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Topological Insulators and Superconductors

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Experimental setup<br />

• High mobility samples<br />

of HgTe/CdTe quantum<br />

wells have been<br />

fabricated.<br />

• Because of the small<br />

b<strong>and</strong> gap, about several<br />

meV, one can gate dope<br />

this system from n to p<br />

doped regimes.<br />

• Two tuning parameters,<br />

the thickness d of the<br />

quantum well, <strong>and</strong> the<br />

gate voltage.<br />

•(Koenig et al, Science 2007)

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