THYRISTOR MODULES Medium power general use Insulated type

MITSUBISHI THYRISTOR MODULESTM10T3B-M,-HMEDIUM POWER GENERAL USEINSULATED TYPEABSOLUTE MAXIMUM RATINGSSymbolParameterMVoltage classHUnitVRRMRepetitive peak reverse voltage400800VVRSMNon-repetitive peak reverse voltage480960VVR (DC)DC reverse voltage320640VVDRMRepetitive peak off-state voltage400800VVDSMNon-repetitive peak off-state voltage480960VVD (DC)DC off-state voltage320640VSymbolParameterConditionsRatingsUnitIODC output current3-phase fullwave rectified, TC=79°C20AITSM, IFSMI 2 tSurge (non-repetitive) currentI 2 t for fusingOne half cycle at 60Hz, peak valueValue for one cycle of surge current2001.7 × 10 2AA 2 sdi/dtCritical rate of rise of on-state currentVD=1/2VDRM, IG=0.5A, Tj=125°C50A/µsPGMPeak gate power dissipation5.0WPG (AV)Average gate power dissipation0.5WVFGMPeak gate forward voltage10VVRGMPeak gate reverse voltage5.0VIFGMPeak gate forward current2.0ATjJunction temperature–40~125°CTstgStorage temperature–40~125°CVisoIsolation voltageCharged part to case2500V—Mounting torqueMounting screw M40.98~1.4710~15N·mkg·cm—WeightTypical value130gELECTRICAL CHARACTERISTICSSymbolParameterTest conditionsMin.LimitsTyp.Max.UnitIRRMIDRMVTM, VFMdv/dtVGTVGDIGTRth (j-c)Rth (c-f)Repetitive peak reverse currentRepetitive peak off-state currentForward voltageCritical rate of rise of off-state voltageGate trigger voltageGate non-trigger voltageGate trigger currentThermal resistanceContact thermal resistanceTj=125°C, VRRM appliedTj=125°C, VDRM appliedTj=125°C, ITM=IFM=20A, instantaneous meas.Tj=125°C, VD=2/3VDRMTj=25°C, VD=6V, RL=2ΩTj=125°C, VD=1/2VDRMTj=25°C, VD=6V, RL=2ΩJunction to case (per 1/6 module)Case to fin, Conductive grease applied (per 1/6 module)———500—0.2510———————————4.04.01.3—2.0—504.50.6mAmAVV/µsVVmA°C/W°C/W—Insulation resistanceMeasured with a 500V megohmmeter between main terminaland case10——MΩNote: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.Feb.1999