BUZ 90 - Micropik

BUZ 90
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
G D S
Type V DS I D R DS(on) Package Ordering Code
BUZ 90 600 V 4.5 A 1.6 Ω TO-220 AB C67078-S1321-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
I D A
T C = 28 °C
4.5
Pulsed drain current
T C = 25 °C
I Dpuls
18
Avalanche current,limited by T jmax I AR 4.5
Avalanche energy,periodic limited by T jmax E AR 8 mJ
Avalanche energy, single pulse
I D = 4.5 A, V DD = 50 V, R GS = 25 Ω
L = 29 mH, T j = 25 °C
E AS
320
Gate source voltage V GS ± 20 V
Power dissipation
P tot W
T C = 25 °C
75
Operating temperature T j -55 ... + 150 °C
Storage temperature T stg -55 ... + 150
Thermal resistance, chip case R thJC ≤ 1.67 K/W
Thermal resistance, chip to ambient R thJA 75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 1 07/96

BUZ 90
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, I D = 0.25 mA, T j = 25 °C
Gate threshold voltage
V GS =V DS, I D = 1 mA
Zero gate voltage drain current
V DS = 600 V, V GS = 0 V, T j = 25 °C
V DS = 600 V, V GS = 0 V, T j = 125 °C
Gate-source leakage current
V GS = 20 V, V DS = 0 V
Drain-Source on-resistance
V GS = 10 V, I D = 2.8 A
V (BR)DSS
600 - -
V GS(th)
2.1 3 4
I DSS
-
-
0.1
10
1
100
I GSS
- 10 100
R DS(on)
- 1.5 1.6
V
µA
nA
Ω
Semiconductor Group 2 07/96

BUZ 90
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V DS ≥ 2 * I D * R DS(on)max, I D = 2.8 A
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time
V DD = 30 V, V GS = 10 V, I D = 2.6 A
R GS = 50 Ω
Rise time
V DD = 30 V, V GS = 10 V, I D = 2.6 A
R GS = 50 Ω
Turn-off delay time
V DD = 30 V, V GS = 10 V, I D = 2.6 A
R GS = 50 Ω
Fall time
V DD = 30 V, V GS = 10 V, I D = 2.6 A
R GS = 50 Ω
2.5 3.8 -
C iss
- 780 1050
C oss
- 110 170
C rss
- 40 70
t d(on)
- 20 30
t r
- 50 75
t d(off)
- 120 150
t f
- 70 90
S
pF
ns
Semiconductor Group 3 07/96

BUZ 90
Electrical Characteristics, at T j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T C = 25 °C
Inverse diode direct current,pulsed
T C = 25 °C
Inverse diode forward voltage
V GS = 0 V, I F = 8 A
Reverse recovery time
V R = 100 V, I F =l S, di F /dt = 100 A/µs
Reverse recovery charge
V R = 100 V, I F =l S, di F /dt = 100 A/µs
- - 4.5
I SM
- - 18
V SD
- 1.1 1.2
t rr
- 350 -
Q rr
- 3 -
A
V
ns
µC
Semiconductor Group 4 07/96

BUZ 90
Power dissipation
P tot = ƒ(T C )
Drain current
I D = ƒ(T C )
parameter: V GS
≥ 10 V
80
5.0
W
A
P tot
60
I D
4.0
3.5
50
3.0
40
2.5
30
2.0
1.5
20
1.0
10
0.5
0
0 20 40 60 80 100 120 °C 160
T C
0.0
0 20 40 60 80 100 120 °C 160
T C
Safe operating area
I D
= ƒ(V DS
)
parameter: D = 0.01, T C
= 25°C
10 2
Transient thermal impedance
Z th JC
= ƒ(t p
)
parameter: D = t p
/ T
10 1
A
t p
= 15.0µs
K/W
10 0
10 1
100 µs
10 0
R DS(on) = V DS / I D
1 ms
10 -1
D = 0.50
0.20
0.10
10 ms
10 -2
0.05
0.02
0.01
10 -1
I D
10 0 10 1 10 2 10 3
DC
V
Z thJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
single pulse
10 -3
s
V DS
t p
Semiconductor Group
5 07/96

BUZ 90
Typ. output characteristics
I D = ƒ(V DS )
parameter: t p
= 80 µs
Typ. drain-source on-resistance
R DS (on) = ƒ(I D )
parameter: V GS
l
10
A
P tot = 75W
kj
i h
g
f
e
5.0
Ω
a
b
c
I D
8
7
V GS
[V]
a 4.0
b 4.5
d c 5.0
4.0
3.5
d 5.5
6
e 6.0
3.0
5
4
3
2
f 6.5
g 7.0
c
h 7.5
i 8.0
j 9.0
k 10.0
l 20.0
b
R DS (on)
2.5
2.0
1.5
1.0
V GS [V] =
k
d
e
f
g
h
j
i
1
0
0 5 10 15 20 25 30 35 V 45
V DS
a
0.5
V GS [V] =
a b
4.0 4.5 5.0
c
5.5
d
6.0
e
6.5
f
7.0
g
7.5
h
8.0
i
9.0
j
10.0
k
20.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 A 8.0
I D
Typ. transfer characteristics I D = f (V GS )
parameter: t p = 80 µs
V DS ≥2 x I D x R DS(on)max
I D
5.0
g fs
4.0
Typ. forward transconductance g fs = f (I D )
parameter: t p = 80 µs,
V DS ≥2 x I D x R DS(on)max
6.0
5.0
A
S
4.5
3.5
4.0
3.5
3.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
V GS
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0
I D
Semiconductor Group 6 07/96

BUZ 90
Drain-source on-resistance
R DS (on) = ƒ(T j )
parameter: I D = 2.8 A, V GS = 10 V
Gate threshold voltage
V GS (th) = ƒ(T j )
parameter: V GS
= V DS
, I D
= 1 mA
6.5
Ω
5.5
R DS (on) 5.0
4.5
4.6
V
4.0
3.6
3.2
98%
typ
4.0
2.8
3.5
3.0
2.5
2.0
1.5
1.0
98%
typ
2.4
2.0
1.6
1.2
0.8
V GS(th)
-60 -20 20 60 100 °C 160
2%
0.5
0.0
-60 -20 20 60 100 °C 160
T j
0.4
0.0
T j
Typ. capacitances
C = f (V DS )
parameter:V GS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode
I F = ƒ(V SD )
parameter: T j , t p = 80 µs
10 2
C
nF
A
10 0
C iss
10 -1
C oss
10 0
I F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
10 1
T j = 25 °C typ
T j = 150 °C typ
C rss
T j = 25 °C (98%)
T j = 150 °C (98%)
10 -2
0 5 10 15 20 25 30 V 40
V DS
10 -1
V SD
Semiconductor Group
7 07/96

BUZ 90
Avalanche energy E AS
= ƒ(T j
)
parameter: I D = 4.5 A, V DD = 50 V
R GS
= 25 Ω, L = 29 mH
Typ. gate charge
V GS = ƒ(Q Gate )
parameter: I D puls
= 7 A
340
16
mJ
280
V
E AS
240
V GS
12
200
10
0,2 V
DS max
0,8 V
DS max
160
8
120
6
80
4
40
2
0
20 40 60 80 100 120 °C 160
T j
0
0 10 20 30 40 nC 60
Q Gate
Drain-source breakdown voltage
V (BR)DSS = ƒ(T j )
710
V
680
V (BR)DSS
660
640
620
600
580
560
540
-60 -20 20 60 100 °C 160
T j
Semiconductor Group 8 07/96

BUZ 90
Package Outlines
TO-220 AB
Dimension in mm
Semiconductor Group 9 07/96