COAX products - Modulight

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Absolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAOperating case temperature TOP -40-85 °CStorage temperature TS -40-85 °CChip layout and typical characteristicsAll dimensions in microns.Chip thickness: 100 µm.Polarity: p-contact (anode) up.42
Value adding solutions to optical applicationsML-C-1550-DFB-2G5-A11550 nm DFB Laser Diode Chip for 1.25 Gb/s and 2.5 Gb/sDescription1550 nm DFB (Distributed Feedback) laser chipfor up to 2.5 Gb/s data rates. Wavelength selectionand stabilization are done by a built-in opticalgrating.Applications• Long reach high-speed optical fiber communication• SONET OC-48• SDH (ITU recommendation G.957)STM-S-16.2 >15 km, L-1.2Bare die <strong>products</strong>Electro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test Condition1Rated optical power Po 5 - - mW -20-70°CThreshold current Ith - 15 30 mA 25°C- - 50 70°COperating current Iop - 28 45 mA 25°C, Po=5 mW- - 80 70°C, Po=5 mWOperating voltage Vop - 1.1 1.5 V 25°C, Po=5 mWSlope efficiency η 0.18 0.30 - W/A 25°C, Po=5 mW0.15 - - 70°C, Po=5 mWPeak wavelength λc - 1550 - nm 25°C, Po=5 mW1530 - 1565 -20-70°C, Po=5 mWRMS spectral width 2 ∆λ - 0.1 0.3 nm 25°C, Po=5 mWSide mode supression ratio (SMSR) SMSR 30 40 - dB -20-70°C, Po=5 mWTemperature shift of wavelength ∂λ/∂T - 0.11 - nm/K -20-70°C, Po=5 mWPerpendicular beam divergence angle θ⊥ - 40 50 deg 25°C, Po=5 mWParallel beam divergence angle θ|| - 23 35 deg 25°C, Po=5 mWModulation bandwidth 3 f-3dB 6 - - GHz 25°C, Iop=Ith+16 mA4 - - 70°C, Iop=Ith+16 mANote 1: All temperatures refer to heatsink temperatureNote 2: -20 dB noise floorNote 3: Chip-on-carrier, ground-signal-ground microwave probe43
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COAX products - Modulight

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