TEFD4300 Silicon PIN Photodiode - datasheets

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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEFD4300
Vishay Semiconductors
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF 1 V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 0.15 3 nA
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
VR = 5 V, f = 1 MHz, E = 0
CD
CD
3.3
1.2
pF
pF
Open circuit voltage Ee = 1 mW/cm2 , λ = 950 nm VOC 350 mV
Temperature coefficient of VO Ee = 1 mW/cm2 , λ = 950 nm TKVo - 2.6 mV/K
Short circuit current Ee = 1 mW/cm2 , λ = 950 nm Ik 15 μA
Temperature coefficient of Ik Ee = 1 mW/cm2 , λ = 950 nm TKIk 0.1 %/K
Reverse light current Ee = 1 mW/cm2 , λ = 950 nm, VR = 5 V Ira 9 17 27 μA
Angle of half sensitivity ϕ ± 20 deg
Wavelength of peak sensitivity λp 950 nm
Range of spectral bandwidth λ0.1 350 1120 nm
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns
I r0 - Reverse Dark Current (A)
10 -6
10 -7
10 -8
10 -9
10 -10
10 -11
10 -12
V R = 10 V
0 20 40 60 80 100
T amb - Ambient Temperature (°C)
0.6
0 20
40 60 80 100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.1, 29-Nov-11 2
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Document Number: 83471
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I ra, rel - Relative Reverse Light Current
94 8416
1.4
1.2
1.0
0.8
V R = 5 V
λ = 950 nm
T amb - Ambient Temperature (°C)