Datasheet
Datasheet
Datasheet
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POLYSILICON MATERIALS<br />
GCL is a global leading supplier of both polysilicon and wafer. For polysilicon manufacturing, GCL adopts the<br />
“GCL-method” which is a proprietay production technology backed by patents, and utilize he closed-loop<br />
hydro-chlorination process to effectively recycle silicon tetrachloride and hydrochloride, the two main<br />
by-products of polysilicon production. IAs such, GCL not only effectively controls the environmental pollution<br />
caused by polysilicon production, but also significantly lowers its unit production cost.<br />
GCL provides high-quality solar grade and semiconductor grade/electronic grade polysilicon raw materials,<br />
with N-type resistivity of polysilicon reaching 200 ~ 500 ·cm, and purity reaching 9-nines to 11-nines.<br />
Product Specifications<br />
Appearance and Features<br />
Property<br />
Specification<br />
Qualified materials<br />
Polysilicon blocks or bars, of which quality indicators are in line with contractual<br />
requirements. The appearance and surface of the materials are compact and smooth.<br />
There may be cracks with depths below 3 mm but no interlayers exist.<br />
Appearance<br />
Coral materials<br />
Polysilicon blocks or bars. For materials with appearance and surface that are neither<br />
compact nor smooth or in which there are cracks with depths of above 3mm, if the<br />
quality of such materials is in line with contractual requirements, such materials shall<br />
be classified as coral materials regardless of ratios<br />
Wastes<br />
Silicon particles and materials with graphite with size below 3mm<br />
Miscellaneous items<br />
Silicon materials not classified as qualified materials, coral materials or wastes
Electrical Properties<br />
Grade Electronic Grade Solar Grade Ⅰ Solar GradeⅡ Solar GradeⅢ<br />
Conductivity Type/ Dopant<br />
N/phosphorus<br />
N/phosphorus<br />
N/phosphorus<br />
N/phosphorus<br />
Resistivity<br />
≥250 ·cm<br />
≥100 ·cm<br />
≥40 ·cm<br />
≥20 ·cm<br />
Resistivity<br />
≥1000 ·cm<br />
≥500 ·cm<br />
≥200 ·cm<br />
≥100 ·cm<br />
Brick Lifetime<br />
≥100 µs<br />
≥100 µs<br />
≥50 µs<br />
≥30 µs<br />
Oxygen Concentration<br />
≤1.0×10 17 atoms/cm 3<br />
≤1.0×10 17 atoms/cm 3<br />
≤1.0×10 17 atoms/cm 3<br />
≤1.5×10 17 atoms/cm 3<br />
Carbon Concentration<br />
≤2.5×10 16 atoms/cm 3<br />
≤2.5×10 16 atoms/cm 3<br />
≤4.0×10 16 atoms/cm 3<br />
≤4.5×10 16 atoms/cm 3<br />
Benefactor impurities concentration (P)<br />
≤0.3ppba<br />
≤1.5ppba<br />
≤3.76ppba<br />
≤7.74ppba<br />
Acceptor impurities concentration<br />
≤0.3ppba<br />
≤0.5ppba<br />
≤1.3ppba<br />
≤2.7ppba<br />
Total metal impurities:<br />
FeCrNiCuZn<br />
≤0.03ppmw<br />
≤0.05ppmw<br />
≤0.1ppmw<br />
≤0.2ppmw
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