Chapter 2 C apte DIODE Part ７ Sinusoidal Inputs: Half-Wave ... - FKE
Chapter 2 C apte DIODE Part ７ Sinusoidal Inputs: Half-Wave ... - FKE
Chapter 2 C apte DIODE Part ７ Sinusoidal Inputs: Half-Wave ... - FKE
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Effect of Si Diode<br />
Si Diode<br />
The applied signal must have at least 0.7V (V T) before the diode can “turn on”.<br />
Nonconducting region: For v i less than 00.7V, 7V the diode is in an “open open circuit circuit” state and v 0 =0V 0V.<br />
Conducting region: v0 = vi - VT (VT =0.7V).<br />
The net effect is a reduction in area above the axis, which naturally reduces the resulting<br />
ddc voltage l llevel. l<br />
an average value (V m >> V T) Eq. (2)<br />
If V m is sufficiently larger than V T, eq.(1) is often applied as approximation for V dc.<br />
<strong>Ch<strong>apte</strong>r</strong> 2 <strong>DIODE</strong>, <strong>Part</strong> 7 <strong>Half</strong>-<strong>Wave</strong> Rectification 5
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