Group CV - Universidad de Cádiz
Group CV - Universidad de Cádiz
Group CV - Universidad de Cádiz
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Department of Materials Science,<br />
Metallurgical Engineering and<br />
Inorganic Chemistry<br />
Editorial: Publication place:<br />
Page 22 of 57<br />
Campus Universitario <strong>de</strong>l Río San Pedro<br />
Facultad <strong>de</strong> Ciencias<br />
11510 Puerto Real, <strong>Cádiz</strong>, Spain.<br />
Fax. +34 956 016 288<br />
Tfno. +34 956 016 335<br />
http://www2.uca.es/<strong>de</strong>pt/cmat_qinor/<br />
email: cim@merlin.uca.es<br />
Authors: A.M.Sanchez, P.Ruterana, P. Vennegues, F. Semond, F.J.Pacheco, S.I.Molina, R.Garcia, M.A.Sanchez-<br />
Garcia, E. Calleja<br />
Title: “Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si (111) grown by MBE”<br />
Journal/Book: Mat. Res. Soc.<br />
Key: A Volume:743 Pages, First: 157 Last: 162 Date: 2003<br />
Editorial: Publication place:<br />
Authors: P.L.Galindo, F.J.Pacheco, S.I.Molina, A.M. Sánchez, R.García, I.Turias, E.Guerrero, A. Yánez, J.Pizarro<br />
Title: ”On the application of advanced computing techniques to the <strong>de</strong>termination of thickness and <strong>de</strong>focus from High<br />
Resolution Transmission Electron Microscopy images”<br />
Journal/Book: Advances in Science and Technology<br />
Key: A Volume:36 Pages, First: 165 Last: 172 Date: 2003<br />
Editorial: Publication place:<br />
Authors: F. M. Morales, Ch. Zgheib, S. I. Molina, D. Araújo, R. García, C. Fernán<strong>de</strong>z, A. Sanz-Hervás, P. Masri, P.<br />
Weih, Th. Stau<strong>de</strong>n, V. Cimalla, O. Ambacher, J. Pezoldt<br />
Title: " The role of Ge pre<strong>de</strong>position temperature in the epitaxy of SiC on Silicon "<br />
Journal/Book: Phys. Sta. Sol. (c)<br />
Key: A Volume: 1(2) Pages, First: 341 Last: 346 Date: 2003<br />
Editorial: Publication place:<br />
Authors: M Gutiérrez, M Herrera, I Ross, D González, M Hopkinson and R García<br />
Title: Characterization of InGaAs(N)/GaAsN multi-quantum wells using transmission electron microscopy<br />
Journal/Book: Inst. Phys. Conf. Serv<br />
Key: Volume: 180 Pages, First: 143 Last: 146 Date: 2003<br />
Editorial: Publication place:<br />
Authors: P. Ruterana, A.M. Sánchez y G. Nouet<br />
Title: “Exten<strong>de</strong>d <strong>de</strong>fects in wurtzite GaN layers: Atomic structure, formation and interaction mechanisms”<br />
Journal/Book: Nitri<strong>de</strong> Semiconductors. Handbook on Materials and Devices (2003) WiILEY-VCH, 379-438<br />
Authors: M. Herrera, D. González, M. U. González, Y. González, L. González y R. García<br />
Title: Anomalous relaxation in combined low and high temperature growth of InGaAs/GaAs epilayers<br />
Journal/Book: Inst. Phys. Conf. Series 0951-3248.<br />
Key: A Volume: 180 Pages, First: 199 Last: 202 Date: 2003<br />
Editorial: Publication place: England<br />
Authors: M. Herrera, D. González, M. U. González, Y. González, L. González y R. García<br />
Title: Thickness influence on spinodal <strong>de</strong>composition formation in In0.2Ga0.8As/GaAs low temperature growth<br />
Journal/Book: Inst. Phys. Conf. Series 0951-3248<br />
Key: Volume: 180 Pages, First: 213 Last: 216 Date: 2003<br />
Editorial: Publication place: England
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