HIGH POWER BIAS TEE BTN1-0026 - Marki Microwave

HIGH POWER BIAS TEEBTN1-0026The BTN1-0026 is constructed using a custom-made, resonance-freeconical inductor to achieve extremely broadband performance. Byminimizing the overall inductor size and using proprietary packagingtechniques, the BTN1-0026 is a superior option in terms of performance,reliability and ease-of-use when compared to cumbersome user-designedbias tees employing off-the-shelf conical inductors. The extremely low cutoffand resonance free operation makes the BTN1-0026 suitable for biasingamplifiers, lasers, and modulators driven with high frequency data patterns.Features Broadband: 500 kHz to 26.5 GHz Low Insertion Loss High Power Non-Resonant Compact SizeElectrical Specifications - Specifications guaranteed from -55 to +100°C, measured in a 50Ω system.Insertion Loss (dB)DC Port Isolation (dB)Parameter Frequency Range Min Typ Max2 MHz-26.5 GHz 1 2500 kHz-2 MHz 2500 kHz -1 GHz 501-26.5 GHz 30Return Loss (dB)14500 kHz-26.5 GHzRF Power (W) 10DC Current (A) 1DC Voltage (V) 50DC Resistance (Ω) 0.5Risetime /Falltime (ps) 1 101 Specified as 90%/10%. Calculated from bt 2 = ( out 2 – in 2 ).470[11.94].235[5.97].050[1.27].470[11.94].370[9.40]BTN10026D/CPROJECTIONINCH[MM]XXX=±.005XX=±.02.135[3.43].200[5.08]Ø.067 Thru4 PL[1.70].20[5.0].39[9.9]215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com06/12/13

Insertion Loss (dB)Return Loss (dB)HIGH POWER BIAS TEEBTN1-0026Page 2SchematicRFCommon(RF+DC)DCApplication ExamplesFig. 1. Example Schematics of a) Broadband Microwave Amplifier Biasing, b) Laser/LED Biasing for DataCommunication and c) Mach-Zender Modulator Biasing for Data CommunicationTypical Performance0-20-5RF PortCommon Port-4-10-6-15-8-20-100 3 6 9 12 15 18 21 24 27Frequency (GHz)-250 3 6 9 12 15 18 21 24 27Frequency (GHz)Fig. 2. RF insertion loss.Fig. 3. Return loss.215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com06/12/13

Group Delay (ps)Insertion Loss (dB)Isolation (dB)Common Port Return Loss (dB)Isolation (dB)Isolation (dB)Insertion Loss (dB)HIGH POWER BIAS TEEBTN1-0026Page 30-5-10-15-20-25-30-35-400 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2Frequency (MHz)0-10DC to RF-20DC to Common-30-40-50-60-70-800 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5Frequency (MHz)Fig. 4. Low frequency RF response.Fig. 5. Low frequency isolation.0-10-20-30-40-500 3 6 9 12 15 18 21 24 27Frequency (GHz)0-10DC to RF-20DC to Common-30-40-50-60-70-800 20 40 60 80 100 120 140 160 180 200Frequency (kHz)Fig. 6. DC-RF isolation.Fig. 7. Near DC isolation18000160-5-2140-10-4120-15-6100800 3 6 9 12 15 18 21 24 27Frequency (GHz)-20-85C 85C-25-100 3 6 9 12 15 18 21 24 27Frequency (GHz)Fig. 8. Group delay.Fig. 9. Performance over temperature215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com06/12/13

HIGH POWER BIAS TEEBTN1-0026Page 4INPUTOUTPUTFig. 7. Oscilloscope measurements of the BTN1-0026 with a 10Gb/s PRBS pattern. Eye diagrams are takenwith a 2 31 -1 PRBS input demonstrating minimal eye distortion/closure afforded by the extremely low frequencyoperation of the bias tee.Model NumberDescriptionBTN1-0026 500 kHz to 26.5 GHz High Power Bias Tee with SMA connectors 11 Consult factory for other connector options.Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Microwave makes nowarranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liabilitywhatsoever arising out of the use of or application of any product.215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com06/12/13