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Smart Highside Power Switch

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Figure 5b: Open load: detection in ON-state, open<br />

load occurs in on-state<br />

BTS 410 D2<br />

Figure 6b: Undervoltage restart of charge pump<br />

V on<br />

V ON(CL)<br />

IN<br />

ST<br />

t d(ST OL1)<br />

t d(ST OL2)<br />

V<br />

OUT<br />

off-state<br />

on-state<br />

V bb(over)<br />

off-state<br />

V bb(u rst)<br />

V bb(o rst)<br />

I<br />

L<br />

normal<br />

open<br />

normal<br />

V<br />

bb(under)<br />

V bb(u cp)<br />

t<br />

charge pump starts at V bb(ucp) =5.6 V typ.<br />

V bb<br />

t d(ST OL1) = tbd µs typ., t d(ST OL2) = tbd µs typ<br />

Figure 7a: Overvoltage:<br />

Figure 6a: Undervoltage:<br />

IN<br />

IN<br />

V<br />

bb<br />

V<br />

bb<br />

V<br />

ON(CL) V bb(over)<br />

V bb(o rst)<br />

V<br />

bb(under)<br />

Vbb(u cp)<br />

V<br />

bb(u rst)<br />

V<br />

OUT<br />

VOUT<br />

ST<br />

ST CMOS<br />

t<br />

t<br />

if V bb > V bb(AZ) increase of V ST due to GND resistor voltage.<br />

Semiconductor Group 12

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