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Nonlinear Optical Probes and Processes in Polymers and Liquid ...

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38<br />

Here ρ is the free charge (hole) density, NA the total density of acceptors, N i A the<br />

density of ionized acceptors, M1, M2, MT 1, MT 2 the densities of filled shallow traps,<br />

filled deep traps, <strong>and</strong> total shallow <strong>and</strong> deep trapp<strong>in</strong>g sites, respectively, E the electric<br />

field, <strong>and</strong> I the <strong>in</strong>cident light <strong>in</strong>tensity. J is the current density, µ the charge carrier<br />

drift mobility, ξ is the diffusion coefficient given by ξ = kBT/e. The quantity s is the<br />

cross-section of photogeneration, γT , β1, β2 the trapp<strong>in</strong>g rate <strong>and</strong> detrapp<strong>in</strong>g rates for<br />

shallow <strong>and</strong> deep traps, respectively, γ the recomb<strong>in</strong>ation rate, <strong>and</strong> ε the dielectric<br />

constant.<br />

S<strong>in</strong>ce the creation of a photorefractive hologram assumes a non-uniform light<br />

<strong>in</strong>tensity pattern created by the <strong>in</strong>terfer<strong>in</strong>g beams, the <strong>in</strong>cident light <strong>in</strong>tensity can be<br />

expressed as a periodic function of x :<br />

I = I0 + I1 cos Kx (2.30)<br />

where K is the grat<strong>in</strong>g vector chosen to be parallel to x -direction.<br />

We consider the parameters s, µ, γT <strong>and</strong> γ to be electric field dependent assum<strong>in</strong>g<br />

the follow<strong>in</strong>g dependencies [17]:<br />

s = s(Eref)(E/Eref) p , µ = µ(Eref)e βµ(E1/2 −E 1/2<br />

ref )<br />

γ = γ(Eref)e βµ(E1/2 −E 1/2<br />

ref ) , γT = γT (Eref)e βγ(E1/2 −E 1/2<br />

ref )<br />

(2.31)<br />

Here Eref is the relevant reference electric field for each of the parameters. Dur<strong>in</strong>g<br />

photorefractive grat<strong>in</strong>g formation, the reference electric field for photogeneration ef-

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