Stress and Diffusion Resistance of Low Temperature ... - Sematech

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Leakage current between TSVs blocksALLIANCE1.0E-06I (A)1.0E-1040µm1.0E-140 1 2 3 4 5V (V)‣ The low temperature SiON film with controlled propertiessatisfy leakage current performance.13

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Multi-TSV structure in bump-less TSVALLIANCEFIB-SEM image <strong>of</strong> Bird's-eye viewCu-Multiple TSV12µm10µmBEOLSi(2)AdhesiveSi(1)10µm‣ Multiple TSV design using small via is provided with lower stress,lower via resistance <strong>and</strong> multi-functionally.12

Leakage current between TSVs blocksALLIANCE1.0E-06I (A)1.0E-1040µm1.0E-140 1 2 3 4 5V (V)‣ The low temperature SiON film with controlled propertiessatisfy leakage current performance.13

Page 1: ALLIANCEStress and Diffusion Resist
Page 5 and 6: Advantage of Bump-less technologyAL
Page 7: Advantage of Bump-less technology C
Page 10 and 11: Cu diffusion depth into SiON filmAL
Page 14 and 15: Yield of BEOL interconnects with TS
Page 16 and 17: Example of residual stress distribu
Page 18 and 19: SummaryALLIANCEWe demonstrated LT-P
Page 20: Cu diffusion rate as a function of

Stress and Diffusion Resistance of Low Temperature ... - Sematech

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