Smart Highside Power Switch

Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection 1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• CMOS diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
PROFET® BTS 410 D2
Product Summary
Overvoltage protection V bb(AZ) 65 V
Operating voltage Vbb(on) 4.7 ... 42 V
On-state resistance RON 220 mΩ
Load current (ISO) IL(ISO) 1.8 A
Current limitation IL(SCr) 5 A
Standard
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
5
TO-220AB/5
1
Straight leads
5
1
SMD
5
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
+ V bb
3
V Logic
2
IN
ESD
Voltage
sensor
Logic
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
Temperature
sensor
OUT
5
Load
4
ST
1
GND
Signal GND
Short circuit
detection
PROFET ®
Load GND
1) With external current limit (e.g. resistor R GND =150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Semiconductor Group 1 03.97

Pin Symbol Function
1 GND - Logic ground
BTS 410 D2
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
(Load, L)
O Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) V bb 65 V
Load dump protection 2) V LoadDump = U A + V s , U A = 13.5 V V
4) Load dump 100 V
R I
3)
= 2 Ω, R L = 6.6 Ω, t d = 400 ms, IN= low or high
Load current (Short circuit current, see page 4) I L self-limited A
Operating temperature range
T j
-40 ...+150 °C
Storage temperature range
T stg -55 ...+150
Power dissipation (DC), T C ≤ 25 °C P tot 50 W
Inductive load switch-off energy dissipation, single pulse
V bb = 12V, T j,start = 150°C, T C = 150°C const.
I L = 1.8 A, Z L = 2.3 H, 0 Ω: E AS 4.5 J
Electrostatic discharge capability (ESD)
(Human Body Model)
IN:
all other pins:
V ESD 1
2
kV
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC) V IN -0.5 ... +6 V
Current through input pin (DC)
I IN
±5.0 mA
Current through status pin (DC)
I ST ±5.0
see internal circuit diagrams page 6
Thermal Characteristics
--
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance
chip - case: R thJC
-- 2.5 K/W
junction - ambient (free air): R thJA -- -- 75
SMD version, device on PCB 5) : -- 35 --
2) Supply voltages higher than V bb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) R I = internal resistance of the load dump test pulse generator
4) V Load dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for V bb
connection. PCB is vertical without blown air.
Semiconductor Group 2

BTS 410 D2
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V bb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I L = 1.6 A
T j =25 °C:
T j =150 °C:
R ON -- 190
390
Nominal load current, ISO Norm (pin 3 to 5)
V ON = 0.5 V, T C = 85 °C I L(ISO) 1.6 1.8 -- A
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, V IN = 0, see diagram
I L(GNDhigh) -- -- 1 mA
page 7, Tj =-40...+150°C
Turn-on time IN to 90% V OUT :
Turn-off time IN to 10% V OUT :
R L = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% V OUT , R L = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% V OUT , R L = 12 Ω, Tj =-40...+150°C
t on
12
t off 5
--
--
220
440
125
85
mΩ
µs
dV /dt on -- -- 3 V/µs
-dV/dt off -- -- 6 V/µs
Operating Parameters
Operating voltage 6) Tj =-40...+150°C: V bb(on) 4.7 -- 42 V
Undervoltage shutdown
Tj =25°C: V bb(under) 2.9 -- 4.5 V
Tj =-40...+150°C:
2.7 -- 4.7
Undervoltage restart Tj =-40...+150°C: V bb(u rst) -- -- 4.9 V
Undervoltage restart of charge pump
V bb(ucp) -- 5.6 6.0 V
see diagram page 12
Undervoltage hysteresis
∆V bb(under) = V bb(u rst) - V bb(under)
∆V bb(under) -- 0.1 -- V
Overvoltage shutdown Tj =-40...+150°C: V bb(over) 42 -- 52 V
Overvoltage restart Tj =-40...+150°C: V bb(o rst) 40 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆V bb(over) -- 0.1 -- V
Overvoltage protection 7) Tj =-40...+150°C: V bb(AZ) 65 70 -- V
I bb =4 mA
Standby current (pin 3)
V IN =0, I ST ≤0,
Leakage output current (included in I bb(off) )
VIN=0
Operating current (Pin 1) 8) , V IN =5 V,
Tj =-40...+150°C
T j =-40...+25°C:
T j = 150°C:
Semiconductor Group 3
I bb(off) --
--
10
18
15
25
µA
I L(off) -- -- 20 µA
I GND -- 1 2.1 mA
6) At supply voltage increase up to V bb = 5.6 V typ without charge pump, V OUT ≈V bb - 2 V
7) Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.

BTS 410 D2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V bb = 12 V unless otherwise specified min typ max
Protection Functions
Initial peak short circuit current limit (pin 3 to 5) 9) ,
( max 450 µs if V ON > V ON(SC) )
T j =-40°C:
T j =25°C:
T j =+150°C:
Overload shutdown current limit
I L(SCp)
I L(SCr)
9 -- 23
-- 12 --
4 -- 15
V ON = 8 V, T j = T jt (see timing diagrams, page 10) -- 5 -- A
Short circuit shutdown delay after input pos. slope
V ON > V ON(SC) ,
T j =-40..+150°C: t d(SC) -- -- 450 µs
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at V OUT = V bb - V ON(CL) I L = 40 mA, T j =-40..+150°C: V ON(CL) 61 68 73 V
I L = 1 A, T j =-40..+150°C: -- -- 75
Short circuit shutdown detection voltage
(pin 3 to 5) V ON(SC) -- 8.5 -- V
Thermal overload trip temperature T jt 150 -- -- °C
Thermal hysteresis ∆T jt -- 10 -- K
Reverse battery (pin 3 to 1) 10) -V bb -- -- 32 V
A
Diagnostic Characteristics
Open load detection current
(on-condition)
T j =-40 ..150°C:
I L (OL)
2 -- 150
mA
8) Add I ST , if I ST > 0, add I IN , if V IN >5.5 V
9) Short circuit current limit for max. duration of t d(SC) max =450 µs, prior to shutdown
10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
Semiconductor Group 4

BTS 410 D2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V bb = 12 V unless otherwise specified min typ max
Input and Status Feedback 11)
Input turn-on threshold voltage T j =-40..+150°C: V IN(T+) 1.5 -- 2.4 V
Input turn-off threshold voltage T j =-40..+150°C: V IN(T-) 1.0 -- -- V
Input threshold hysteresis ∆ V IN(T) -- 0.5 -- V
Off state input current (pin 2), V IN = 0.4 V I IN(off) 1 -- 30 µA
On state input current (pin 2), V IN = 5 V I IN(on) 10 25 70 µA
Status invalid after positive input slope
t d(ST SC) -- -- 450 µs
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
t d(ST) 300 -- 1400 µs
(open load)
Tj=-40 ... +150°C:
Status output (CMOS)
T j =-40...+150°C, I ST = - 50 µA:
T j =-40...+150°C, I ST = +1.6 mA:
Max. status current for
current source (out):
valid status output, current sink (in) :
T j =-40...+150°C
V ST(high)
12)
V ST(low)
-I ST
+I ST
13)
4.4
--
--
--
5.1
--
--
--
6.5
0.4
0.25
1.6
V
mA
11) If a ground resistor R GND is used, add the voltage drop across this resistor.
12) VSt high ≈ V bb during undervoltage shutdown
13) No current sink capability during undervoltage shutdown
Semiconductor Group 5

BTS 410 D2
Truth Table
Normal
operation
Open load
Input- Output Status
level level 412
B2
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
14)
H
L
L
H
H
L
L
L
L
L
L
410
D2
H H
H H
L H
H L
H H
L L
L H
H H (L 15) )
L L
L L
L 16) L 16)
L 16) L 16)
L L
L L
410
E2/F2
H
H
H
L
H
L
H
H (L 15) )
L
L
H
H
H
H
410
G2
H
H
H
L
H
H
H
H (L 15) )
L
L
H
H
H
H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
Status output
410
H2
H
H
L
H
H
L
L
H
L
L
H
H
H
H
I bb
3
I IN
V
IN bb
2
I L V ON
PROFET OUT
I ST
5
ST
4
V V GND
IN ST
V 1
bb I GND
V OUT
R GND
Input circuit (ESD protection)
GND
V Logic
ESD-
ZDI1
ZDI2
ESD-
ZD
Zener diode: 6 V typ., max 5.0 mA, V Logic 5 V typ,
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
ST
IN
R
I
Short circuit
to GND
Short circuit
to V bb
Overtemperature
Undervoltage
Overvoltage
I
I
GND
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
14) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
15) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
16) No current sink capability during undervoltage shutdown
Semiconductor Group 6

BTS 410 D2
Short circuit detection
Fault Condition: V ON > 8.5 V typ.; IN high
Open-load detection
ON-state diagnostic condition: V ON < R ON * I L(OL) ; IN
high
+ V bb
+ V bb
V
ON
ON
V ON
Logic
unit
Short circuit
detection
OUT
Logic
unit
Open load
detection
OUT
Inductive and overvoltage output clamp
+ V bb
V Z
GND disconnect
V ON
3
GND
VON clamped to 68 V typ.
PROFET
OUT
2
4
IN
ST
V
bb
PROFET
GND
OUT
5
V V V 1
bb IN ST
V GND
Overvolt. and reverse batt. protection
R IN
R ST
IN
ST
V Z1
Logic
R GND
V Z2
PROFET
GND
Signal GND
+ V bb
V Z1 = 6.2 V typ., V Z2 = 70 V typ., R GND = 150 Ω, R IN ,
RST= 15 kΩ
Any kind of load. In case of Input=high is V OUT ≈ V IN - V IN(T+) .
Due to V GND >0, no V ST = low signal available.
GND disconnect with GND pull up
3
V
IN bb
2
PROFET OUT
5
4
ST
GND
V V IN ST
V GND
1
Any kind of load. If V GND > VIN - V IN(T+) device stays off
Due to V GND >0, no V ST = low signal available.
Semiconductor Group 7

Vbb disconnect with energized inductive
load
high
IN
ST
V bb
1
2
4
3
V
bb
PROFET
GND
OUT
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive load
5
with an approximate solution for R L > 0 Ω:
BTS 410 D2
E AS = I L· L
2·R bb L·(V + |V I
OUT(CL)|)· ln L·R L
(1+
|V OUT(CL) | )
Maximum allowable load inductance for
a single switch off
L = f (I L ); T j,start = 150°C,T C = 150°C const.,
V bb = 12 V, R L = 0 Ω
L [mH]
10000
1000
100
high
V bb
2
4
S
IN
ST
3
V
bb
PROFET
GND
1
OUT
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
E bb
5
D
10
1
1 2 3 4 5 6
I L [A]
Typ. transient thermal impedance chip case
Z thJC = f(t p , D), D=t p /T
Z thJC [K/W]
10
E AS
IN
V
bb
E Load
1
PROFET
OUT
=
ST
GND
Energy stored in load inductance:
L
Z L { RL
E
L
E R
0.1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
E L = 1 /2·L·I 2 L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E AS = E bb + E L - E R = ∫ V ON(CL)·i L (t) dt,
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
t p [s]
Semiconductor Group 8

Options Overview
BTS 410 D2
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 Ω in GND connection, protection against loss of
ground
Type BTS 412 B2 410D2 410E2 410F2 410G2 410H2 307 308
Logic version B D E F G H
Overtemperature protection with hysteresis
Tj >150 °C, latch function 17)18)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
switches off when V ON >3.5 V typ. and V bb > 7 V
typ 17) (when first turned on after approx. 150 µs)
switches off when V ON >8.5 V typ. 17)
(when first turned on after approx. 150 µs)
Achieved through overtemperature protection
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
X X X X
X
X
X
X X X X
X
X
X
X
X
X
X X X
Undervoltage shutdown with auto restart X X X X X X X X
Overvoltage shutdown with auto restart 19) X X X X X X - X
Status feedback for
overtemperature
short circuit to GND
short to V bb
open load
undervoltage
overvoltage
Status output type
CMOS
Open drain
X
X
X
X
X
X
X
X
X
- 20)
X
X
X
X
X
X
- 20)
X
-
-
X
X
- 20)
X
-
-
X
-
- 20)
X
-
-
X
X
X
X
-
-
X
X
X
X
X
-
X X X X X X
Output negative voltage transient limit
(fast inductive load switch off)
to V bb - V ON(CL) X X X X X X X X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
X X X
X
X
X
X
-
-
X X X X X
Protection against loss of GND X X X X X X X X
17) Latch except when Vbb -V OUT < V ON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT ≠
0 V only if forced externally). So the device remains latched unless V bb < V ON(SC)
(see page 4). No latch
between turn on and t d(SC) .
18) With latch function. Reseted by a) Input low, b) Undervoltage
19) No auto restart after overvoltage in case of short circuit
20) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
Semiconductor Group 9

Timing diagrams
Figure 1a: V bb turn on:
Figure 2b: Switching an inductive load
BTS 410 D2
IN
IN
V
bb
t d(bb IN)
ST
t d(ST)
*)
V
OUT
V
OUT
A
ST CMOS
A
in case of too early VIN=high the device may not turn on (curve A)
t d(bb IN) approx. 150 µs
Figure 2a: Switching a lamp,
t
I
L
I L(OL)
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Turn on into short circuit,
t
IN
IN
ST
ST
V
OUT
V
OUT
t d(SC)
I
L
I
L
t
t
td(SC) approx. -- µs if V bb - V OUT > 8.5 V typ.
Semiconductor Group 10

Figure 3b: Turn on into overload,
IN
Figure 4a: Overtemperature,
Reset if (IN=low) and (T j

Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
BTS 410 D2
Figure 6b: Undervoltage restart of charge pump
V on
V ON(CL)
IN
ST
t d(ST OL1)
t d(ST OL2)
V
OUT
off-state
on-state
V bb(over)
off-state
V bb(u rst)
V bb(o rst)
I
L
normal
open
normal
V
bb(under)
V bb(u cp)
t
charge pump starts at V bb(ucp) =5.6 V typ.
V bb
t d(ST OL1) = tbd µs typ., t d(ST OL2) = tbd µs typ
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
V
bb
V
bb
V
ON(CL) V bb(over)
V bb(o rst)
V
bb(under)
Vbb(u cp)
V
bb(u rst)
V
OUT
VOUT
ST
ST CMOS
t
t
if V bb > V bb(AZ) increase of V ST due to GND resistor voltage.
Semiconductor Group 12

Figure 9a: Overvoltage at short circuit shutdown:
BTS 410 D2
IN
V
bb
V bb(o rst)
V
OUT
Output short to GND
short circuit shutdown
I L
ST
t
Overvoltage due to power line inductance. No overvoltage autorestart
of PROFET after short circuit shutdown.
Semiconductor Group 13

Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 410 D2
Ordering code
Q67060-S6101-A2
BTS 410 D2
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS410D2 E3062A T&R: Q67060-S6101-A4
TO-220AB/5, Option E3043 Ordering code
BTS 410 D2 E3043
Q67060-S6101-A3
Semiconductor Group 14