Low Pressure Chemical Vapor Deposition Dr. Lynn Fuller Bruce ...
Low Pressure Chemical Vapor Deposition Dr. Lynn Fuller Bruce ...
Low Pressure Chemical Vapor Deposition Dr. Lynn Fuller Bruce ...
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LPCVD Recipes<br />
6” LTO RECIPE<br />
<strong>Low</strong> Temperature Silicon Oxide:<br />
Temperature = 400 °C SiH4 + O2 = SiO2 + 2H2<br />
<strong>Pressure</strong> = 250 mTorr<br />
Silane (SiH4)<br />
Flow = 40 sccm<br />
Oxygen (O2)<br />
Flow 48 sccm<br />
Rate = 70 Å/min +/- 10 Å/min<br />
7-26-00 LTO @425 °C gave deposition rate of 113 Å/min<br />
Rochester Institute of Technology<br />
Microelectronic Engineering<br />
© November 26, 2013 <strong>Dr</strong>. <strong>Lynn</strong> <strong>Fuller</strong> Page 24
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