EFM Evaporators - FOCUS GmbH

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EFM 2 Ultimate Precision down to 140-165 NW 35 CF 125 210 Ø 33 Sample distance: typically 10-150 mm Minimum radius for clearance at shutter position: 16 mm Sample distance: typically 10-150 mm • Extremely clean evaporation • Upgradeable • Cost-effective • Temperature range: 160 °C - 3300 °C • Fully bakeable up to 250 °C The EFM 2 is a basic version of the EFM 3. It features the same proven capabilities in terms of evaporation area, temperature range, reliability etc. as the EFM 3, but without the shutter and flux monitor. The dedicated EVC 100L electronics is a robust analogue supply with 100 W output power and emission regulation for stable growth conditions. Together both add up to a cost-effective yet reliable evaporator package, suitable for many different deposition tasks. Shutter and flux monitor can easily be retrofitted. 3 EFM 3 65 140-165 • Evaporation area Ø 5 - 20 mm • Flux monitor • Integrated shutter • Rear-loading of evaporant • EFM 3 for VT SPM and for LT SPM packages NW 35 CF Ø 33 Shutter 125 184 210 The EFM 3 is designed for thin film growth and molecular beam epitaxy. Sub-monolayer and multilayer systems can be produced with evaporation rates varying from 1/10 monolayer per minute to over 1000 monolayers per second. Water-cooling ensures low background pressure (typically in the 10 -10 mbar range) during evaporation - and thus allows the growth of ultra-pure films. The precisely defined evaporant beam allows highly uniform deposition on the sample. The deposition area is determined by the choice of three different easily exchangeable exit apertures and the distance from the source to the sample. A part of the evaporant beam is ionised. When these ions hit the substrate, they may create defects in the substrate surface and deposit energy. To avoid this the EFM 3 may optionally be equipped with an ion suppressor which repels the ions back into the EFM.
a Fraction of a Monolayer 88 4 EFM 3i 65 140-165 • Ion-Beam-Assisted Deposition • Ion suppression • Evaporation area Ø 5 - 20 mm • Flux monitor • Integrated shutter NW 35 CF Ion Lens Ø 33 Flux Monitor 125 184 210 Minimum radius for clearance at shutter position: 20 mm Sample distance: typically 10-150 mm Specifically designed for a smooth layer growth of difficult materials, the EFM 3i allows the controlled evaporation of the target material, and the generation of ions for Ion-Beam- Assisted Deposition (IBAD). The EFM 3i is based on the wellknown EFM 3 evaporator, with the addition of the unique ion beam generation technology. The ions can be produced either by an intrinsic process from the evaporated target material, or from inert gases with the help of an integrated gas inlet. The ions are focussed onto the substrate by an electro-static lens. Alternatively sensitive substrate materials can be protected against ion bombardment by a repelling lens voltage. The dedicated EVC 300i power supply supports not only the evaporation process but also supplies the lens voltage (up to 1100 V) and includes a sample current meter. The EFM 3i is compatible with the EVC 100/300 and NGEFM power supplies for the standard evaporator functionality. EFM 4 65 140-165 NW 35 CF 125 Minimum radius for clearance at shutter position: 34 mm Sample distance: typically 10-150 mm • Evaporation area Ø 10 - 50 mm • Flux monitor • Integrated shutter • Rear-loading of evaporant • Fully bakeable up to 250 °C 210 Ø 33 Ø 30 The EFM 4 is intended for the deposition on substrates with a diameter up to 50 mm. Evaporation rates vary from 1/10 monolayer per minute to over 1000 monolayers per second. The EFM 4 is suitable for crucible capacities up to 600 mm 3 . The effective water-cooling ensures low background pressure (typically in the 10 -10 mbar range) even during prolonged operation at high evaporant temperatures. The area of highly uniform deposition is selected by choosing one of three different exit apertures.
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EFM Evaporators - FOCUS GmbH

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