BC307/308/309 - Datasheet Catalog
BC307/308/309 - Datasheet Catalog
BC307/308/309 - Datasheet Catalog
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Switching and Amplifier Applications<br />
• Low Noise: BC<strong>309</strong><br />
<strong>BC307</strong>/<strong>308</strong>/<strong>309</strong><br />
<strong>BC307</strong>/<strong>308</strong>/<strong>309</strong><br />
1<br />
TO-92<br />
1. Collector 2. Base 3. Emitter<br />
PNP Epitaxial Silicon Transistor<br />
Absolute Maximum Ratings T a =25°C unless otherwise noted<br />
Symbol Parameter Value Units<br />
V CES<br />
Collector-Emitter Voltage<br />
: <strong>BC307</strong><br />
: BC<strong>308</strong>/<strong>309</strong><br />
-50<br />
-30<br />
V<br />
V<br />
V CEO<br />
Collector-Emitter Voltage<br />
: <strong>BC307</strong><br />
: BC<strong>308</strong>/<strong>309</strong><br />
V EBO Emitter-Base Voltage -5 V<br />
I C Collector Current (DC) -100 mA<br />
P C Collector Power Dissipation 500 mW<br />
T J Junction Temperature 150 °C<br />
T STG Storage Temperature -55 ~ 150 °C<br />
-45<br />
-25<br />
V<br />
V<br />
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Electrical Characteristics T a =25°C unless otherwise noted<br />
Symbol Parameter Test Condition Min. Typ. Max. Units<br />
BV CEO Collector-Emitter Breakdown Voltage<br />
: <strong>BC307</strong><br />
: BC<strong>308</strong>/<strong>309</strong><br />
I C = -2mA, I B =0<br />
-45<br />
-25<br />
V<br />
V<br />
BV CES<br />
Collector-Emitter Breakdown Voltage<br />
: <strong>BC307</strong><br />
: BC<strong>308</strong>/<strong>309</strong><br />
I C = -10µA, V BE =0<br />
BV EBO Emitter-Base Breakdown Voltage I E = -10µA, I C =0 -5 V<br />
I CES Collector Cut-off Current<br />
: <strong>BC307</strong><br />
: BC<strong>308</strong>/<strong>309</strong><br />
V CE = -45V, V BE =0<br />
V CE = -25V, V BE =0<br />
-2<br />
-2<br />
-15<br />
-15<br />
nA<br />
nA<br />
h FE DC Current Gain V CE = -5V, I C = -2mA 120 8 0 0<br />
V CE (sat) Collector-Emitter Saturation Voltage I C = -10mA, I B = -0.5mA<br />
I C = -100mA, I B = -5mA -0.5<br />
V BE (sat) Collector-Base Saturation Voltage I C = -10mA, I B = -0.5mA<br />
I C = -100mA, I B = -5mA<br />
-50<br />
-30<br />
-0.7<br />
-0.85<br />
V<br />
V<br />
-0.3 V<br />
V<br />
V BE (on) Base-Emitter On Voltage V CE = -5V, I C = -2mA -0.55 -0.62 -0.7 V<br />
f T Current Gain Bandwidth Product V CE = -5V, I C = -10mA, f=50MHz 130 MHz<br />
C ob Output Capacitance V CB = -10V, I E =0, f=1MHz 6 pF<br />
C ib Input Capacitance V EB = -0.5V, I C =0, f=1MHz 12 pF<br />
NF Noise Figure<br />
: <strong>BC307</strong>/<strong>308</strong><br />
: BC<strong>309</strong><br />
: BC<strong>309</strong><br />
V CE = -5V, I C = -0.2mA,<br />
R G =2KΩ, f=1KHz<br />
V CE = -5V, I C = -0.2mA<br />
R G =2KΩ, f=30~15KHz<br />
2<br />
10<br />
4<br />
4<br />
dB<br />
dB<br />
dB<br />
V<br />
V<br />
<strong>BC307</strong>/<strong>308</strong>/<strong>309</strong><br />
h FE Classification<br />
Classification A B C<br />
h FE 120 ~ 220 180 ~ 460 380 ~ 800<br />
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Typical Characteristics<br />
I C<br />
[mA], COLLECTOR CURRENT<br />
-50<br />
-45<br />
I B<br />
= -400µA<br />
-40<br />
I B<br />
= -350µA<br />
-35<br />
I B<br />
= -300µA<br />
-30<br />
I B<br />
= -250µA<br />
-25<br />
I B<br />
= -200µA<br />
-20<br />
I B<br />
= -150µA<br />
-15<br />
I B<br />
= -100µA<br />
-10<br />
I B<br />
= -50µA<br />
-5<br />
hFE, DC CURRENT GAIN<br />
1000<br />
100<br />
10<br />
VCE = -5V<br />
<strong>BC307</strong>/<strong>308</strong>/<strong>309</strong><br />
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20<br />
1<br />
-0.1 -1 -10 -100<br />
V CE<br />
[V], COLLECTOR-EMITTER VOLTAGE<br />
IC[mA], COLLECTOR CURRENT<br />
Figure 1. Static Characteristic<br />
Figure 2. DC current Gain<br />
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE<br />
-10<br />
-1<br />
-0.1<br />
IC = -10 IB<br />
VBE(sat)<br />
VCE(sat)<br />
-0.01<br />
-0.1 -1 -10 -100<br />
IC[mA], COLLECTOR CURRENT<br />
-100<br />
-10<br />
-1<br />
VCE = -5V<br />
-0.1<br />
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2<br />
IC[mA], COLLECTOR CURRENT<br />
VBE[V], BASE-EMITTER VOLTAGE<br />
Figure 3. Base-Emitter Saturation Voltage<br />
Collector-Emitter Saturation Voltage<br />
Figure 4. Base-Emitter Capacitance<br />
Cob[pF], CAPACITANCE<br />
10<br />
f=1MHz<br />
IE = 0<br />
1<br />
-1 -10 -100<br />
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT<br />
1000<br />
100<br />
10<br />
VCE = -5V<br />
-1 -10<br />
VCB[V], COLLECTOR-BASE VOLTAGE<br />
IC[mA], COLLECTOR CURRENT<br />
Figure 5. Collector Output Capacitance<br />
Figure 6. Current Gain Bandwidth Product<br />
©2002 Fairchild Semiconductor Corporation<br />
Rev. A2, August 2002
Package Dimensions<br />
TO-92<br />
<strong>BC307</strong>/<strong>308</strong>/<strong>309</strong><br />
4.58 +0.25<br />
–0.15<br />
3.86MAX<br />
0.46 ±0.10<br />
1.27TYP<br />
[1.27 ±0.20]<br />
1.02 ±0.10<br />
0.38 +0.10<br />
–0.05<br />
1.27TYP<br />
[1.27 ±0.20]<br />
3.60 ±0.20<br />
(R2.29)<br />
(0.25) 14.47 ±0.40<br />
4.58 ±0.20<br />
0.38 +0.10<br />
–0.05<br />
Dimensions in Millimeters<br />
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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Advance Information<br />
Formative or In<br />
Design<br />
This datasheet contains the design specifications for<br />
product development. Specifications may change in<br />
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supplementary data will be published at a later date.<br />
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©2002 Fairchild Semiconductor Corporation Rev. I1
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