THYRISTOR MODULES Medium power general use Insulated type

MITSUBISHI THYRISTOR MODULESTM10T3B-M,-HMEDIUM POWER GENERAL USEINSULATED TYPETM10T3B-M,-H• IO DC output current ...................... 20A• VRRM Repetitive peak reverse voltage........ 400/800V• VDRM Repetitive peak off-state voltage........ 400/800V• 3 Phase Mix Bridge• Insulated Type• UL RecognizedYellow Card No. E80276 (N)File No. E80271APPLICATIONDC motor control, NC equipment, AC motor control, contactless switches,electric furnace temperature control, light dimmersOUTLINE DRAWING & CIRCUIT DIAGRAMDimensions in mm802 22–φ4.534T S RKGTGSGR N P227.5KGR GS GTPRST17 17N68Tab#110, t=0.5Tab#250, t=0.818.5 726LABEL31Feb.1999

MITSUBISHI THYRISTOR MODULESTM10T3B-M,-HMEDIUM POWER GENERAL USEINSULATED TYPEABSOLUTE MAXIMUM RATINGSSymbolParameterMVoltage classHUnitVRRMRepetitive peak reverse voltage400800VVRSMNon-repetitive peak reverse voltage480960VVR (DC)DC reverse voltage320640VVDRMRepetitive peak off-state voltage400800VVDSMNon-repetitive peak off-state voltage480960VVD (DC)DC off-state voltage320640VSymbolParameterConditionsRatingsUnitIODC output current3-phase fullwave rectified, TC=79°C20AITSM, IFSMI 2 tSurge (non-repetitive) currentI 2 t for fusingOne half cycle at 60Hz, peak valueValue for one cycle of surge current2001.7 × 10 2AA 2 sdi/dtCritical rate of rise of on-state currentVD=1/2VDRM, IG=0.5A, Tj=125°C50A/µsPGMPeak gate power dissipation5.0WPG (AV)Average gate power dissipation0.5WVFGMPeak gate forward voltage10VVRGMPeak gate reverse voltage5.0VIFGMPeak gate forward current2.0ATjJunction temperature–40~125°CTstgStorage temperature–40~125°CVisoIsolation voltageCharged part to case2500V—Mounting torqueMounting screw M40.98~1.4710~15N·mkg·cm—WeightTypical value130gELECTRICAL CHARACTERISTICSSymbolParameterTest conditionsMin.LimitsTyp.Max.UnitIRRMIDRMVTM, VFMdv/dtVGTVGDIGTRth (j-c)Rth (c-f)Repetitive peak reverse currentRepetitive peak off-state currentForward voltageCritical rate of rise of off-state voltageGate trigger voltageGate non-trigger voltageGate trigger currentThermal resistanceContact thermal resistanceTj=125°C, VRRM appliedTj=125°C, VDRM appliedTj=125°C, ITM=IFM=20A, instantaneous meas.Tj=125°C, VD=2/3VDRMTj=25°C, VD=6V, RL=2ΩTj=125°C, VD=1/2VDRMTj=25°C, VD=6V, RL=2ΩJunction to case (per 1/6 module)Case to fin, Conductive grease applied (per 1/6 module)———500—0.2510———————————4.04.01.3—2.0—504.50.6mAmAVV/µsVVmA°C/W°C/W—Insulation resistanceMeasured with a 500V megohmmeter between main terminaland case10——MΩNote: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.Feb.1999

MITSUBISHI THYRISTOR MODULESTM10T3B-M,-HMEDIUM POWER GENERAL USEINSULATED TYPEMAXIMUM RATINGSItemVRRM VRSM VR (DC) VDRMVDSMVD (DC)IT (RMS)IF (RMS)IT (AV)IF (AV)ITSMIFSMI 2 tdi/dtThyristorDiode————ItemPGMPG (AV)VFGMIFGMTjTstgThyristorDiode————ELECTRICAL CHARACTERISTICSItemIRRMIDRMVTMVFMdv/dtVGTVGDIGTRth (j-c)Rth (c-f)ThyristorDiode—————PERFORMANCE CURVESMAXIMUM FORWARD CHARACTERISTICRATED SURGE (NON-REPETITIVE)CURRENTCURRENT (A)10 3753210 27532Tj=125°CSURGE (NON-REPETITIVE)CURRENT (A)200160120804010 10.8 1.0 1.2 1.4 1.6 1.8FORWARD VOLTAGE (V)01 2 3 5 7 10 20 30 50 70100CONDUCTION TIME(CYCLE AT 60Hz)Feb.1999

MITSUBISHI THYRISTOR MODULESTM10T3B-M,-HMEDIUM POWER GENERAL USEINSULATED TYPEMAXIMUM TRANSIENT THERMALIMPEDANCE (JUNCTION TO CASE)(PER SINGLE ELEMENT)MAXIMUM POWER DISSIPATION(THREE PHASE FULLWAVE RECTIFIED)TRANSIENT THERMAL IMPEDANCE(°C/W)10 0 2 3 5 71015.04.03.02.01.0POWER DISSIPATION (W)8070605040302010RESISTIVE, INDUCTIVE LOADθ=30°60°120°90°010 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 710 00 0 5 10 15 20TIME (s)DC OUTPUT CURRENT(A)LIMITING VALUE OF THE DC OUTPUT CURRENT(THREE PHASE FULLWAVE RECTIFIED)CASE TEMPERATURE (°C)130120110100908070605040θ=30° 60° 90° 120°30 0 5 10 15 20DC OUTPUT CURRENT (A)Feb.1999