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COAX products - Modulight

COAX products - Modulight

ML-C-1310-DFB-2G5-D11310

ML-C-1310-DFB-2G5-D11310 nm DFB Laser Diode Chip for 1.25 Gb/s and 2.5 Gb/sDescription1310 nm DFB (Distributed Feedback) laser chip withexcellent high temperature performance, designedfor intermediate and long reach optical transceiversup to 2.5 Gb/s data rates. Wavelength selection andstabilization are done by a built-in optical grating.Applications• Intermediate and long reach high-speed opticalfiber communication• Gigabit Ethernet transceivers (1.25G, 1000BASE-BX-20-U)• 1x/2x Fibre Channel (1.06G / 2.125G)• SONET OC-48• SDH STM-S-16.1 >15 kmElectro-Optical CharacteristicsParameter Symbol Min Typ Max Unit Test Condition1Rated optical power Po 7 - - mW 0-85°CThreshold current Ith - 12 18 mA 25°C- 24 40 85°COperating current Iop - 26 40 mA 25°C, Po=5 mW- 42 65 85°C, Po=5 mWOperating voltage Vop - 1.15 1.3 V 25°C, Po=5 mWSlope efficiency η 0.22 0.38 - W/A 25°C, Po=5 mW0.15 0.28 - 85°C, Po=5 mWCentral wavelength λc 1287 1307 1327 nm 25°C, Po=5 mW1280 - 1335 0-85°C, Po=5 mWSpectral width (FWHM) 2 ∆λ - 0.07 0.2 nm 25°C, Po=5 mWSide mode supression ratio (SMSR) SMSR 35 43 - dB 25°C, Po=5 mWTemperature shift of wavelength ∂λ/∂T - 0.09 - nm/K 0-85°C, Po=5 mWPerpendicular beam divergence angle θ⊥ - 35 45 deg 25°C, Po=5 mWParallel beam divergence angle θ|| - 27 35 deg 25°C, Po=5 mWModulation bandwidth 3 f-3dB 5 - - GHz 25°C, Iop=Ith+16 mA4 - - 85°C, Iop=Ith+16 mANote 1: All temperatures refer to heatsink temperatureNote 2: -20 dB noise floorNote 3: Chip-on-carrier, ground-signal-ground microwave probe32

Value adding solutions to optical applicationsAbsolute Maximum RatingsParameter Symbol Rating UnitOptical output power Pop 20 mWLD reverse voltage VRLD 2 VLD forward current IFLD 200 mAOperating temperature (4) Top 0-85 °CStorage temperature TS -40-85 °CChip layout and typical characteristicsBare die productsAll dimensions in microns.Chip thickness: 100 µm.Polarity: p-contact (anode) up.33

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