Low Pressure Chemical Vapor Deposition Dr. Lynn Fuller Bruce ...
Low Pressure Chemical Vapor Deposition Dr. Lynn Fuller Bruce ...
Low Pressure Chemical Vapor Deposition Dr. Lynn Fuller Bruce ...
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LPCVD Recipes<br />
4” LPCVD POLYSILICON FOR CMOS<br />
Polysilicon <strong>Deposition</strong>:<br />
Temperature = 610 °C<br />
<strong>Pressure</strong> = 300 mTorr<br />
Gas = Silane (SiH4)<br />
Flow = 90 sccm<br />
Rate = 77 Å/min<br />
SiH4 = Si + 2H2<br />
Fronts<br />
device wafers<br />
every other slot<br />
Rochester Institute of Technology<br />
Microelectronic Engineering<br />
5 fillers every<br />
other slot<br />
1 filler<br />
at end<br />
© November 26, 2013 <strong>Dr</strong>. <strong>Lynn</strong> <strong>Fuller</strong> Page 16
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