Fred L. Terry, Jr., ICSE-3, Vienna, Austria - University of Michigan
Fred L. Terry, Jr., ICSE-3, Vienna, Austria - University of Michigan
Fred L. Terry, Jr., ICSE-3, Vienna, Austria - University of Michigan
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Experimental Description<br />
• Lam TCP9400SE Plasma Etching System<br />
• Plasma Gas: HBr 100 sccm & Cl 2 15 sccm<br />
• Nominal Etching Rate: PR 5Å/sec, Oxide 3.6Å/sec,<br />
and Poly 30Å/sec<br />
PR<br />
CD<br />
PR<br />
<strong>Fred</strong> L. <strong>Terry</strong>, <strong>Jr</strong>., <strong>ICSE</strong>-3, <strong>Vienna</strong>, <strong>Austria</strong>, July 7, 2003<br />
PR<br />
SiO 2 SiO 2 SiO 2<br />
CD<br />
Si Substrate<br />
CD<br />
36
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