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Physik: DPG Tagungen - Sitzung O 28 - Nano-science.de

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<strong>Physik</strong>: <strong>DPG</strong> <strong>Tagungen</strong> - <strong>Sitzung</strong> O <strong>28</strong><br />

http://www.dpg-tagungen.<strong>de</strong>/archive/2004/o_<strong>28</strong>.html<br />

Institut für <strong>Physik</strong>alische und Theoretische Chemie, Universität Bonn, 53115 Bonn<br />

Mit <strong>de</strong>m Ziel kleine, organische Moleküle als "Son<strong>de</strong>n" auf die Oberflächenreaktivität elektrokatalytisch aktiver,<br />

binärer Elektro<strong>de</strong>n einzusetzen, wer<strong>de</strong>n potentielle organische Säuren zunächst auf <strong>de</strong>n Oberflächen <strong>de</strong>r<br />

einzelnen Metallkomponenten untersucht.<br />

Dazu wur<strong>de</strong> das Reaktionsverhalten von Ameisensäure (HCOOH) bei Kontakt mit einer Pd(111)-Elektro<strong>de</strong> im<br />

UHV mittels TDS, UPS und IRRAS sowie in Lösung mit IRRAS untersucht.<br />

Die spektroskopische Charakterisierung <strong>de</strong>r chemisorbierten HCOOH im UHV zeigt die Desorption <strong>de</strong>s intakten<br />

Moleküls aus <strong>de</strong>r Multilage bei 160 K und in geringen Mengen aus <strong>de</strong>r Monolage bei 186 K. In <strong>de</strong>r Monolage<br />

überwiegt <strong>de</strong>r Zerfall zu CO 2 und H 2 . Zahlreiche Intermediate <strong>de</strong>s katalytischen Zerfalls können anhand ihrer<br />

IR-Absorptionsfrequenzen zwischen 1800 cm -1 und 1900 cm -1 nachgewiesen wer<strong>de</strong>n.<br />

In situ IR-Untersuchungen in reiner HCOOH zeigen sowohl die katalytische Freisetzung von CO 2 als auch die<br />

beschleunigte elektrochemische Oxidation ( > 0.4 V vs. NHE) <strong>de</strong>r Säure.<br />

O <strong>28</strong>.19 Poster Mi 16:00 Bereich C<br />

Ab-Initio-Investigation of Static and Magnetic Properties of Fe|GaAs(001)<br />

•Harald Dobler und Dieter Strauch<br />

Institut für Theoretische <strong>Physik</strong>, Universität Regensburg, 93040 Regensburg<br />

We <strong>de</strong>termine the structure and magnetic properties of the (001)-surface of GaAs covered by iron. Encouraged<br />

by our former investigations of the system Fe|ZnSe, where we have obtained dramatic <strong>de</strong>viations from the i<strong>de</strong>al<br />

structure as well as sensitivity of the magnetic properties to structural changes, we consi<strong>de</strong>r another example<br />

for the compound semiconductor. Again, the lattice constant of GaAs and the doubled value of α-Fe agree very<br />

well. Nevertheless, we find significant variations of the i<strong>de</strong>al behavior. We present our results for one, two,<br />

three, and four monolayers of iron. Similar to the case of Fe|ZnSe the effects are most interesting for a single<br />

monolayer. Therefore, we show the structures and the profiles of the <strong>de</strong>nsity of valence electrons and the<br />

magnetization in the direction perpendicular to the interface.<br />

The computations are carried out in the framework of spin polarized <strong>de</strong>nsity functional theory implemented in<br />

the program package VASP [1,2]. Further, we use expansion in plane waves, ultrasoft pseudopotentials, and<br />

generalized gradient corrections (GGA). The relaxations of the structures are realized using a conjugate-gradient<br />

method.<br />

[1] G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993)<br />

[2] G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996)<br />

O <strong>28</strong>.20 Poster Mi 16:00 Bereich C<br />

Si(001) surface optical properties modified by organic functionalization and oxidation<br />

•Andreas Hermann, Frank Groth, Wolf G. Schmidt, Kaori Seino, Martin Preuss, Patrick H. Hahn und Friedhelm<br />

Bechstedt<br />

Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743<br />

Jena, Germany<br />

Tremendous efforts have been <strong>de</strong>voted to investigate the optical properties of clean Si(001) surfaces. Their<br />

reflectance anisotropy spectra (RAS) are now well un<strong>de</strong>rstood in terms of <strong>de</strong>fects and transitions between<br />

surface states as well as surface-modified bulk wave functions [1]. Far less is known about the modifications<br />

of the surface optical response by chemical reactions. Inspired by recent experiments [2] we study numerically<br />

the influence of organic functionalization with phenanthrenequinone and layer-by-layer oxidation on the RAS<br />

spectrum of Si(001). The calculations are performed using the gradient-corrected <strong>de</strong>nsity functional theory<br />

(DFT-GGA) in conjunction with non-normconserving ultrasoft pseudopotentials and a plane-wave basis. The<br />

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