Lect. 13: High-Frequency Model of MOSFET (4.8)

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Lect. 13: High-Frequency Model of MOSFETC GDL ov,1L ov,2L ov= L ov,1 +L ov,2C GSIn saturation,C GS= 2/3 WLC ox+ WL ovC ovC GD=WL ovC ov (about 2fF for L=1.0µm)C GS> C GD(about 20fF for L=1.0µm)Electronic Circuits 1High-Speed Circuits and Systems Laboratory
Lect. 13: High-Frequency Model of MOSFETHow does a capacitor affect frequency response of a circuit?Consider an RC circuitvi() t − vo() t dvo()t= it () = CRdtdvo() t vo() t vi()t+ =dt RC RCIf v ( t) = V exp( jωt), v ( t) = V exp( jωt) (why?)Voi i o o= ?What is V O(t)/V i(t)?Electronic Circuits 1Voexp( jωt) Viexp( jωt)jω⋅ Voexp( jωt)+ =RC RC1 1Vo( jω+ ) = ViRC RC11RC jωCVo = Vi = Vi1 1jω+ R+RC jωC1Voltage divider with capacitor impedance of !jωCHigh-Speed Circuits and Systems Laboratory
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Lect. 13: High-Frequency Model of MOSFET (4.8)

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