COAX products - Modulight

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Let us work for youProfileModulight, Inc. is a privately held company that designs,manufactures and markets laser diodes for telecom,datacom, CATV, industrial, medical, automotive, spaceand defense applications.Our products are manufactured at our own 32,000 sq.ft.state-of-the-art facility, housing class 100 cleanroomwith automated die handling equipment. All our productshave manufacturability, robust durability and unchallengedpre- and after-sales technical support as built-infeatures. Agility, Reliability, Profitability and CustomerFocus are key to everything we do.Modulight was founded in Year 2000. The Company differentiatesfrom many startups founded during the hypeyears by turning first profitable year already in 2002.During 2005 we expect to realize is >$3M in revenue.Unchallenged customer serviceWe have integrated all manufacturing steps, productdata management (PDM) and related supporting processesinto Modulight Database (MLDB) - a noveldatabase centric manufacturing and product developmentsystem. All our customers without exception havebeen impressed what we can deliver with this genuinelyunique system! We invite You to explore together withus the productivity gains and product performance improvementwe can achieve together by utilizing MLDB forYour needs.Modulight’s wholly owned facility in Tampere, FinlandCustomer benefits• Demonstrated capability to speed upcustomer projects and help improvecustomers’ products• Robust products with demonstratedoperation in most demanding applicationsand very harsh environments• Controlled design and manufacturingprocess with unchallenged, detailedreporting capabilities for customer benefit• Reliable, Agile volume production• Strong pre- and after-sales support2

Table of contentsCompany profileCoaxial fiber pigtail lasers1310 nm FP laser diode for analog applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41310 nm DFB laser diode for analog applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 61550 nm FP laser diode for analog applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81550 nm DFB laser diode for analog applications . . . . . . . . . . . . . . . . . . . . . . . . . . 10CATV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121310 nm FP laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . . 13DFB laser diode for CWDM applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15xTO-can lasers1310 nm FP laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . . 17OTDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191310 nm DFB laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . 201430 nm FP laser diode for 1 Gb/s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221490 nm DFB laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . 241550 nm FP laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . 26Bare die lasers1310 nm FP laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . . 281310 nm DFB laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . 3210GBASE-LRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 341310 nm FP laser diode for 10 Gb/s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 351490 nm DFB laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . 391550 nm FP laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . . 411550 nm DFB laser diode for 1.25 Gb/s and 2.5 Gb/s . . . . . . . . . . . . . . . . . . . . . . . 43Custom productsLasers for range finding and LIDAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45High power lasers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46xxGeneral product informationRoHS compliance statement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47Reliability information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48Liability note, safety information & ESD information . . . . . . . . . . . . . . . . . . . . . . . . . 49xxModulight Quality Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50Modulight values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 513

ML-COAX-1310-FP-AL-31310 nm Coaxial Fiber Pigtailed FP LaserFor Analog ApplicationsApplications• Cable TV (CATV)• RF over fiber• Hybrid fiber coax (HFC) networksFeatures• Coaxial packaged laser diode module• Low threshold current• Narrow spectral linewidth• Low voltage and differential resistance• MQW active region FP laser diode• Monitor photodiode at rear mirror• 4-pin coaxial package with pigtail• With optical isolator (optional)Electro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test ConditionThreshold Current Ith 7 15 mAOperating Current Iop - 40 60 mA Pf=3mW, CWOptical Output Pt 2 3 6 mW Iop=40mAOperating Voltage Vop - 1.5 1.8 V Pf=3mW, CWSlope Efficiency η 0.1 - - W/A CW, Tc=-20°C0.07 - - CW, Tc=25°C0.04 - - CW, Tc=85°CPeak Wavelength λ 1280 1310 1340 nm Pf=3mW, CWSpectral Width ∆λ - 1 2 nm CW, Pf=3mWMonitor Current lm 0.1 - - mA Vrpd=5V, Pf=3mWMonitor Dark Current lmd - - 0.1 µA Vrpd=5VLD Series Resistance Rld - 8 ΩTracking Error 1 TE -1 - 1 dB Tc=25-85°C3rd order Intermodulation 2 IMD3 - - -40/-45 dBcRelative Intensity Noise RIN - - -140/-145 dB/Hz Pf=3mW, CW, f=1.8GHzOptical Isolation 3 Iso NA/30 - - dBNote 1: CW, APC(25°C)=3mW , TE=10log(PL(Tc)/PL(25°C))Note 2: CW, 2 tone, RF input Power=0dBm, f1=1.8G, f2=1.802GHzNote 3: Left values: without isolator. Right values: with isolator4

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Limit Values UnitMin MaxLight Output Po 7 mWLD Reverse Voltage Vrld 2 VPD Reverse Voltage Vrpd 20 VOperating Temperature Topr -20 85 °CStorage Temperature Tstg -40 85 °CSoldering Temperature Tsol 260 °CCOAX productsFlangePin Layout (bottom view)Ordering InformationML - COAX - 1310 - FP - AL - 3 - X- X- XConnector Pin layout 1 VersionSP = SC/PC 1 A1 = no isolatorSA = SC/APC 2 A2 = optical isolatorFP = FC/PC 3FA = FC/APCN = no connector1 Please see pin layoutsExample: ML-COAX-1310-FP-AL-3-SP-1-A2Coaxial fiber pigtailed 1310 nm FP module for analogue applications, 3 mW power level,SC/PC connector, pin layout 1, with optical isolator5

ML-COAX-1310-DFB-AL-31310 nm Coaxial Fiber Pigtailed DFB LaserWith Optical Isolator For Analog ApplicationsApplications• Cable TV (CATV)• RF over fiber• Hybrid fiber coax(HFC) networksFeatures• MQW Active Region DFB Laser Diode• Coaxial Laser Diode Module• Low Threshold Current, High Output Power• With Optical Isolator• InGaAs/InP Monitor Photodiode at Rear Mirror• 4-pin Coaxial Package with PigtailElectro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test ConditionThreshold Current Ith 10 20 mAOperating Current Iop - 40 60 mA Pf=3mW, CWOptical Output Pt 2 3 6 mW Iop=40mAOperating Voltage Vop - 1.5 1.8 V Pf=3mW, CWSlope Efficiency η 0.1 - 0.17 W/A CW, Tc=-20°C0.08 - 0.15 CW, Tc=25°C0.05 - - CW, Tc=85°CPeak Wavelength λ 1300 1310 1320 nm Pf=3mW, CWWavelength Temperature ∆λ - 0.08 nm/°C CW, -20°C-85°CCoefficientlmSide-Mode Suppression Ratio SMSR 35 - - dB Pf=3 mW, CWSpectral Width ∆λ - 1 nm -20 dBMonitor Current Im -0.1 - - mA Vrpd=5 V, Pf=3 mWMonitor Dark Current lmd - - 0.1 µA Vrpd=5 VLD Series Resistance Rld 4 - 8Tracking Error 1 TE -1 - 1 dB Tc=25-85°C3rd Order Intermodulation IMD3 - - -55 dBcDistortion 2Relative Intensity Noise RlN - - -150 dB/Hz Pf=3 mW, CW, f=1.8 GHzOptical isolation Iso 30 - - dBNote 1: CW, Pf(25°C)=3mW , TE=10log(Pf(Tc)/Pf(25°C))Note 2: CW, 2 tone, RF input Power=0dBm, f1=1.8G, f2=1.802GHz6

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Limit Values UnitMin MaxLight Output Po 7 mWLD Reverse Voltage Vrld 2 VPD Reverse Voltage Vrpd 20 VOperating Temperature Topr -20 85 °CStorage Temperature Tstg -40 85 °CSoldering Temperature Tsol 260 °CCOAX productsOrdering InformationML - COAX - 1310 - DFB - AL - 3 - X- X- -A1Connector Pin layout 1SP = SC/PC 1SA = SC/APC 2FP = FC/PC 3FA = FC/APCN = no connector1Please see pin layoutsExample: ML-COAX-1310-DFB-AL-3-SP-1-A1Coaxially pigtailed 1310 nm DFB module for analogue applications, 3 mW power level,SC/PC connector, pin layout 1, with optical isolator7

ML-COAX-1550-FP-AL-31550 nm Coaxial Fiber Pigtailed FP Laserfor Analog ApplicationsApplications• RF over fiber• Wireless repeatersFeatures• Fiber Pigtailed Coaxial 1550nm Laser Diode Module• Multi-quantum Well Active Region Fabry-Perot Laser Diode• Low Threshold Current, High Output Power• With Optical Isolator• InGaAs/InP Monitor Photodiode at Rear Mirror• 4-pin Coaxial Package Pigtailed with 500-1000mm long SM fiberElectro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test ConditionThreshold Current Ith - 10 20 mAOperating Current Iop - 40 60 mA Pop=3mW, CWOptical Output Power Pop 2 3 - mW Iop=Ith+30mAOperating Voltage Vop - 1.2 1.8 V Pop=3mW, CWSlope Efficiency η 0.1 - 0.17 W/A Tc= -20 C0.09 - 0.15 W/A Tc=+25 C0.055 - - W/A Tc=+85 CCentral Wavelength λ 1520 1550 1580 nm Pop=3mW, CWSpectral Width ∆λ - - 4 RMS, CWMonitor Current lm 0.1 - - mA Pop=3mW, Vrpd=5VMonitor Dark Current lmd - - 0.1 µA Vrpd=5VLD Series Resistance Rs 4 - 8 ΩTracking Error TE -1.0 - 1.0 dB Tc=25 C-85 C, CW3rd Order Intermodulation Distortion IMD3 - - dBc CW1Relative Intensity Noise RIN - -50 - dB/Hz Pop=3mW, CW, f=1.8GOptical isolation Iso 30 -150 -Note 1: Two tone, RF input power=0dBm, f1=1.8GHz, f2=1.802GHz8

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Limit Values UnitMin MaxOptical Output Power Pop 7 mWLD Reverse Voltage Vrld 2 VPD Reverse Voltage Vrpd 20 VOperating Temperature Topr -20 +85 °CStorage Temperature Tstg -40 +85 °CSoldering Temperature Tsol 260 1 °CCOAX productsNote 1: Soldering time below 10 seconds applied for the can leadMechanical SpecificationOrdering InformationML - COAX - 1550 - FP - AL - 3 - X- -2- XConnectorIsolatorSP = SC/PCA1 = without isolatorSA = SC/APCA2 = with isolatorFP = FC/PCFA = FC/APCN = no connectorExample: ML-COAX-1550-FP-AL-3-SP-2-A2Coaxially pigtailed 1550 nm Fabry-Perot module for analogue applications,3 mW typical power level, SC/PC connector, pin layout 2, with optical isolator9

ML-COAX-1550-DFB-AL-31550 nm Coaxial Fiber Pigtailed DFB Laserfor Analog ApplicationsApplications• RF over fiber• Hybrid Fiber Coax (HFC) networks• Wireless repeatersFeatures• Fiber Pigtailed Coaxial 1550nm Laser Diode Module• Multi-quantum Well Active Region DFP Laser Diode• Low Threshold Current, High Output Power• With Optical Isolator• InGaAs/InP Monitor Photodiode at Rear Mirror• 4-pin Coaxial Package Pigtailed with 500-1000mm long SM fiberElectro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test ConditionThreshold Current Ith - 7 11 mAOperating Current Iop - 40 60 mA Pop=3mW, CWOptical Output Power Pop 2 3 - mW Iop=Ith+30mAOperating Voltage Vop - 1.5 1.8 V Pop=3mW, CWSlope Efficiency η 0.1 - 0.17 W/A Tc= -20°C0.09 - 0.15 W/A Tc=+25°C0.055 - - W/A Tc=+85°CCentral Wavelength λ 1540 1550 1560 nm Pop=3mW, CWWavelength Temperature Coefficient ∆λ - 0.08 - nm/°C CW, -20°C - +85°CSide Mode Suppression Ratio SMSR 35 - dB Pop=3mW, CWSpectral Width ∆λT - - 1 -20dBMonitor Current Im 0.1 - - mA Pop=3mW, Vrpd=5VMonitor Dark Current Imd - - 0.1 µA Vrpd=5VLD Series Resistance Rs 4 - 8 ΩTracking Error TE -1.0 - 1.0 dB TCW3rd Order3 rd Order Intermodulation Distortion IMD3 - - -55 dBc CW1Relative Intensity Noise RIN - -155 - dB/Hz Pop=3mW, CW, f=1.8GOptical isolation Iso 30Note 1: Two tone, RF input power=0dBm, f1=1.8GHz, f2=1.802GHz10

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Limit Values UnitMin MaxOptical Output Power Pop 7 mWLD Reverse Voltage Vrld 2 VPD Reverse Voltage Vrpd 20 VOperating Temperature Top -20 +85 °CStorage Temperature Tstg -40 +85 °CSoldering Temperature Tsol 260 1 °CCOAX productsNote 1: Soldering time below 10 seconds applied for the can leadMechanical SpecificationOrdering InformationML - COAX - 1550 - DFB - AL - 3 - X -2 -A1ConnectorSP = SC/PCSA = SC/APCFP = FC/PCFA = FC/APCN = no connectorExample: ML-COAX-1550-DFP-AL-3-SP-2-A1Coaxially pigtailed 1550 nm DFB module for analogue applications,3 mW typical power level, SC/PC connector, pin layout 2, with optical isolator11

Cable televisionHybrid Fibre Coax (HFC), that incorporates bothfiber optic transmission components and coppercoaxial transmission components is a way ofdelivering video, voice telephony, data, and otherinteractive services over coaxial and fiber opticcables.The HFC network (figure) consists of networkinterface units, fiber nodes, distribution center,and head-end office. The network allows installationof an optical fiber from the cable head-end toserve the distribution center and particular fibernode, in which the optical signal is converted toelectrical signals. The electrical signal is redistributedusing coaxial cable to the subscriber’spremises, where network interface units distributethe signal to different devices. Such network withreturn channel, offers the subscriber a cost-effectiveservice upon demand with high speed.In CATV, for which HFC was originally designed,the AM-modulated data is setting strict requirementsfor the network linearity and noise properties.This requirement on the other hand favoursthe fiber optic transmission path, but at the sametime places stringent requirements on the fiberoptic transmitter i.e. laser module linearity andnoise properties.The relative intensity noise (RIN) is playing a keyrole in Carrier-to-Noise (CNR) performance of thefiber optic link, especially in short transmissiondistances at 1310nm. The RIN of Modulight’spigtailed laser module series designed specificallyfor analogue applications is of the order of150dBc/Hz and 145dBc/Hz, for Distributed Feedbackand Fabry-Perot lasers, respectively.In addition, the analog video signal is also quitesensitive to nonlinearity in the form of intermodulationdistortion. The distortion spectrum containsmany discrete lines deteriorating sensitive analogsignals. Very tight linearity criteria are used indesigning the HFC systems and extra attentionis paid for the optical transmitter distortion, butalso for distortion of the RF cascade. Modulight’spigtailed laser module series designed specificallyfor analogue applications is characterized againstthe stringent intermodulation distortion requirementsof the CATV transmission networks.12

Value adding solutions to optical applicationsML-COAX-1310-FP-2G5-21310 nm 2.5 Gbps Coaxial Fiber Pigtailed FP LaserApplicationsFeatures• High speed optical fiber communication • Low threshold current• Short and intermediate reach• Narrow spectral linewidth• SONET OC-48 systems• Low voltage and differential resistance• SDH STM-16 systems• Un-cooled MQW active region laser diode• Reliable single transverse mode emission• Monitor photodiode at rear mirror• 4-pin coaxial package with SM pigtail• With and without optical isolatorCOAX productsElectro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test ConditionThreshold Current Ith - 11 18 mA 25°COperating Current Iop - 35 45 mA 25°C, Pf=3mW50 70 mA 85°C, Pf=3mWOptical Output Pf - 2 3 mW 25°C, Iop=Ith+26mAOperating Voltage Vop - 1.2 1.5 V 25°C, Iop=Ith+26mASlope Efficiency η 0.08 0.12 - W/A 25°CPeak Wavelength λ 1270 1310 1340 nm 0°C-85°C, Pf=3mWSpectral Width (RMS) λ - 0.85 2 nm 25°C, Pf=3mWTemperature shift or wavelenght λ/T - 0.46 - nm/K 0°C-85°C, Pf=3mWMonitor Current lm 0.4 0.8 mA 25°C, Pf=3mWMonitor Dark Current lmd - - 1100 nA VRPD=10VAbsolute Maximum RatingsParameter Symbol Limit Values UnitMin MaxOptical Output Pf 4 mWLD Reverse Voltage Vrld2 2 VPD Reverse Voltage Vrpd 10 VOperating Temperature Topr -20 85 °CStorage Temperature Tstg -40 85 °CSoldering Temperature Tsol 260 °C13

FlangeProduct DataPin Layout (bottom view)Ordering InformationML - COAX - 1310 - FP - 2G5 - 2 - X- X- XConnector Pin layout VersionSP = SC/PC 1 A1 = no isolatorSA = SC/APC 2 A2 = optical isolatorFP = FC/PC 3FA = FC/APC 4N = no connectorExample: ML-COAX-1310-FP-2G5-2-SP-1-A2Coaxial fiber pigtailed 1310 nm FP module for 2.5 Gbps transmission, 2 mWtypical power level, SC/PC connector, pin layout 1, with optical isolator14

Value adding solutions to optical applicationsML-COAX-X-DFB-2G5-X-X-22.5 Gb/s DFB Laser Module For CWDMApplications• 2.5 Gb/s long haul coarse WDM• Hybrid Fiber Coax (HFC) networks• Video surveillanceCOAX productsFeatures• Coaxially packaged laser diode module with SM fiber• 8 wavelength channels following ITU G.694.2 CWDM wavelength grid• For 2 mW and 3 mW typical fiber output power level• MQW Distributed Feedback (DFB) laser diode with 500mm SM fiber pigtail• InGaAs/InP monitor photodiode at rear mirror• Optical isolatorElectro-Optical Characteristics (TC=25°C)Parameter Symbol Min Typ Max Unit Test ConditionThreshold Current Ith - 11 20 mA Start, End=30mA (Step 0.5mA),2 Points extrapolation)Operating Current Iop - - 60 mA CW, PF=2mWLD Forward Voltage Vlop - - 1.8 V CW, PF=2mWSlope efficiency η 0.07 - - W/A CW, PF=2mWCentral wavelenght ∆c - * - nmSpectral Width ∆λ - 0.8 1.0 nm -20dBSide Mode Suppression Ratio SMSR 30 - - dB CW, PF=2mWRise / Fall time tr/tf - - 0.15 ns I=Ith, 20-80%Monitor Current Im 100 - - µA VRPD=5VMonitor Dark Current Id - - 100 nA VRPD=5VTracking Error TE -1.0 - +1.0 dB 25-70 CIsolation Iso 30 - - dBOutput power specification (TC=25 °C)Parameter Symbol Min Typ Max Unit Test ConditionOptical Power PF 1.4(2) 2(3) - mW l=lth+20mAThe output power level for the high power variant of the module is indicated in parenthesis15

Wavelength specification(nm, CW with PF=2 mW, TC=25°C)Part number Min Typ MaxML-COAX-1470-DFB-2G5-2-X-2-B1 1467 1470 1473ML-COAX-1490-DFB-2G5-2-X-2-B1 1487 1490 1493ML-COAX-1510-DFB-2G5-2-X-2-B1 1507 1510 1513ML-COAX-1530-DFB-2G5-2-X-2-B1 1527 1530 1533ML-COAX-1550-DFB-2G5-2-X-2-B1 1547 1550 1553ML-COAX-1570-DFB-2G5-2-X-2-B1 1567 1570 1573ML-COAX-1590-DFB-2G5-2-X-2-B1 1587 1590 1593ML-COAX-1610-DFB-2G5-2-X-2-B1 1607 1610 1613Mechanical SpecificationOrdering InformationML - COAX - X -DFB - 2G5 - X - X -2 -B1Wavelength Power Output Connector1470 2=2mW SP=SC/PC1490 3=3mW SA=SC/APC1510 FP=FC/PC1530 FA=FC/APC1550 N=No connector157015901610Example: ML-COAX-1550-DFB-2G5-2-SP-2-B1Coaxial fiber pigtailed 1550 nm DFB module with 2mW typical output power and with optical isolator for 2.5 Gbpstransmission, SC/PC connector.16

Value adding solutions to optical applicationsML-T-1310-FP-2G51310 nm FP Laser Diode for 1.25 Gb/s and 2.5 Gb/sOverviewReliable 1310 nm FP laser diode with narrow spectral linewidthin 5.6 mm TO-can for digital optical communicationnetworks with up to 2.5 Gb/s speeds. Product is availablewith flat window cap, ball lens cap or a specially designedlow-profile cap with only 4.05 mm height and aspheric lensfor high single-mode fiber coupling efficiency.COAX TO-can productsElectro-Optical Characteristics 1,2Parameter Symbol Min Typ Max Unit Test ConditionRated optical power 3 PR 7 - - mW -40-85°CThreshold current 4 Ith - 9 18 mA 25°C- 20 - 85°COperating current Iop - 21 [23] 32 [35] mA 25°C, Pop=5 mW- 37 [39] - 85°C, Pop=5 mWOperating voltage Vop - 1.1 1.6 V -40-85°C, Pop=5 mWSerial resistance 5 Rs - 6 - Ω 25°C, Pop=5 mWSlope efficiency 5 η 0.30 [0.2] 0.40 [0.34] W/A 25°C, Pop=5 mW- 0.29 [0.25] - 85°C, Pop=5 mWCentral wavelength ∆c 1290 1310 1330 nm 25°C, Pop=5 mW1260 - 1355 -40-85°C, Pop=5 mWSpectral width 6 ∆λ - 0.85 2 nm 25°C, Pop=5 mWTemperature shift of wavelength ∂λ/∂T - 0.46 - nm/K -40-85°C, Pop=5 mWPerpendicular beam θ⊥ - 38 [9] - deg 25°C, Pop=5 mWdivergence angle (FWHM) 7Parallel beam divergence θ|| - 21 [8.2] - deg 25°C, Pop=5 mWangle (FWHM) 7Modulation bandwidth f-3dB 6 7.5 - GHz 25°C, Iop=Ith+16 mA4 5 - 85°C, Iop=Ith+16 mAMonitor current Im 200 [300] 400 [500] 600 [700] µA 25°C, Pop=5 mWMonitor dark current Id - 0.1 1.0 µA 25°C ,VRPD=5 VMonitor capacitance Cm - 5 10 pF f=1 MHz, VRPD=5 VTracking error γ -1 - 1 dB Im=constant, Po=5mW@25°CFocal length 8 Df [6.00] (3.87) [6.10] (3.97) [6.20] (4.07) mm 25°C, Pop=5 mWFiber coupling efficiency - [12] (45) - % Single-mode fiberNote 1: All temperatures refer to case temperature, Tc, Note 2: Where indicated, values in brackets [ ] apply for ball lens cap type,values in parenthsis ( ) apply for aspheric lens cap type, Note 3: Kink-free, demonstrated reliability, Note 4: 2nd derivative method,Note 5: PLO=1 mW, PHI=7 mW, Note 6: RMS, -20 dB, Note 7: Full Width at Half Maximum, Note 8: Distance from reference plane(see mechanical specification) to focal point. Applicable to ball lens cap and aspheric lens cap types only.17

Absolute maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAPD reverse voltage VRPD 20 VPD forward current IFPD 10 mALead soldering temperature (

Value adding solutions to optical applicationsOptical Time Domain ReflectometerOptical Time Domain Reflectometer (OTDR) isused for the characterization of optical fibers. Inan OTDR device a light pulse generated by a laserdiode is coupled into a fiber. The light pulse travelsin the fiber and experiences reflections fromdefects, splices and connectors. The reflectedlight signal is directed to a sensitive photodetector,which is suitable for detecting the light emitted bythe laser diode. As the speed at which the lightpropagates in the fiber is known as well as thetime when the light pulse is sent into the fiber,the distance that the pulse has traveled can becalculated giving the position of defects in the fiberas well as the length of fiber. The received OTDRsignal trace is plotted on a logarithmic as a functionof distance (see Figure 1 B). The slope of thecurve gives the attenuation of the fiber, while localdeviations from the linear trend indicate defects orsplices or connector positions.In addition to fiber characterization, OTDR canalso be used for sensing chemicals and gasesas certain substances cause changes to the lightguiding properties of the fiber and those can beobserved as changes in the measurement curve.OTDR lasers are Fabry-Pérot lasers that commonlyoperate at 1310 nm, 1550 nm and 1625nm wavelengths. As only a small fraction ofpropagating light is reflected back to the detectorforming a trace signal, for a good measurement asufficient amount of light needs be fiber-coupled.To meet this requirement, the laser has to achievepeak optical output power of a couple of hundredsmW. Furthermore, as OTDR devices are mainlyused for the characterization of the single modefibers, the output laser beam must also be singlemode in order to obtain good enough fiber couplingefficiency.By widening the pulse the amount of light reflectedback can also be increased. However, asthe pulse width is increased, the resolution isworsened since the pulse width sets the minimumdistance between two observable features. In anOTDR system pulse widths from 5 m to 500 m (25ns to 25 µs in time) are typically used.COAX TO-can productsAn OTDR componentsetup and B) an exampleof an OTDR measurementcurve.Examples of singlemodelight power vs.current curve andemission spectrum forModulight’s high-power1310 nm diode inpulsed mode.19

ML-T-1310-DFB-2G51310 nm DFB Laser Diode for 1.25 Gb/s and 2.5 Gb/sOverviewModulight's ML-T-1310-DFB-2G5 series are high-performanceDistributed Feedback (DFB) laser diodes in5.6 mm TO-cans. The lasers emit at 1310 nm wavelength.Laser diode emission wavelength is controlledby an internal grating. The can package includes highqualityInGaAs monitor photodiode for feedback loop.ML-T-1310-DFB-2G5 series have been designed fordigital optical communication networks with up to 4Gb/s modulation speeds. Product is available with flatwindow cap or a specially designed low-profile asphericlens cap for higher fiber coupling efficiency with only4.05 mm height.Electro-Optical Characteristics 1Parameter Symbol Min Typ Max Unit Test ConditionRated optical power 2 PR 7 - - mW 0-85°CThreshold current 3 Ith - 15 25 mA 25°C- 25 45 85°COperating current Iop - 32 45 mA 25°C, Pop=5 mW- 42 70 85°C, Pop=5 mWOperating voltage Vop - 1.15 1.4 V 0-85°C, Pop=5 mWSerial resistance 4 Rs - 6 - Ω 25°C, Pop=5 mWSlope efficiency 4 η 0.20 0.33 - W/A 25°C, Pop=5 mW- 0.28 - 85°C, Pop=5 mWCentral wavelength λc 1287 1310 1327 nm 25°C, Pop=5 mW1280 - 1335 0-85°C, Pop=5 mWSpectral width 5 ∆λ - 0.07 0.2 nm 25°C, Pop=5 mWSide Mode Suppression Ratio 6 SMSR 30 43 - dB 0-85°C, Pop=5 mWTemperature shift of wavelength ∂λ/∂T - 0.09 - nm/K 0-85°C, Pop=5 mWPerpendicular beam θ⊥ - 35 - deg 25°C, Pop=5 mWdivergence angle (FWHM) 7Parallel beam divergence θ|| - 27 - deg 25°C, Pop=5 mWangle (FWHM) 7Modulation bandwidth f-3dB 6 - - GHz 25°C, Iop=Ith+16 mA4 - - 85°C, Iop=Ith+16 mAMonitor current Im 50 200 1000 µA 25°C, Pop=5 mWMonitor dark current Id - 0.1 1.0 µA 25°C, VRPD=5 VMonitor capacitance Cm - 5 10 pF f=1 MHz, VRPD=5 VFocal length 8 Df 3.85 3.95 4.05 mm 25°C, Pop=5 mWFiber coupling efficiency 8 - 40 - % 25°C, Pop=5 mWNote 1: All temperatures refer to case temperature, Tc, Note 2: Kink-free, demonstrated reliability, Note 3: 2nd derivative method,Note 4: PLO=1 mW, P HI=7 mW, Note 5: RMS, -20 dB, Note 6, -20 dB, Note 7, Full Width at Half Maximum, applicableto flat window cap type only, Note 8, Distance from reference plane (see mechanical specification) to focal point. Applicable toaspheric lens cap type only.20

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAPD reverse voltage VRPD 20 VPD forward current IFPD 10 mALead soldering temperature (

ML-T-1430-FP-1G1430 nm FP Laser Diode for 1 Gb/sOverviewModulight's ML-1430-T-FP-1G series are highperformanceFabry-Pérot (FP) laser diodesin 5.6 mm TO-cans. The lasers emit singletransverse mode at 1430 nm wavelength. Thehermetic TO-can package includes an InGaAsmonitor photodiode for feedback loop.Electro-Optical Characteristics 1,2Parameter Symbol Min Typ Max Unit Test ConditionRated optical power 3 PR 3 - - mW -40-60°CThreshold current 4 Ith - 12 18 mA 25°C- 19 33 60°COperating current Iop - 21 [23] 40 mA 25°C, Pop=3 mW- 29 [32] 60 60°C, Pop=3 mWOperating voltage Vop - 1.1 1.6 V 25°C, Pop=3 mWSerial resistance 5 Rs - 6 - Ω 25°C, Pop=3 mWSlope efficiency 5 η 0.16 0.32 [0.27] - W/A 25°C, Pop=3 mW0.12 0.29 [0.24] - 60°C, Pop=3 mWCentral wavelength λc 1420 1430 1450 nm 25°C, Pop=3 mW1400 - 1470 -40-60°C, Pop=3 mWSpectral width 6 ∆λ - 0.9 4 nm 25°C, Pop=3 mWTemperature shift of wavelength ∂λ/∂T - 0.50 - nm/K -40-60°C, Pop=3 mWPerpendicular beam θ⊥ - 36 [10] - deg 25°C, Pop=3 mWdivergence angle (FWHM)7Parallel beam divergence θ|| - 21 [10] - deg 25°C, Pop=3 mWangle (FWHM) 7Modulation bandwidth f-3dB 4 7 - GHz 25°C, Iop=Ith+16 mA2 6 - 60°C, Iop=Ith+16 mAResonance frequency fr - 5 - GHz 25°C, Iop=Ith+16 mA- 4 - 60°C, Iop=Ith+16 mAMonitor current Im 100 250 [300] 700 µA 25°C, Pop=3 mWMonitor dark current Id - 0.1 1.0 µA 25°C, VRPD=5 VMonitor capacitance Cm - 5 10 pF f=1 MHz, VRPD=5 VTracking error γ -1 - 1 dB Im=constant,Po=3 mW@25°CFocal length 8 Df - [5.95] - mm 25°C, Pop=3 mWFiber coupling efficiency - [7.5] - % Single-mode fiberNote 1: All temperatures refer to case temperature, Tc, Note 2: Where indicated, values in brackets [ ] apply for ball lens captype, Note 3: Kink-free, demonstrated reliability, Note 4: 2nd derivative method, Note 5: PLO=1 mW; PHI=3 mW, Note 6:RMS, -20 dB, Note 7: Full Width at Half Maximum, Note 8: Distance from reference plane (see mechanical specification) tofocal point. Applicable to ball lens cap type only.22

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 150 mAPD reverse voltage VRPD 20 VPD forward current IFPD 10 mALead soldering temperature (

ML-T-1490-DFB-2G51490 nm DFB Laser Diode for 1.25 Gb/s and 2.5 Gb/sOverviewModulight's ML-1490-T-DFB-2G5 series are high-performanceDistributed Feedback (DFB) laser diodes in 5.6mm TO-can. The lasers emit single longitudinal mode at1490 nm wavelength. Laser diode emission wavelength iscontrolled by an internal grating. The can package includesan InGaAs monitor photodiode for feedback loop.ML-1490-T-DFB-2G5 series have been especially designedfor digital optical communication in passive opticalnetworks (PON) with up to 3.125 Gb/s modulation speeds.Products are available in two power variants with eithera flat window cap or a specially designed low-profile capwith aspheric lens for higher single-mode fiber couplingefficiency and smaller footprint in demanding small formfactor transceiver applications.Electro-Optical Characteristics 1,2Parameter Symbol Min Typ Max Unit Test ConditionRated optical power 3 PR 6/10 - - mW 0-70°CThreshold current 4 Ith - 18 30 mA 25°C- 35 - 70°COperating current Iop - 38 50 mA 25°C, Pop=5 mW- 65 - 70°C, Pop=5 mWOperating voltage Vop - 1.2 1.6 V 0-70°C, Pop=5 mWSerial resistance 5 Rs - 6 - Ω 25°C, Pop=5 mWSlope efficiency 5 η 0.17 0.26 - W/A 25°C, Pop=5 mW- 0.16 - 70°C, Pop=5 mWCentral wavelength λc 1487 1490 1493 nm 25°C, Pop=5 mW1482 - 1498 0-70°C, Pop=5 mWSpectral width 6 ∆λ - 0.11 0.2 nm 25°C, Pop=5 mW- 0.07 0.2 70°C, Pop=5 mWSide Mode Suppression Ratio 7 SMSR 30 40 - dB 0-70°C, Pop=5 mWTemperature shift of wavelength ∂λ/∂Τ - 0.11 - nm/K 0-70°C, Pop=5 mWPerpendicular beam θ⊥ - 45 - deg 25°C, Pop=5 mWdivergence angle (FWHM) 8Parallel beam divergence θ|| - 26 - deg 25°C, Pop=5 mWangle (FWHM) 8Modulation bandwidth f-3dB 6 - - GHz 25°C, Iop=Ith+16 mA4 - - 70°C, Iop=Ith+16 mAMonitor current Im 40 100 700 µA 25°C, Pop=5 mWMonitor dark current Id - 0.1 1.0 µA 25°C, VRPD=5 VMonitor capacitance Cm - 5 10 pF f=1 MHz, VRPD=5 VTracking error γ -1 - 1 dB Im=constant,Po=5mW@25°CFocal length 9 Df (3.77) (3.87) (3.97) mm 25°C, Pop=5 mWFiber coupling efficiency - (35) - % 25°C, Pop=5 mW,aspheric lens cap type24

Value adding solutions to optical applicationsNote 1: All temperatures refer to case temperature, Tc, Note 2: Where indicated, values in paranthesis apply for asphericlens cap type, Note 3: Kink-free, demonstrated reliability, Note 4: 2nd derivative method, Note 5: PLO=1 mW, PHI=7 mW,Note 6: RMS, -20 dB, Note 7: -20 dB, Note 8: Full Width at Half Maximum, applicable to flat window cap type only, Note 9:Distance from reference plane (see mechanical specification) to focal point. Applicable to aspheric lens cap type only.Absolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAPD reverse voltage VRPD 20 VPD forward current IFPD 10 mALead soldering temperature (

ML-T-1550-FP-2G51550 nm FP Laser Diode for 1.25 Gb/s and 2.5 Gb/sOverviewModulight's ML-1550-T-FP-2G5 series are high-performanceFabry-Pérot (FP) laser diodes in 5.6 mm TOcans.The lasers emit single transverse mode at 1550nm wavelength. The can package includes an InGaAsmonitor photodiode for feedback loop.ML-1550-T-FP-2G5 series have been designed fordigital optical communication networks with up to 2.5Gb/s modulation speeds. Products are available withflat window cap or with ball lens cap for higher singlemodefiber coupling efficiency.Electro-Optical Characteristics 1,2Parameter Symbol Min Typ Max Unit Test ConditionRated optical power 3 PR 5 - - mW -40-85°CThreshold current 4 Ith - 10 15 mA 25°C- 23 - 85°COperating current Iop - 28 [30] 35 [42] mA 25°C, Pop=5 mW- 48 [52] - 85°C, Pop=5 mWOperating voltage Vop - 1.15 1.5 V -40-85°C, Pop=5 mWSerial resistance 5 Rs - 8 - Ω 25°C, Pop=5 mWSlope efficiency 5 η 0.22 [0.2] 0.29 [0.25] - W/A 25°C, Pop=5 mW- 0.19 [0.16] - 85°C, Pop=5 mWCentral wavelength λc 1530 1550 1570 nm 25°C, Pop=5 mW1485 - 1610 -40-85°C, Pop=5 mWSpectral width 6 ∆λ - 1.3 2.5 nm 25°C, Pop=5 mWTemperature shift of wavelength ∂λ/∂T - 0.65 - nm/K -40-85°C, Pop=5 mWPerpendicular beam θ⊥ - 44 [10] - deg 25°C, Pop=5 mWdivergence angle (FWHM) 7Parallel beam divergence θ|| - 23 [10] - deg 25°C, Pop=5 mWangle (FWHM) 7Modulation bandwidth f-3dB 6 - - GHz 25°C, Iop=Ith+16 mA4 - - 85°C, Iop=Ith+16 mAMonitor current Im 150 [200] 300 [400] 600 [700] µA 25°C, Pop=5 mWMonitor dark current Id - 0.1 1.0 µA 25°C ,VRPD=5 VMonitor capacitance Cm - 5 10 pF f=1 MHz, VRPD=5 VTracking error γ -1 - 1 dB Im=constant,Po=5mW@25°CFocal length 8 Df [5.87] mm 25°C, Pop=5 mWFiber coupling efficiency [10.3] % Single-mode fiberNote 1: All temperatures refer to case temperature, Tc, Note 2: Where indicated, values in brackets [ ] apply for ball lens captype , Note 3: Kink-free, demonstrated reliability, Note 4: 2nd derivative method, Note 5: PLO=1 mW, PHI,=3 mW, Note 6:RMS, -20 dB, Note 7: Full Width at Half Maximum, Note 8: Distance from reference plane (see mechanical specification) tofocal point. Applicable to ball lens cap type only.26

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAPD reverse voltage VRPD 20 VPD forward current IFPD 10 mALead soldering temperature (

ML-C-1310-FP-2G5-E11310 nm Fabry-Pérot Laser Diode Chip for 1.25 Gb/s & 2.5 Gb/sDescriptionLaser chip with Modulight's high-performance RWGdesign. The excellent high temperature behaviorof the chip makes it suitable for low-cost uncooledshort and intermediate reach applications in accessand enterprise networks. The products are shippedas bare dies.Applications• Gigabit Ethernet transceivers

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 30 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAOperating temperature Top -40-85 °CStorage temperature TS -40-85 °CBare die productsChip layout and typical characteristicsAll dimensions in microns.Chip thickness: 100 µm.Polarity: p-contact (anode) up.29

ML-C-1310-FP-2G5-E11310 nm Fabry-Pérot Laser Diode Chip for 1.25 Gb/s & 2.5 Gb/s30

Bare die productsValue adding solutions to optical applicationsOrdering InformationML - C - 1310 - FP - 2G5 - E131

ML-C-1310-DFB-2G5-D11310 nm DFB Laser Diode Chip for 1.25 Gb/s and 2.5 Gb/sDescription1310 nm DFB (Distributed Feedback) laser chip withexcellent high temperature performance, designedfor intermediate and long reach optical transceiversup to 2.5 Gb/s data rates. Wavelength selection andstabilization are done by a built-in optical grating.Applications• Intermediate and long reach high-speed opticalfiber communication• Gigabit Ethernet transceivers (1.25G, 1000BASE-BX-20-U)• 1x/2x Fibre Channel (1.06G / 2.125G)• SONET OC-48• SDH STM-S-16.1 >15 kmElectro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test Condition1Rated optical power Po 7 - - mW 0-85°CThreshold current Ith - 12 18 mA 25°C- 24 40 85°COperating current Iop - 26 40 mA 25°C, Po=5 mW- 42 65 85°C, Po=5 mWOperating voltage Vop - 1.15 1.3 V 25°C, Po=5 mWSlope efficiency η 0.22 0.38 - W/A 25°C, Po=5 mW0.15 0.28 - 85°C, Po=5 mWCentral wavelength λc 1287 1307 1327 nm 25°C, Po=5 mW1280 - 1335 0-85°C, Po=5 mWSpectral width (FWHM) 2 ∆λ - 0.07 0.2 nm 25°C, Po=5 mWSide mode supression ratio (SMSR) SMSR 35 43 - dB 25°C, Po=5 mWTemperature shift of wavelength ∂λ/∂T - 0.09 - nm/K 0-85°C, Po=5 mWPerpendicular beam divergence angle θ⊥ - 35 45 deg 25°C, Po=5 mWParallel beam divergence angle θ|| - 27 35 deg 25°C, Po=5 mWModulation bandwidth 3 f-3dB 5 - - GHz 25°C, Iop=Ith+16 mA4 - - 85°C, Iop=Ith+16 mANote 1: All temperatures refer to heatsink temperatureNote 2: -20 dB noise floorNote 3: Chip-on-carrier, ground-signal-ground microwave probe32

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAOperating temperature (4) Top 0-85 °CStorage temperature TS -40-85 °CChip layout and typical characteristicsBare die productsAll dimensions in microns.Chip thickness: 100 µm.Polarity: p-contact (anode) up.33

10 Gb/s Ethernet over multimode fiberEver-increasing bandwidth demand due to bandwidth-hungryhigh-performance applications hasmade more and more network managers requestcost-efficient network solutions from their networkingequipment suppliers for upgrading theirenterprise LAN backbones to10 Gb/s.Modulight’s 1310 nm 10 Gb/sFabry-Pérot laser dies are usedto overcome this problem.A vast majority of the installedfiber connections in the enterprisedata centers consists of veryshort-reachlegacy fiber cableconnections, with 62.5 µm fibercore diameter. This multimodefiber, originally installed for FiberOptic Distributed Data Interface(FDDI) applications, is capableof handling 1-2 Gb/s. It becomes a problem at 10Gb/s, where differential mode dispersion leadsinto distorted signals, and unclear and incompletedata transmission. Replacing the fiber withsingle-mode fiber or higher-performance multimodefiber with 50 µm core diameter is generallynot a favored solution, since it requires expensivefiber assembly work and may cause majorchanges in other network hardware, as well.One solution for transmitting data at 10 Gb/sover multimode fiber is the LX4 optical interface,defined in the IEEE’s original 10 Gb Ethernetstandard. In this approach, four DFB laser diodesoperate at different wavelengths with 3.125Gb/s signalling speed each. Individual signalchannels, separated by 24.8 nm, are coupledinto the same transmission fiber using a opticalmultiplexer, and at the receiving end they areagain separated using an optical demultiplexerbefore going to the four pin-TIA detectors.LX4 approach, although existing for years, hasnot been widely adopted in the fiber opticsindustry. Main reason for this is the high modulecost, inherent to the technology using 4 DFBlasers at different wavelengths, 4 laser drivers, 4detectors, MUX and DeMUX/each link. Of course,the parallel operation at 3.125 Gb/s allowsuse of lower-performance electronics as a serial10 Gb/s option, but the decreasing prices of 10Gb/s electronics are reducing the significance ofthis initial advantage.Despite recent developments for lower-cost LX4modules, high module prices have increasedpressure to set an IEEE optical interface standardfor low-cost serial sources. IEEE 802.3aqstudy group has already published the first draftfor the serial optical interface 10GBASE-LRM,which utilizes EDC to overcome the problemsrelated to multimode fiber.In this 10 Gb/s multimode application, Modulight’sFP lasers can be used to obtain significant componentcost reduction. A high-end solution forrealizing the 10GBASE-LRM optical interfacewould is to use 10 Gb/s DFB laser at 1310 nm,as you would use for the single-mode interface10GBASE-LR for 2-10 km links. A lower-costsolution is to use FP lasers. Not only is the laserdie cost lower, but also assembly of the FP diesis significantly cheaper. Bonding-induced stresseasily detoriates DFB mode behaviour, thusdecreasing yield, and DFBs’ sensitivity to backreflections makes use of an expensive opticalisolator obligatory.EDC is abbreviation for Electronic DispersionCompensation, an advanced adaptive signalprocessing technology to compensate for thedistortions in the optical transmission path. EDCchips use advanced and low-cost CMOS silicontechnology. The EDC chip is built into the opticaltransceiver together with the high-speed transmitteroptical subassembly (TOSA) containingthe laser and monitor photodiode, laser driver,receiver optical subassembly (ROSA), transimpedanceamplifier, and clock and data recoverycircuitry. Latest EDC chips integrate EDC withclock and data recovery functions. Number ofoptical components is dropped significantly fromthat required for LX4 transceiver.34

Value adding solutions to optical applicationsML-C-1310-FP-10G-A11310 nm Fabry-Pérot Laser Diode Chip for 10 Gb/sDescriptionLaser chip with Modulight's high-performance RWGdesign. The excellent high temperature behaviorand narrow spectral linewidth of the chip make itsuitable for uncooled transceivers for 10 Gb/s serialinterfaces. The products are shipped as bare dies.Features• Narrow spectral linewidth• Low threshold current• Excellent high temperature performance• MQW active layer• Stable single transverse mode emissionApplications• 10 Gb/s optical data links• 10GBASE-LRM• OC-192 VSR (

Absolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 10 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAOperating temperature Top 0-85 °CStorage temperature TS -40-85 °CChip layout and typical characteristicsAll dimensions in microns.Chip thickness: 100 µm.Polarity: p-contact (anode) up.36

Value adding solutions to optical applicationsML-C-1310-FP-10G-A11310 nm Fabry-Pérot Laser Diode Chip for 10 Gb/sBare die products37

Ordering InformationML - C - 1310 - FP - 10G - A138

Value adding solutions to optical applicationsML-C-1490-DFB-2G5-X1490 nm DFB Laser Diode Chip for 1.25 Gb/s and 2.5 Gb/sOverviewModulight's ML-C-1490-DFB-2G5-X is a high-performanceDistributed Feedback (DFB) laser diodechip. The laser emits at 1490 nm wavelength. Laserdiode emission wavelength is controlled by an internalgrating. ML-C-1490-DFB-2G5-X has been designedfor digital optical communication networks withup to 3.125 Gb/s modulation speeds. The bare dieproduct is available as two different versions, with 6mW and 10 mW maximum rated power.Bare die productsElectro-Optical Characteristics 1Parameter Symbol Min Typ Max Unit Test ConditionRated optical power 2 PR 6/10 - - mW 0-70°CThreshold current 3 Ith - 18 28 mA 25°C- 35 50 70°COperating current Iop - 38 46 mA 25°C, Pop=5 mW- 65 90 70°C, Pop=5 mWOperating voltage Vop - 1.1 1.5 V 0-70°C, Pop=5 mWSerial resistance 4 Rs - 5 - Ω 25°C, Pop=5 mWSlope efficiency 4 η 0.18 0.26 - W/A 25°C, Pop=5 mW0.10 0.16 70°C, Pop=5 mWCentral wavelength λc 1487 1490 1493 nm 25°C, Pop=5 mW1482 - 1498 0-70°C, Pop=5 mWSpectral width 5 ∆λ - 0.11 0.2 nm 25°C, Pop=5 mW0.07 0.2 70°C, Pop=5 mWSide Mode Suppression Ratio 6 SMSR 30 40 - dB 0-70°C, Pop=5 mWTemperature shift ∂λ/∂T - 0.11 . nm/K 0-70°C, Pop=5 mWof wavelengthPerpendicular beam θ⊥ - 45 48 deg 25°C, Pop=5 mWdivergence angle (FWHM) 7Parallel beam divergence θ|| - 26 34 deg 25°C, Pop=5 mWangle (FWHM) 7Modulation bandwidth f-3dB 6 - - GHz 25°C, Iop=Ith+16 mA4 - - 70°C, Iop=Ith+16 mANote 1: All temperatures refer to case temperature, TcNote 2: Kink-free, demonstrated reliability. Two different product versions available.Note 3: 2nd derivative methodNote 4: PLO=1 mW, P HI=7 mWNote 5: RMS, -20 dBNote 6: -20 dBNote 7: Full Width at Half Maximum39

Absolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 50 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAOperating case temperature Tc 0-70 °CStorage temperature TSTG -40-85 °CNote: Operation in excess of any one of thee parameters may result in permanent damage.Chip layout ML-C-1490-DFB-2G5-XAll dimensions in microns.Chip thickness: 100 µm.Polarity: p-contact (anode) upTop and bottom outer metal: 300 nm Au.Ordering InformationML - C - 1490 - DFB - 2G5 - X - B1Rated optical power6 = 6 mW10 = 10 mW40

Value adding solutions to optical applicationsML-C-1550-FP-2G5-D11550 nm Fabry-Pérot Laser Diode Chip for 2.5 Gb/sDescription1550 nm laser chip with Modulight’s proprietary design. Theexcellent high temperature behavior of the chip makes it suitablefor uncooled transmitters and transceivers up to 2.5 Gb/s. Theproducts are shipped as bare dies.Features• Excellent high temperature performance• MQW active layer• Stable single transverse mode emissionApplications• SONET/SDH transmitters and transceivers• ATM links• Datacom transceivers• Fiber-in-the-loop• Measurement and instrumentationBare die productsElectro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test Condition1Rated optical power Po 5 - - mW -40-85°CThreshold current Ith - 9 14 mA 25°C- 23 35 85°COperating current Iop - 27 30 mA 25°C, Po=5 mW- 48 60 85°C, Po=5 mWOperating voltage Vop - 1.1 1.4 V 25°C, Po=5 mWSlope efficiency η 0.22 0.29 - W/A 25°C, Po=5 mW, 1-7 mW0.14 0.19 - 85°C, Po=5 mW, 1-7 mWCentral wavelength λc 1530 1550 1570 nm 25°C, Po=5 mW1485 - 1610 -40-85°C, Po=5 mWSpectral width (FWHM) 2 ∆λ - 1.3 2.5 nm 25°C, Po=5 mWSerial resistance RS - 8 - Ω 25°C, Po=5 mW, 1-7 mWTemperature shift of wavelength ∂λ/∂T - 0.65 - nm/K -40-85°C, Po=5 mWPerpendicular beam divergence angle θ⊥ 30 44 50 deg 25°C, Po=5 mWParallel beam divergence angle θ|| 18 23 35 deg 25°C, Po=5 mWModulation bandwidth 3 f-3dB 6 - - GHz 25°C, Iop=Ith+16 mA4 - - 85°C, Iop=Ith+16 mANote 1: All temperatures refer to heatsink temperatureNote 2: -20 dB noise floorNote 3: Chip-on-carrier, ground-signal-ground microwave probe41

Absolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAOperating case temperature TOP -40-85 °CStorage temperature TS -40-85 °CChip layout and typical characteristicsAll dimensions in microns.Chip thickness: 100 µm.Polarity: p-contact (anode) up.42

Value adding solutions to optical applicationsML-C-1550-DFB-2G5-A11550 nm DFB Laser Diode Chip for 1.25 Gb/s and 2.5 Gb/sDescription1550 nm DFB (Distributed Feedback) laser chipfor up to 2.5 Gb/s data rates. Wavelength selectionand stabilization are done by a built-in opticalgrating.Applications• Long reach high-speed optical fiber communication• SONET OC-48• SDH (ITU recommendation G.957)STM-S-16.2 >15 km, L-1.2Bare die productsElectro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test Condition1Rated optical power Po 5 - - mW -20-70°CThreshold current Ith - 15 30 mA 25°C- - 50 70°COperating current Iop - 28 45 mA 25°C, Po=5 mW- - 80 70°C, Po=5 mWOperating voltage Vop - 1.1 1.5 V 25°C, Po=5 mWSlope efficiency η 0.18 0.30 - W/A 25°C, Po=5 mW0.15 - - 70°C, Po=5 mWPeak wavelength λc - 1550 - nm 25°C, Po=5 mW1530 - 1565 -20-70°C, Po=5 mWRMS spectral width 2 ∆λ - 0.1 0.3 nm 25°C, Po=5 mWSide mode supression ratio (SMSR) SMSR 30 40 - dB -20-70°C, Po=5 mWTemperature shift of wavelength ∂λ/∂T - 0.11 - nm/K -20-70°C, Po=5 mWPerpendicular beam divergence angle θ⊥ - 40 50 deg 25°C, Po=5 mWParallel beam divergence angle θ|| - 23 35 deg 25°C, Po=5 mWModulation bandwidth 3 f-3dB 6 - - GHz 25°C, Iop=Ith+16 mA4 - - 70°C, Iop=Ith+16 mANote 1: All temperatures refer to heatsink temperatureNote 2: -20 dB noise floorNote 3: Chip-on-carrier, ground-signal-ground microwave probe43

Absolute Maximum RatingsParameter Symbol Rating UnitOptical output power Po 15 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAOperating case temperature 1 ToP -20-85 °CStorage temperature TS -40-85 °CNote 1: Heatsink temperature, designed for 0-70°C transceiver ambient temperature.Chip layout and typical characteristicsAll dimensions in microns.Chip thickness: 100 µm.Polarity: p-contact (anode) up.44

Value adding solutions to optical applicationsLasers for range finding and LIDARThe pulsed laser range finder is based onmeasuring the difference in properties of transmittedand back-reflected light from the target.The target changes the properties of the incidentlight and the back-reflected light is analyzed inthe receiving equipment. Modulight manufacturesrange-finding lasers for various marketsegments.The distance measurement techniques are requiredin determining the height, width, distance,volume or movement of the target. Applicationsfor the technique are laser radar speed measurements,traffic safety, laser profiling of targetdimensions, weapons simulation, aeroplane/satellite positioning and security area monitoring.Modulight’s laser boasts a high peak-power anda short rise-time – laser characteristics which areimportant for high performance solutions.and reflectivity of the target. High power can beachieved by constructing several emitter stacksor by increasing single emitter dimensions. Lightpulses up to 120-150 Watts can be generatedusing Modulight’s laser diodes at 900nm wavelengthrange. Though comparably lower outputpower with 1550nm can be achieved, theselasers benefit in applications, where eye-safetyis in key role. Modulight is pioneering in the 1550nm range-finding lasers.Custom productsThe technological advances in the transmittershave followed the requirements in optical fibercommunication. The wavelengths 900 nm, 1310nm and 1550 nm are favored in fiber communicationdue to low fiber attenuation on thesewavelengths.The laser range finding applications set severalrequirements for the laser device. High outputpower is required at the same time in very shortpulses of even picosecond range. However,the required power is defined by the distanceLaser rangefinder applied in golf binocularsmeasures quickly an accurate distance fromthe golf pin.45

High power lasersModulight’s unmountedlaser bars.The applications of ‘Diode Pumped Solid StateLasers’ (DPSSL) have experienced a rapid developmentin a large number of activities fromindustrial, medical, space and defence. Thesenew activities are made possible by developmentof new performance in “High Power Laser Diodes”(HPLD). Modulight’s HPLDs are used for pumpingDPSSL. The main applications are materialprocessing, medical therapy, measurement andanalysis, printing and imaging, and spectroscopy.High Power Laser Diodes for DPSSLModulight manufacturers high power laser diodes(Fig. 1.) operating in the wavelength range ofabout 0.78 to 1.1 micron. These lasers are usedin optical pumping of solid state lasers, suchas the Nd:YAG, replacing traditional flash lampdesigns. High-power laser diodes are tuned to theabsorption band of the dielectric crystal resultingin much more efficient pumping of the laser rod,from which a high-power focused coherent beamof light is emitted. This beam can then be usedin a variety of industrial, medical, and militaryapplications. Laser diodes have been developedto match the absorption bands of a variety of dielectriccrystals in a broad wavelength range.The laser diodes are packaged in individualheatsink assemblies in order to have continuouswave (CW) operation (Fig. 2). These individualheatsinks could be stacked to form a linear arrayof CW laser diodes.of kilowatts. Typically, direct diode lasers operateat a shorter wavelength than the Nd:YAG (1.06µm) and CO2 (10.6 µm) lasers, which are commonlyused in industrial applications. This leadsto an advantage of the diode laser system, sincethe lower operating wavelength results in a higherabsorption rate with most metals. This is especiallytrue for aluminum in which the absorptionpeak is at the HPDL wavelength of 810nm. Inthe case of laser heat treating, diode lasers donot require pre-coating of metal parts in orderto achieve higher absorption as with the case ofCO2 lasers.The advantages of direct diode lasers are the highwall plug efficiency, order of magnitude smallerfootprint, lower maintenance, high absorptionin work piece, and high control bandwidth. TheHPDL are very small and compact, such that theentire laser head can easily be mounted to theend of the robotic arm or gantry for use.A further advantage of direct diode lasers is thatthey are solid-state lasers. This yields a highlycontrollable heat source. Unlike conventional systems,diode lasers do not require warm up timeto stabilize. Power can also be turned on and offinstantaneously, which realizes additional energysavings.Example of high-power laserdiode package.High Power Laser Diodes for DirectprocessingIn addition to applications involving the pumpingof solid state laser rods, Modulight’s high-powerlaser diodes are also used for direct processinglike marking, welding, and cutting of metalsand various other materials. This is possible bystacking several high-power laser diode bars ontop of one another to make stacked laser diodearrays with output powers potentially in the range46

RoHS compliance statementEuropean Union’s directive 2002/95/EC,Restrictions of Hazardous Substances (”RoHS”directive) becomes valid on Jul 1 2006 in themember states of European Union. It states that allnew electrical and electronic equipment put on themarket within the member states must not containcertain hazardous materials.List of restricted materialsQuantity limit 0.1% of weight (1000ppm) of anyhomogeneous material:1. Lead (Pb)2. Mercury (Hg)3. Hexavalent Chromium (Cr VI)4. Flame retardants Polybrominated Biphenyls(PBB) and Polybrominated Diphenyl Ethers(PBDE)Quantity limit 0.01% of weight (100 ppm) of anyhomogeneous material:1. Cadmium (Cd)‘Homogeneous material’ means a material that cannotbe mechanically disjointed into different materialsby, for example unscrewing, cutting, crushing,grinding and abrasive processes. Homogeneous isfurther defined as “of uniform composition throughout”.Following cases are exempted from the requirements(these are only the most important exemptionsfor Modulight, for full list see the originaldirective text):a) Lead in glass of cathode ray tubes, electroniccomponents and fluorescent tubes.b) Lead as an alloying element in steel containingup to 0.35% lead by weight, aluminum containingup to 0.4% lead by weight and as a copperalloy containing up to 4% lead by weight.c) Lead in high melting temperature type solders(i.e. tin-lead solder alloys containing more than85 % lead).d) Lead in solders for servers, storage andstorage array systems (exemption granteduntil 2010)e) Lead in solders for network infrastructure equipmentfor switching, signalling, transmission aswell as network management for telecommunication.f) Lead in electronic ceramic parts (e.g. piezoelectronicdevices).As an ISO14001-certified supplier of optoelectroniccomponents Modulight wants to reduce theenvironmental risks caused by above mentionedheavy metals where possible. Modulight’s isclarifying the RoHS compliance of its products.If non-compliance with RoHS directive is found,Modulight will replace the non-compliant parts inits production. All Modulight’s bare die and TOcanlaser products are RoHS compliant.Please see Modulight website atwww.modulight.com for up-to-date information.Inquiries related to RoHS compliance may besent to sales@modulight.com.General Information47

Reliability informationExample (ML-C-1310-FP-10GRELIABILITY REPORT) Thresholdcurrent@85°C submount temperature,measurement period 24 h.Reliability SummaryParameter Measured value UnitsMedian Life (ML) @ 25°C 1.23E+07 hMedian Life (ML) @ 40°C 5.86E+06 hMedian Life (ML) @ 80°C 9.10E+05 hStandard deviation Ω of ML @ 85°C 1.09Wear-out failure Rate @40°CAt 5 years ( λ 5) 0 FITAt 10 years ( λ 10) 3 FITAt 20 years ( λ 20) 12 FITRandom Failure rate ( λ r) @ 40°C 60% C.L. 1169 FITRandom Failure rate ( λ r) @ 40°C 90% C.L. 2922 FITWear-Out Activation Energy (Ea) 0.4 eVRandom Failure Activation Energy (Ea) 0.35 eVThe table shows example results forone of Modulight’s products. Completereports can be fetched from Modulightwebsite or requested by email fromsales@modulight.com.The relatively high failure rates forrandom failures are due to the lowamount of test hours (~150000). Evenwithout any occurred random failures,one million device hours at 85°Cresults in 451 FIT@40°C with 90 %confidence limit.48

Liability noteThe information herein is given to describe certaincomponents and shall not be considered as warrantedcharacteristics.All statements herein are believed to be reliable andaccurate. However, the accuracy is not guaranteed,and no responsibility is assumed for any inaccuraciesor omissions. Modulight reserves the right to makechanges in the specification at any time without priornotice.General InformationWhere Modulight is shown to have failed to exercisereasonable care in the manufacture and/or supply of theGoods and such failure results in death or personal injurythe Company shall not be liable in respect of claimsarising by reason of death or personal injury. Furtherunder no circumstances whatsoever shall the Companybe liable for consequential loss (including removal orrectification work required in connection with installationof repaired or substitute Goods) loss of profits or damageto property.Modulight’s liability in respect of such items not manufacturedby it shall be limited to the liability of thesupplier to Modulight of such items. Modulight assumesno responsibility of any kind of use or non-use of theproducts.Modulight’s liability whether in respect of one claim orthe aggregate of various claims other than claims fordeath or personal injury due to negligence on the part ofModulight shall not exceed the purchase price payableby the Customer under the contract and the customeragrees to insure adequately to cover such claims inexcess of such amount.For latest product information and questions on products,technology, full delivery terms and prices please visitModulight webpage at www.modulight.com or contactour main office in Finland or some of our representativeoffices. For contact information, see back cover.Safety informationLaser light emitted from laser diodes may be invisibleto human eye and may be harmful to the human eye.Avoid looking directly in to the laser beam, visible orinvisible. Avoid exposure to the laser beam, any reflectedor collimated beam.Products may only be used in life-support devices orsystems with the express written approval of Modulight,Inc. Life-support devices or systems are intended tosupport and/or maintain and sustain and/or protecthuman life. Their failure may endanger the health of theuser or other persons.ESD informationProducts are subjected to risks associated with sensitiveelectronic devices including but not limited to staticdischarge, transients, and overload. Please take careof proper ESD protection prior to handling the products.Customer is solely responsible for the proper storageand usage of the products.49

Modulight Quality PolicyModulight, Inc. develops, manufactures, and marketshigh-performance semiconductor components and servicesfor optical applications. We all at Modulight arecommitted to achieving business excellence in providingto our Customers products and services that meet theirneeds and exceed their expectations. We are set toachieve this in all we do, on time, every time.We will achieve this by applying a process approach inour Quality Management System, continually improvingthe way we work. Our decisions and conclusions arebased on factual decision-making. We are determined toidentify Customer requirements and to incorporate theminto our products and services.We consider our Employees as our most valuableresource. We provide all Employees the opportunityfor the development of professional skills, expertiseand craftsmanship. The objectives we set are reachedthrough involvement of all personnel. We value highlythose who facilitate positive experiences in work andteam working.We believe that all good relationships base on mutualtrust. Our objective is to deliver true and exact informationto our Customers, Employees, Partners and otherinterested parties.Modulight respects the environment by aiming at reducingwaste, emissions and the use of natural resources. Weaim at prevention of pollution and we are committed tocomply with relevant environmental legislation and regulations.Dr. Petteri UusimaaPresident & CEOModulight, Inc.50

Modulight ValuesIn order to implement our strategy and support the long-termgrowth Modulight has defined values, which we want to cherishin all the things we do.RespectWe respect each other and cherish diversity. We want to understandand adapt to local cultures while being proud of our own.We want to respect other ways of doing things besides our ownand openly view these alternative approaches as potential bestpractices that we could all adopt. Respect does not howevermean accepting mediocre work performance in anything.RenewalWe recognize constant state of change as our natural way ofbeing. We try to adapt to the change and take best out of it.We are committed to continuous improvement for the benefitof our customers, colleagues, shareholders, partners and otherstakeholders.Customer satisfactionWe aim at highest possible customer satisfaction and focus. Ouraim is to deliver A-plus experience to our customers.PassionWe want to have joy in our work. We want to help our colleaguesand take pride in our own work also. We give recognition individualcontribution and give credit to it accordingly. However,we recognize that team is more than sum of its parts. We valuehighly especially those who facilitate positive experience andteam working.51

We want to become an extraengineer in your developmentteam – the guy who takescare of the laser.FINLANDModulight, Inc.Hermiankatu 22FIN-33720 Tampere,FINLANDTel. +358 20 743 9000Fax +358 20 743 9009sales@modulight.comwww.modulight.comRepresentatives: JAPAN KOREA ISRAELHIGH-TECH CORPORATION44-18, 4-Chome, Honcho, Nakano-ku164-0012 TokyoJapanTel. +81 3 3229 7351Fax +81 3 3229 7361Email: morimoto@high-tech.co.jpwww.high-tech.co.jpJinsan Scientific Co., Ltd.3F Hwa-Jin Bldg., 13-2 Woo-Myun DongSeo-Cho Gu137-140 SeoulKoreaTel. +882 578 4271Fax +822 578 4274Email: yjshim@jinsanco.co.krwww.jinsanco.co.krMigvan Technologies & Engineering13 Hashiloach St.Petach-Tikva 49170IsraelTel. +972 3 9240784Fax +972 3 9240787Email: ori@mte.co.ilwww.mte.co.ilCopyright Modulight, Inc. Feb 200552