Group CV - Universidad de Cádiz
Group CV - Universidad de Cádiz
Group CV - Universidad de Cádiz
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Department of Materials Science,<br />
Metallurgical Engineering and<br />
Inorganic Chemistry<br />
Page 16 of 57<br />
Campus Universitario <strong>de</strong>l Río San Pedro<br />
Facultad <strong>de</strong> Ciencias<br />
11510 Puerto Real, <strong>Cádiz</strong>, Spain.<br />
Fax. +34 956 016 288<br />
Tfno. +34 956 016 335<br />
http://www2.uca.es/<strong>de</strong>pt/cmat_qinor/<br />
email: cim@merlin.uca.es<br />
Authors: J. Stemmer,, F. Fedler, H. Klausing, D. Mistele, T. Rotter, O. Semchinova, J. A<strong>de</strong>rhold, A. M. Sanchez, F. J.<br />
Pacheco, S. I. Molina, M. Fehrer, D. Hommel y J. Graul<br />
Title: “High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy”<br />
Journal/Book: J. Crystal Growth<br />
Key: A Volume: 216 Pages, First: 15 Last: 20 Date: 2000<br />
Editorial: Publication place:<br />
Authors: A.M.Sánchez, F.J.Pacheco, S.I.Molina, J.Stemmer, J.A<strong>de</strong>rhold y J.Graul<br />
Journal/Book: Mat. Sci. Eng. B<br />
Title: “Structural characterization of high temperature AlN intermediate layer in GaN”<br />
Key: A Volume: 80(1-3) Pages, First: 299 Last: 303 Date: 2001<br />
Editorial: Publication place:<br />
Authors: S.I.Molina, F.M.Morales y D.Araujo<br />
Title: “SiC thin films obtained by Si carbonization”<br />
Journal/Book: Mat. Sci. Eng. B<br />
Key: A Volume: 80(1-3) Pages, First: 342 Last: 344 Date: 2001<br />
Editorial: Publication place:<br />
Authors: M.J. Romero, R.J. Walters, D. Araújo, S.R. Messenger, G.P. Summers, R.W. Hoffman Jr. and R. García<br />
Title: "Proton-induced damage in p+-n InP solar cells: the role of electron capture at high fluences",<br />
Journal/Book: Mat. Sci. Eng. B<br />
Key: A Volume: 80 Pages, First: 293 Last: 296 Date: 2001<br />
Editorial: Publication place:<br />
Authors: A. M. Sanchez, F. J. Pacheco, S. I. Molina, J. Stemmer, J. A<strong>de</strong>rhold y J. Graul<br />
Title: “Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001)”<br />
Journal/Book: J. Electron. Mater.<br />
Key: A Volume: 30(5) Pages, First: L17 Last: L20 Date: 2001<br />
Editorial: Publication place:<br />
Authors: M. Gutiérrez, D. González, G. Aragón, R. García, M. Hopkinson and T. Fleischman<br />
Title: Strain relaxation behavior in InGaAs quantum wells on misorientated GaAs(111)B substrates<br />
Journal/BookInstitute Physics Conference Series 0951-3248<br />
Key: A Volume: Pages, First: 137 Last: 140 Date: 2001<br />
Editorial: Publication place:England<br />
Authors: R.J. Walters, G.P. Summers, S.R. Messenger, M.J. Romero, M.M. Al-Jassim, R. García, D. Araújo, A<br />
Freundlich, F. Newman and M.F. Vilela<br />
Title: "Electron beam induced current and catrhodoluminescence study of proton InAsP/InP quantum-well solar cells"<br />
Journal/Book: J of Appl. Phys.<br />
Key: A Volume: 90 Pages, First: 2840 Last:2848 Date: 2001<br />
Editorial: Publication place:<br />
Authors: R.J. Walters, S.R. Messenger, G.P. Summers, M.J. Romero, M.M. Al-Jassim, D. Araújo and R. García<br />
Title: "Radiation response of n-type base InP solar cells"
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