Judgement
C
Pass Idd fail
E
Output
Force voltage V (5V) to measure current I
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Feature
- Pin to to pin test
- O/S test
- Leakage test
- Idd test
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Curve Tracer
Tektronix 370A curve tracer spec.
Range Resolution
V -500V ~ +500V 5mV
I -2A ~ +2A 100pA
AUX -40V ~ +40V 20mA
I-V Curve
Feature
Failure Analysis
DC Tester
- Socket test
- O/S test
- Leakage test
- Idd test
ChipMOS DC tester spec.
Range Resolution
V -110V ~ +110V 100μV
I -1A ~ +1A 100fA
Normal Open Short Leakage
Test socket
TSOP II 54L
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X-光顯微儀
(XRM, X-Ray Microscopy)
檢測產品內部金線連接, 金線傾斜及銀膠氣洞等
(wire connection, wire sweep, epoxy void)
Non-Destructive Test, NDT
Brand: FEINFOCUS
Model: FXS-100.23
Failure Analysis
超音波掃描儀
(SAT, Scanning Acoustic Tomograph)
檢測產品內部脫層, 氣洞, 晶片傾斜等
(delamination, void, chip tilt)
Brand: SONIX
Model: HS-1000
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膠體開蓋機
(Decapsulator)
去除產品封膠材料以便觀察金線及晶片等
(Move away EMC to observe wire and chip)
Brand: NIPPON / Model: PS101
Destructive Test
Failure Analysis
金相試片製作
(DPA, Destructive Physical Analysis)
產品內部結構及尺寸分析, 缺陷檢測
(Internal structure and dimension)
Chip
(Lead frame)
(Epoxy)
(Die pad)
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Brand: BUEHLER
Model: ISOMET
Brand: EXTEC
Model: 14560 (p)
14565 (l)
Brand: BUEHLER
Model: ECOMET 3
Brand: ALLIED
Model: METPREP 8
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Powder
DPA Preparation, Cross-Section
Liquid
切割
切割
切割
切割
(Cutting) (Cutting)
鑲埋
鑲埋
鑲埋
鑲埋
(Monting) (Monting)
研磨
研磨
研磨
研磨
(Grinding) (Grinding)
拋光
拋光
拋光
拋光
(Polishing) (Polishing)
Failure Analysis
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OM Appearance: Package crack
XRM: Cannot find abnormality
P52
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P51
P48
P50
P49
P48
P47
P46
P45
P49
SEM: Find 2 nd stitch bond crack
compound
Au-wire
Ag-plating
Cu-leadframe
Failure Analysis
Crack-line
Failure mode: 2 nd bond crack/broken
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光學顯微鏡
(Optical Microscopy)
Measurescopy
Brand: NIKON
Model: MM-60/L3U
H.M. Optical Microscopy
Brand: NIKON
Model: OPTZPHOT-200
Auxiliary Tools (Microscope)
Stereoscopy
Brand: NIKON
Model: SMZ-10A
Failure Analysis
掃描式電子顯微鏡
(SEM, Scanning Electron Microscopy)
Brand: HITACHI
Model: S-3500N
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(Chemical Analysis, FTIR, Auger, EDX, AA…)
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Device Related FA Instruments
光子顯微鏡
(EM, Emission Microscopy)
液晶顯微鏡
(LCM, Liquid Crystal Microscopy)
聚焦離子束儀
(FIB, Focus Ion Beam)
記憶體分析儀
(MOSAID Memory Analyzer)
Failure Analysis
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XRM Image
SAT Picture
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DC Tester
(Socket, all pins)
X-Ray Microscope
(Feinfocus FXS 100.23)
Liquid Crystal
Microscope
(Wentworth MP-2300)
Failure Analysis Procedure
PASS
Open/Short
only
Open/Short
only
Leakage only
(Hot-spot)
Sample
Open/Short Test
Leakage (Hi/Lo)
Idd Current Test
XRM
SAT (Cause)
Decapsulation
SEM
Chip Probing
LCM
Report
(Cause)
(Cause)
- Sample
- Pin Assignment
- Socket
Curve Tracer
(Tektronix 370A)
(Pin to Pin)
Scanning Acoustic
Tomograph
(SONIX HS-1000)
Scanning Electron
Microscope
(HITACHI S-3500N)
Failure Analysis
SEM Photo
LCM Photo
Hot Spot
(Defect)
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Tung-Bao Lu
Reference
Failure Analysis
www.semiconfareast.com Crime Scene Investigation
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