Roadmap of SiGe BiCMOS Technologies - Avsusergroups.org

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SiGe BiCMOS Landscape (Dec ‘01)Ft (GHz)25020015010050Ft (GHz)2502001501005000.0 0.5 1.0 1.5 2.0 2.5Current Consumption* (mA)* Current required to reach peak Ft for minimum We and Le=1µm00 50 100 150 200Fmax (GHz)200 GHz Ft/Fmax opens the door to 80 Gb applications in Silicon
Outline• Device Design for 200 GHz Ft and Fmax• 0.18 µm SiGe BiCMOS Process Integration
Page 3 and 4: Continued dominance of bipolar in R
Page 6 and 7: Technology cost comparisonsRelative
Page 8 and 9: Wireless: 3G System Block DiagramDi
Page 10 and 11: Outline• Device Design for 200 GH
Page 12 and 13: Device Design for 200 GHz Ft and Fm
Page 14 and 15: SiGe Emitter Resistance1/Ft ~ (Re +
Page 16 and 17: SiGe Base Width1/Ft ~ (Re + kT/Ic)
Page 18 and 19: SiGe Base WidthPeak Ft (GHz)-25% Wb
Page 22 and 23: 0.18 µm SiGe BiCMOS Process Integr
Page 24 and 25: SiGe BiCMOS: IsolationDeep TrenchJu
Page 26 and 27: SiGe BiCMOS: Gate FormationGatePock
Page 28 and 29: SiGe BiCMOS: CMOS / SilicideCo Sili
Page 30: Conclusions• The bipolar device h

Roadmap of SiGe BiCMOS Technologies - Avsusergroups.org

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