Semiconductor Characterization System Technical Data - Helmar

Model 4200-SCS Technical Data
SEmIcondUcTor
12
4200-ScS Semiconductor Characterization System
Technical Data
4200-PIV-Q Typical Specifications (continued)
mAxImUm drAIn SoUrcE (40V range), typical
maximum V d * (V) maximum I d * (A) r dS (W)
6.65 1.33 5
12.3 1.23 10
25 1.0 25
38 0.76 50
50 0.54 92
51.6 0.51 100
65 0.26 250
75.8 0.075 1k
*Approximate maximum, does not account for interconnect losses.
mAxImUm gATE SoUrcE (20V range ), typical
maximum V g * (V) maximum I g * (A) r gS (W)
3.6 0.769 5
6.67 0.667 10
13.3 0.533 25
20 0.400 50
*Approximate maximum, does not account for interconnect losses.
Max. Drain Voltage (V)
90
80
I V
1.6
1.4
70
1.2
60
1.0
50
40
0.8
30
0.6
20
0.4
10
V
I
0.2
0
0.0
1 10 100 1000 10000
DUT Drain-Source Resistance (Ω)
maximum Pulse drain I and V vs. drain-Source resistance
1.888.KEITHLEY (U.S. only)
www.keithley.com
Max. Drain Current (A)
STABILIzATIon KIT
The stabilization kit for the 4200-PIV-Q, the 4200-Q-STBL-KIT, minimizes the oscillations caused
be III-V RF transistors and LDMOS RF devices. The stabilization kit includes 10 resistors and 2
blanks for customization.
Stabilization resistor
10 resistors (+ 2 blanks) in the kit
A G R E A T E R M E A S U R E O F C O N F I D E N C E