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24 3 CdTe 3.11: 662 keV () () 662 keV 662 keV
3.4. 25 3.12: () () S com /S pixel >0.4 0.4
Page 1 and 2: CdTe ISAS/JAXA oonuki@astro.is
Page 3 and 4: iii 1 3 2 CdTe/CdZnTe 7 2.
Page 5 and 6: v 1.1 . . . . . . . . . . . . .
Page 7: 1 1.1 . . . . . . . . . . . . .
Page 10 and 11: 4 1 1.1: NIST12 ɛ (µτ) e
Page 13 and 14: 7 2 CdTe/CdZnTe 2.1 CdTe/CdZnTe X
Page 15 and 16: 2.3. 9 electron component total ef
Page 17 and 18: 2.4. 11 0.5mm thick η 2mm thick 5
Page 19 and 20: 2.4. 13 d = 0.7 (W/2) d = W φ 0 (
Page 21 and 22: 15 3 CdTe 5 mm CdTe 137 Cs 662
Page 23 and 24: 3.1. 17 z = 0 z = 2.5 mm z = 1.25
Page 25 and 26: 3.2. 19 HV = 1000V (µτ)h = 0.000
Page 27 and 28: 3.3. 21 3.8: −20˚C 137 Cs 133
Page 29: 3.4. 23 3.4 x 662 keV 3.8
Page 33 and 34: 3.5. 27 3.5 2 CdTe/CdZnTe 1517
Page 35: 3.6. 29 3.16: 5 mm CdTe W/L 2
Page 38 and 39: 32 4 X 3. : +0.5 - 2.5 V 4. : +
Page 40 and 41: 34 4 X pixel 498 µm chip 1.3
Page 42 and 43: 36 4 X 4.6: ASIC ASIC 16 A/D
Page 44 and 45: 38 4 X 4.3.3 CdTe 10 9 cm ·
Page 46 and 47: 40 4 X −50˚C 57 Co HV
Page 48 and 49: 42 4 X 4.11: 4.4.2 HV X
Page 50 and 51: 44 4 X 4.14: 50610 42217(
Page 52 and 53: 46 4 X 4.17:
Page 54 and 55: 48 4 X 4.18: 241 Am 7 × 7 (
Page 56 and 57: 50 4 X 9500 9000 8500 total cou
Page 58 and 59: 52 4 X 4.6 CdTe CdZnTe 3 Pt
Page 60 and 61: 54 4 X 4.8 CdTe 2 ASICIn/Au
Page 63 and 64: 57 A 5mm 8 × 8 CdTe A.1 LSIVA3
Page 65 and 66: A.1. 59 A.1.2 VA32TA CdTe VA32TA
Page 67 and 68: A.2. 61 Input Buffer S/H Semigauss
Page 69: A.2. 63 A.8: −40 ˚C 57 Co 1000
Page 73 and 74: 67 1T. Takahashi, et al., “Wide-
Page 75: A.2. 69 32J. D. Eskin, H. H. Barre

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