HigH Voltage Pulsed generators - Physical Instruments

HigH Voltage Pulsed generators

HV pulse technology for Plasma Immersion Ion
Implantation and other applications
GBS Elektronik GmbH started in 1997 to manufacture
customized pulse generators for plasma based
ion implantation applications. This extended to a
full spectrum of pulse generators based on different
principles. Now the range offered is from 1- 50 kV
peak voltage and from 1-120A peak current.
Where the first pulse generators were based on electron
tubes (RUP1, RUP2, RUP4, RUP5) now the majority
of high power generators is based on IGBT stacks
(RUP6). For the range below 15kV peak voltage and
5A peak current pulse generators with MOSFET
switch modules (RUP3 series) have been successfully
implemented. All the RUP series (Rossendorf Universal
Pulse generator) deliver mostly square wave
pulses, and can deal with a broad range of load impedances.
Pulse parameters (frequency, pulse width,
amplitude) are freely adjustable.
Also the range of applications has been extended.
So we offer power supplies for magnetron sputtering
(RUPmag), High Power Impulse Magnetron Sputtering
(RUP7, 1kV, up to 400A), Dielectric Barrier Discharges
(Minipuls, HFpuls).
But also applications far from surface treatment have
been served. This includes treatment of liquids (Hydropuls)
beam deflection in particle accelerators,
pulsing of ion sources extraction, driving of ignitrons,
spark gap triggering and piezo control.
Some of the smaller pulse generator designs as well
as HV supplies are available as OEM version (documented
circuit boards without housing). This is interesting
for customers with tight budget as well as for
customers which want to integrate HV technology
into their own devices.
Our strength is to offer customized and new to be
developed high voltage devices within short lead
time. So ask us if your application is very special and
you are not served elsewhere.

The ion beam center of the Institute of Ion Beam
Physics and Materials Research at the Dresden-Rossendorf
Research Center carries out basic research in
the areas of materials science as well as modification
and analysis of solid surfaces using ion beams.
In addition to various types of metal, hard material
and functional layers for biomedical, electronic, magnetic,
optical and tribological applications, semiconductor
layers are also a research emphasis.
The Institute operates a cross-regional and international
ion beam center, user facility of the European
Community as CENTER FOR APPLICATION OF ION
BEAMS IN MATERIALS RESEARCH (AIM) and SUPPORT
OF PUBLIC AND INDUSTRIAL RESEARCH USING ION
BEAM TECHNOLOGY (SPIRIT) which makes its facilities
available to outside users from universities, other
research institutes and industry from the European
Union while offering services such as technology
transfer related to ion beam technologies.
The effect of ion bombardment on the generation
and modification of thin films is studied experimentally
and using computer simulation. In the experimental
area targeted in situ real time diagnostic
procedures are employed in order to understand the
processes in detail and optimise them. The focus of
the studies includes, in addition to the relationships
between structure and properties, various possible
applications. An important component of the research
and development on new thin film systems
is the use of low-energy ions and the use of pulsed
plasma for generating metastable phases, high film
densities, extraordinary adhesion of films, nanostructures
or special textures.
A closed cooperation and interaction with industrial
partners is focused on the technology transfer of
modern ion technologies and the development of
high-tech equipment in this field.
http://www.fzd.de

Main research topics in FZD using pulse
generators of GBS Elektronik GmbH
� Tribological improvement of steel by nitrogen
PBII
� Nitridation of steel or other metals and alloys by
PBII
� Deposition of hard coatings by PBII+Deposition
(TiN)
� Improvement of HT oxidation behaviour of TiAl
by halogenes PBII
� Nanoporous stainless steel surfaces for medical
applications by noble gas PBII
� Emitter doping in photovoltaics by PBII
� Reactive MF pulsed dual magnetron sputtering
of TCO
� Reactive MF pulsed dual magnetron sputtering
of optical and semiconducting oxides
� Deposition of stress relaxed cubic BN films
HV Pulse generator RUP3-3A
Custom made high voltage pulse generators in the
range of 1 - 45 kV peak voltage, kW to MW peak
power and 0.1 - 12 kW average power.
For research equipment the RUP series (Rossendorf
Universal Pulse Generator) were developed:
Common to all RUP pulse generators is, that they
deliver square wave pulses, can deal with a broad
range of load impedances, tolerates short circuits
and arcs, and pulse parameters (frequency, pulse
width, amplitude) can be freely adjusted.
For applications where the demand for voltage,
peak current and power is limited, the RUP3 is a
good choice.
It switches a DC voltage with a MOSFET switch
module to the output. The MOSFETs are protected
by current limiting series resistors.
Waveform: Arbitrary square wave, duty cycle up to
DC operation. Ultrafast rise and fall times, at the
lower voltages typically

For applications demanding high voltage but limited
current, the RUP4 is still resonable.
Its topology is quite simple. As switch a hard tube
(tetrode) is used, the output is capacitively coupled.
Waveform: Square wave with fast rise (~1µs) and
decay depending on load. Without load, fall is determined
by the HV power supply and in the order
of 100µs. Duty cycle should be

Typical used HV pulse generators for PBII
Typ
RUP1
RUP2
RUP3
RUP3-2/6b
RUP3-3a
RUP3-5a
RUP3-5aN
RUP3-5aRS232
RUP3-5/1a
RUP3-10B
RUP3-10bip
RUP3-10/5
RUP3-12/30
RUP3-15/50a
RUP4
RUP4r
RUP4a
RUP4n
RUP4b
RUP4-1b
RUP5
RUP6-1/5
RUP6-3x2
RUP6-6d
RUP6-10
RUP6-10
RUP6-10ciws
RUP6-12
RUP6-12b
RUP6-20
RUP6-22a
RUP6-22b
RUP6-25
RUP6-25
RUP6-25r
RUP7
RUP7
U max (kV)
100
50
5
2
3
5
5
5
5
10 (add. +/- 200V BIAS
10
10
12
15
30
40
50
30
30
40
60
1
3
6
10
10
10
12
12
20
22
22
25
25
25
1
1
I max (A)
10
4
10
10
6
1
1
1
2
10
10
5
30
5
32
32
24
8
24
8
100
100
2*40
50
80
40
120
90
90
30
50
50
30
30
30
450
450
P average (kW)
1.5
1
0.3
0.2
0.3
0.1
0.1
0.1
0.9
0.9
0.5
5
3
0.75
4
8
6
1.5
1.5
2
10
5
1.2
2.5
2.5
2.5
12
2.5
6
2.5
2.5
2.5
2
2.5
2
3
3

The device serie RUP (Rossendorf
Universal Pulse Generator)
includes all generators
with a broad spectrum of
impedances and parameters
(frequency, pulse length, amplitude).
The serie Ecopuls represents
a number of low cost and low
power pulse generators using
a pulse transformator. Many
different special solutions can
be offered.
Special solutions
� ECOPULS 2 is a cost effective
solution for PBII.
� Ignitronpuls for applications
with four ignitrons
with high current pulses
with low repitition.
� RUPmag 800 V, 1 kW,
flexible power supply for
pulsed dual magnetron
sputtering with two unipolar
or alternative bipolar
exits
� RUPmag2 dual power
supply for pulsed dual
magnetron sputtering
(low power 2*100W),
high frequencies (up to
200 kHz).
produced by GBS Elektronik GmbH
Universal High Voltage Pulse Generators
� RUP 1, basing on Tetrode TH5188, max. 100 kV, 10 A,
modular construction (old version)
� RUP 2, basing on Tetrode 4PR250C, max. 45 kV, 4 A,
modular construction (old version, RUP4 is the better solution)
� RUP 3, basing on MOSFET-HV switch modules,
many versions up to 15 kV.
� RUP 3-2/6 (-2kV Pulse, -200V Bias voltage, 200 + 200W)
� RUP 3-3A (-3kV Pulse, 300W)
� RUP 3-5A (5kV Pulse, 100W)
� RUP3-5/1A (5kV Pulse, 1kW)
� RUP 3-5 (-5kV Pulse, 1kW)
� RUP3-5ion for pulsed mode of an ion source 5kV/2A average
current; second exit for synchronisation of the extraction grid.
� RUP 3-10B (-10 kV Pulse, +/- 200V Bias voltage, 500 + 200 + 200 W)
� RUP 3-10/5 (+10 kV Pulse, 5kW)
� RUP3-15A (-15kV Pulse, 750W)
� RUP3-7bip Bipolar Pulse Generator +/- 7.5 kV, 2*500W
� RUP 4, basing on tube 8960. max. 45 kV/32A.
� RUP4-1, 40kV, 8A peak, 2kW average power.
Recommended economic solution for high voltage
and moderate current or power.
� RUP 5, basing on tube Y546. max. 55 kV, 90A.
� RUP 6, basing on stapled IGBT switch modules.
Different voltage versions can be offered current
max. 50A, optional max. 120A possible.
� RUP6-1c (-1kV, 100A peak, 5kW)
� RUP 6-6d (-6kV, -200V Bias, additional 500V-high
current pulse mode, 2.5kW)
� RUP 6-10 (-10 kV Pulse, 2.5 kW)
� RUP 6-10i (3-10kV tuneable, 120A, 12kW)
� RUP 6-12 (-12 kV Pulse, 2.5 kW)
� RUP 6-12c (-12 kV Pulse, 120 A peak, 6 kW)
� RUP 6-20 (-20 kV Pulse, 2.5 kW)
� RUP 6-22a (22kV Pulse, resonant switcher,
max. frequency 5kHz at half voltage)
� RUP 6-22b (-22 kV Pulse, -200 V Bias voltage, 2.5 kW + 200 W)
� RUP 6-25 (-25 kV, 2.5 kW)

Surface hardening and wear protection
of metals by PBII
If proper ions are implanted into metallic substrates,
for instance nitrogen ions in titanium, the surface
sensitive properties of the substrate material are
remarkably changed, hence due to the stopping
range of the implanted ions, in case of PBII only up
to a depth of less than 1 µm. Larger modification
depth’s will be obtained, if the implantation is done
at elevated temperatures, resulting in a diffusion of
the implanted ions.
Further investigations concern the nitridation and
boronisation of HSS and hard metals and surface
hardening of Al and Mg in many medical applications.
Nitrogen ion implantation into austenitic stainless
steel at elevated temperatures of 350 – 400 °C
leads to a significant increase in the surface hardness
while the specific wear volume is reduced by
several orders of magnitude. A fast diffusion leads
to the formation of layers with a thickness of up
to 0.05 mm in a technologically useful timeframe.
The surface hardness itself reaches values between
1300 and 1700 HV, thus the obtained layer thickness
is more than sufficient for typical applications.
At the same time, the corrosion properties of the
base material are maintained.
(Forschungszentrum Dresden Rossendorf applied RUP1, RUP4,
and RUP6)
Nitrided layer by PBII
X%CrNiMo 17.12.2, Plasma Based Ion Implantation,
40kV, 380 ˚C, 10 hours
Basic material
Nitrided layer
Wear improvement by PBII
Corrosion behaviour after PBII in comparison to untreated and
plasma nitrided surfaces
X5CrNiMo17.12.2

MF Pulsed Reactive Dual Magnetron
Sputtering of Nb2O5
Hydrogen depth profile obtained by nuclear reaction analysis
data for Nb2O5 films with open (blue) and closed (red) pores.
Optical applications require highly homogeneous,
amorphous oxide material with high refractive index,
low extinction, mechanical stress and thermal
shift. The reactive pulsed magnetron sputter deposition
facility is optimized to produce dense Nb2O5
films with refractive index n>2.5 and extinction coefficient
k~6x10-4 at light wavelength of 400 nm,
mechanical stress of -90 MPa, nearly zero thermal
shift, and hydrogen content below 1%. The optimum
films are denser compared to ordinary ones,
and contain closed pores (Nb2O5_1_closed pores,
Nb2O5_1_open_pores).
Such closed pores should relax the mechanical
stress and do not lead to significant thermal shift of
the optical properties. The nuclear reaction analysis
data show that the optimum films are nearly hydrogen
free, which confirms assumption about the
closed pores (Nb2O5_2).
(Forschungszentrum Dresden Rossendorf applied RUPmag)
Overview TEM images of the Nb2O5 films grown by reactive
medium frequency pulsed magnetron sputtering with open
and closed pores.

Advanced Implantation and Coating
Technology Based on Combination of
Magnetron Sputtering or Cathodic Arc
System and RF Plasma Source with PBII
The main advantage of metal plasma based ion
implantation and deposition (MePBIID) compared
to conventional thin film deposition technologies
is the athermal energy deposition by the accelerated
ions, causing an atomic mixing of the interface
zone. Thus, excellent adhesion is achieved even at
room temperature.
Analogous to ion beam assisted deposition, textured
thin films are obtained for MePBIID. By varying
the pulse voltage and the pulse length different
film orientations can be achieved. Despite a columnar
growth mode with column diameters between
50 and 500 nm, compact, dense and pore-free thin
film are obtained.
Equipment and technology:
� Inductively coupled RF discharge produces
mainly plasma of gaseous ions
� Magnetrons or arc produce a mixture of gaseous
and metal ions and neutrals
� Magnetrons can change metal-ion to metalneutral
ratio depending on operation conditions
� Use of noble gases allows metal ion implantation
and/or subsequent metal deposition assisted
by noble gas ion implantation
� Use of oxygen or nitrogen allows formation of
oxide and nitride films with with high adhesion
by high energy ion assistance.
Metal plasma generated by two magnetrons in the configuration
for implantation

Advanced Implantation and Coating
Technology Based on Combination of
Magnetron Sputtering or Cathodic Arc
System and RF Plasma Source with PBII
Magnetrons above the PBII sample holder provide
a high deposition rate of metal, oxide or nitride
films. At the start of deposition magnetrons should
work in HPIMSM mode generating a dense plasma
needed for the creation of an mixed interface layer
by PBII ion assistance for good film adhesion. After
that the magnetrons should work in normal meanpower
high duty cycle mode with high deposition
rate.
(Forschungszentrum Dresden Rossendorf applied RUP4 and
RUP6)

Nanostructured metal surfaces by PBII
(cardiovascular application)
Various passageways such as arteries, other blood
vessels sometimes become occluded or weakened.
For example, the passageways can be occluded by
a tumor, restricted by plaque, or weakened by an
aneurysm. A passageway can be reopened or reinforced,
or even replaced, with a medical endoprosthesis
(stents or stent-grafts). For bare metal stent
the in-stent restenosis was still a serious problem
for some patients and this spurred the medical
device companies to come up with a solution that
was more effective at preventing restenosis. In the
late 1990’s the first drug eluting stents (DES) were
developed as a solution to the problem of restenosis.
PBII of noble gases in metal can provide a formation
of medical devices with porous surface.
Advantages of nanostructured metal:
� Storage of therapeutic agents or drugs in the
surface;
� High biocompatibility;
� A base for other coatings or bio-layers.
Nanoporous bubble structures ➇
� high-dose helium implantation >10 18 cm -2
helium concentrations U 20 at.%
� temperatures U 0.2Tm
� Ion energy: 30keV
(Forschungszentrum Dresden Rossendorf applied RUP1 and
RUP6)
By high compressive stress delaminated cBN thin film
Stress development at cBN growth without ion induced
relaxation
Stress relaxation under simultaneous high energy ion
bombardment

Ion induced stress relaxation in cBN
by pulsed ion implantation
Pulse schema of BIAS for quasi stress free cBN coating
RF magnetron sputter equipment with complex BIAS for cBN
deposition
The deposition of cubic boron nitride films as a super
hard coating is very limited by the formation
of extreme high intrinsic stress and the resulting
delamination of the coating from the substrate at
film thicknesses lower 100nm. This high compressive
stress is caused by the low energy (< several
hundreds eV) recoil implantation of film forming
species nitrogen and boron, by densification and
by defect production in the growing films.
At biased rf magnetron sputter processes stress of
more than 10GPa was measured. Under simultaneously
application of a second ion energy (higher
than several keV) it was obtained a 90% stress relaxation
of the growing film by atomic displacements
under the surface. A complex pulsed bias of
the cBN growth with pulse voltages of
� For cBN growth: -100 to -180 V
� For stress relaxation: -2.5 to -8 kV
� For Surface discharge: +80V
(see pulse schema) enables a poor stress growth
process for µm thick cBN hard coatings.
(Forschungszentrum Dresden Rossendorf applied RUP3-10B)
RF plasma of N2/Ar for cBN deposition

Efficient oxydation protection of TiAl
alloys by plasma based ion implantation
of halogens
Metallographic cross-sections of unimplanted (left) and all-side
fluorine-implanted _-TiAl sample (right). Isothermal oxidation at
900 °C for 120 h in air.
Problem
Poor oxidation resistance at
temperatures above 700 °C
Temperature range required
for advanced structural
applications: 700 ° – 1100 °C
Solution
(Forschungszentrum Dresden Rossendorf applied RUP4 and RUP6)
� The best solution – ion
implantation of halogens
(notably chlorine and
fluorine)
� Beamline ion implantation
(BLII)
� Plasma immersion ion
implantation (PBII)
Effect
TiAl alloys modified by ion implantation
of halogens acquire a stable,
adherent and highly protective
scale against environmental
oxidation while retaining the bulk
mechanical properties of the starting
material.
The protective scale that forms is of
improved structural and mechanical
integrity.
As a result, a component made
from such an alloy can be rendered
highly resistant to oxidation in air
or similar oxidizing environments

Reactive MF Pulsed Dual Magnetron
Sputter Deposition of TCO
XRD j-scans of ZnO films grown using the following parameters:
no target presputtering, chemical cleaning of the substrate,
TS=RT, 600 °C; target presputtering, O2 RF plasma pretreatment
of the substrate, TS=550 °C.
Two magnetron sources can be used for investigations
of reactive dual magnetron sputtering processes
in pulsed mode. During the deposition, both
magnetrons are operating in unipolar or bipolar
mode, pulsed in the middle frequency range of
1-50 kHz. The operating power is from 100 W to
several kW possible on each magnetron. Optimization
of pulse frequency and on/off duration is free
programmable. Typical applications are the deposition
of high quality transparent conductive oxides
(ITO, ZnO:Al/AZO) or optical and semiconducting
layers on oxide base (NbO, TaO, TiO 2 a.s.o.).
(Forschungszentrum Dresden Rossendorf applied RUPmag and
RUPmag2)
Reactive O2/Ar plasma for TCO deposition of ZnO:Al

www.mbwm.de
GBS Elektronik GmbH
Bautzner Landstraße 22
01454 Großerkmannsdorf
Germany
Telefon: +0049 (0) 351 - 21 70 07 0
Telefax: +0049 (0) 351 - 21 70 07 21
E-Mail: kontakt@gbs-elektronik.de
www.gbs-elektronik.de
08/2009