Fred L. Terry, Jr., ICSE-3, Vienna, Austria - University of Michigan
Fred L. Terry, Jr., ICSE-3, Vienna, Austria - University of Michigan
Fred L. Terry, Jr., ICSE-3, Vienna, Austria - University of Michigan
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Comparison <strong>of</strong> PR-Masked Si<br />
Etch to SEM Cross-Section<br />
• Si Trench Depth 173.32 ± 0.26 nm<br />
• Si CD 354.62 ± 11.37 nm<br />
<strong>Fred</strong> L. <strong>Terry</strong>, <strong>Jr</strong>., <strong>ICSE</strong>-3, <strong>Vienna</strong>, <strong>Austria</strong>, July 7, 2003<br />
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