IDW40E65D2 - Infineon

Diode
RapidSwitchingEmitterControlledDiode
IDW40E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl

IDW40E65D2
EmitterControlledDiode
RapidSwitchingEmitterControlledDiode
Features:
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltageandstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating;RoHScompliant
Applications:
A
C
•BoostdiodeinCCMPFC
Packagepindefinition:
•Pin1-notconnected
•Pin2-cathode
•Pin3-anode
1 2
3
KeyPerformanceandPackageParameters
Type Vrrm If Vf,Tvj=25°C Tvjmax Marking Package
IDW40E65D2 650V 40A 1.6V 175°C D40E65D2 PG-TO247-3
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Rev.1.2,2013-05-22

IDW40E65D2
EmitterControlledDiode
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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Rev.1.2,2013-05-22

IDW40E65D2
EmitterControlledDiode
Maximumratings
Parameter Symbol Value Unit
Repetitive peak reverse voltage VRRM 650 V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF 80.0
40.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave
IFSM
250.0
PowerdissipationTC=25°C Ptot 180.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
Mounting torque, M3 screw
Maximum of mounting processes: 3
A
A
°C
M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
Diode thermal resistance, 1)
junction - case
Thermal resistance
junction - ambient
Rth(j-c) 0.84 K/W
Rth(j-a) 40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter Symbol Conditions
Value
min. typ. max.
Unit
StaticCharacteristic
Diode forward voltage
Reverse leakage current
VF
IR
IF=40.0A
Tvj=25°C
Tvj=175°C
VR=650V
Tvj=25°C
Tvj=175°C
-
-
-
-
1.60
1.65
-
-
2.30
-
40.0
4000.0
V
µA
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter Symbol Conditions
Value
min. typ. max.
Unit
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE - 13.0 - nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
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Rev.1.2,2013-05-22

IDW40E65D2
EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C,
- 36 - ns
Diode reverse recovery charge
VR=400V,
Qrr - 0.40 - µC
IF=40.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs
- 22.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -10000 - A/µs
Diode reverse recovery time trr Tvj=25°C,
- 75 - ns
Diode reverse recovery charge
VR=400V,
Qrr - 0.13 - µC
IF=40.0A,
Diode peak reverse recovery current Irrm diF/dt=200A/µs
- 2.9 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -54 - A/µs
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time trr Tvj=175°C,
- 60 - ns
Diode reverse recovery charge
VR=400V,
Qrr - 1.14 - µC
IF=40.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs
- 32.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -8700 - A/µs
Diode reverse recovery time trr Tvj=125°C,
- 83 - ns
Diode reverse recovery charge
VR=400V,
Qrr - 0.32 - µC
IF=40.0A,
Diode peak reverse recovery current Irrm diF/dt=200A/µs
- 5.6 - A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt - -51 - A/µs
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Rev.1.2,2013-05-22

IDW40E65D2
EmitterControlledDiode
180
1
Ptot,POWERDISSIPATION[W]
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i: 1 2 3 4 5 6
ri[K/W]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E-3
τi[s]: 1.4E-5 2.4E-4 1.8E-3 7.8E-3 0.1290993 2.085894
0.01
1E-6 1E-5 1E-4 0.001 0.01 0.1
tp,PULSEWIDTH[s]
Figure 2. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
120
110
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
1.4
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
trr,REVERSERECOVERYTIME[ns]
100
90
80
70
60
50
40
30
20
Qrr,REVERSERECOVERYCHARGE[µC]
1.2
1.0
0.8
0.6
0.4
0.2
10
0
0 250 500 750 1000 1250 1500 1750 2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Typicalreverserecoverytimeasafunctionof
diodecurrentslope
(VR=400V)
6
0.0
0 250 500 750 1000 1250 1500 1750 2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 4. Typicalreverserecoverychargeasafunction
ofdiodecurrentslope
(VR=400V)
Rev.1.2,2013-05-22

IDW40E65D2
EmitterControlledDiode
50
45
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
0
-2000
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
Irrm,REVERSERECOVERYCURRENT[A]
40
35
30
25
20
15
10
5
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-4000
-6000
-8000
-10000
-12000
-14000
0
0 250 500 750 1000 1250 1500 1750 2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typicalpeakreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
-16000
0 250 500 750 1000 1250 1500 1750 2000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 6. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
120
110
100
Tj=25°C
Tj=175°C
2.50
2.25
IF=20A
IF=40A
IF=80A
IF,FORWARDCURRENT[A]
90
80
70
60
50
40
30
VF,FORWARDVOLTAGE[V]
2.00
1.75
1.50
1.25
1.00
20
10
0.75
0
0.0 0.5 1.0 1.5 2.0 2.5
VF,FORWARDVOLTAGE[V]
Figure 7. Typicaldiodeforwardcurrentasafunctionof
forwardvoltage
0.50
0 25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 8. Typicaldiodeforwardvoltageasafunctionof
junctiontemperature
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Rev.1.2,2013-05-22

IDW40E65D2
EmitterControlledDiode
PG-TO247-3
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Rev.1.2,2013-05-22

IDW40E65D2
EmitterControlledDiode
a
b
a
b
t
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Rev.1.2,2013-05-22

IDW40E65D2
EmitterControlledDiode
RevisionHistory
IDW40E65D2
Revision:2013-05-22,Rev.1.2
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2013-03-14 Preliminary data sheet
1.2 2013-05-22 IFSM
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Publishedby
InfineonTechnologiesAG
81726Munich,Germany
81726München,Germany
©2013InfineonTechnologiesAG
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Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
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endangered.
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Rev.1.2,2013-05-22