FS3KM-10 - Datasheet Catalog

MITSUBISHI Nch POWER MOSFETFS3KM-10HIGH-SPEED SWITCHING USEGATE-SOURCE VOLTAGE VGS (V)20161284GATE-SOURCE VOLTAGEVS.GATE CHARGE(TYPICAL)Tch = 25°CID = 3AVDS = 100V400V200VSOURCE CURRENT IS (A)108642SOURCE-DRAIN DIODEFORWARD CHARACTERISTICS(TYPICAL)TC = 125°C75°C25°CVGS = 0VPulse Test0 0 4 8 12 16 200 0 0.8 1.6 2.4 3.2 4.0GATE CHARGE Qg (nC)SOURCE-DRAIN VOLTAGE VSD (V)DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)10 1 753210 0 753210 –1 –50ON-STATE RESISTANCE VS.CHANNEL TEMPERATURE(TYPICAL)VGS = 10VID = 1/2IDPulse Test0 50 100 150CHANNEL TEMPERATURE Tch (°C)GATE-SOURCE THRESHOLDVOLTAGE VGS (th) (V)5.04.03.02.01.00THRESHOLD VOLTAGE VS.CHANNEL TEMPERATURE(TYPICAL)VDS = 10VID = 1mA–50 0 50 100 150CHANNEL TEMPERATURE Tch (°C)DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C)DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C)1.41.21.00.80.60.4BREAKDOWN VOLTAGE VS.CHANNEL TEMPERATURE(TYPICAL)VGS = 0VID = 1mA–50 0 50 100 150CHANNEL TEMPERATURE Tch (°C)TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)TRANSIENT THERMAL IMPEDANCECHARACTERISTICS10 1 75 D=13 0.5210 0 0.27 0.153 0.0520.02PDM0.0110 –1 tw7 Single Pulse5T3 D= twT210 –2 10 –4 23 5710 –3 23 5710 –2 23 5710 –1 23 5710 0 23 5710 1 23 5710 2PULSE WIDTH tw (s)Feb.1999