Six IGBTMOD™ NF-Series Module CM75TL-24NF - Powerex

CM75TL-24NF
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Six IGBTMOD
NF-Series Module
75 Amperes/1200 Volts
E
F
G
H
A
D
J
J
M
K
N
P
B
CN-7
CN-8
N
C
V
L
K
K
NC
NC
NC
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.72 120.0
B 2.17 55.0
C 1.39 35.0
D 4.17±0.02 106.0±0.5
E 0.43 11.0
F 0.28 7.0
G 0.54 13.62
H 1.61 40.78
J 0.67 17.0
K 0.47 12.0
L M5 M5
M 0.22 Dia. Dia. 5.5
T
U
UP-1
UP-2
CN-5
CN-6
Housing Types (J.S.T. Mfg. Co. Ltd.)
AA – B8P-VH-FB-B
AB – B2P-VH-FB-B
P
U
S
8 1 1 1 1
CN UP VP WP
K
AA
R
K
R
VP-1
VP-2
V
CN-3
CN-4
K
AB
B U V W
R
K
WP-1
WP-2
W
CN-1
CN-2
Q
Y
N
X
B
P
W
Dimensions Inches Millimeters
N 1.23 32.0
P 0.47 11.75
Q 0.53 13.5
R 0.91 23.0
S 0.87 22.0
T 0.76 19.75
U 0.42 10.75
V 0.87+0.04/-0.02 22.0+1.0/-0.5
W 0.91 23.2
X 0.63 16.0
Y 0.12 3.0
Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration,
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e. CM75TL-24NF
is a 1200V (V CES ), 75 Ampere Six-
IGBTMOD Power Module.
Type Current Rating V CES
Amperes Volts (x 50)
CM 75 24
10/10 Rev. 1
1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TL-24NF
Six IGBTMOD NF-Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Characteristics Symbol CM75TL-24NF Units
Power Device Junction Temperature T j -40 to 150 °C
Storage Temperature T stg -40 to 125 °C
Collector-Emitter Voltage (G-E Short) V CES 1200 Volts
Gate-Emitter Voltage (C-E Short) V GES ±20 Volts
Collector Current (T C = 87°C)* I C 75 Amperes
Peak Collector Current (Tj ≤ 150°C) I CM 150** Amperes
Emitter Current*** I E 75 Amperes
Peak Emitter Current*** I EM 150** Amperes
Maximum Collector Dissipation (T C = 25°C, T j < 150°C) P C 520 Watts
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M5 Main Terminal Screws — 31 in-lb
Module Weight (Typical) — 350 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V ISO 2500 Volts
Electrical and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I CES V CE = V CES , V GE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage V GE(th) I C = 7.5mA, V CE = 10V 6 7 8 Volts
Gate Leakage Current I GES V GE = V GES , V CE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage V CE(sat) I C = 75A, V GE = 15V, T j = 25°C — 2.1 3.0 Volts
I C = 75A, V GE = 15V, T j = 125°C — 2.4 — Volts
Input Capacitance C ies — — 11.5 nf
Output Capacitance C oes V CE = 10V, V GE = 0V — — 1.0 nf
Reverse Transfer Capacitance C res — — 0.23 nf
Total Gate Charge Q G V CC = 600V, I C = 75A, V GE = 15V — 338 — nC
Inductive Turn-on Delay Time t d(on) — — 100 ns
Load Turn-on Rise Time t r V CC = 600V, I C = 75A, — — 50 ns
Switch Turn-off Delay Time t d(off) V GE1 = V GE2 = 15V, — — 300 ns
Time Turn-off Fall Time t f R G = 4.2Ω, I E = 75A, — — 350 ns
Reverse Recovery Time*** t rr Inductive Load Switching Operation — — 120 ns
Reverse Recovery Charge*** Qrr — 3.0 — µC
Emitter-Collector Voltage*** V EC I E = 75A, V GE = 0V — — 3.8 Volts
*T C , T f measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TL-24NF
Six IGBTMOD NF-Series Module
75 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case* R th(j-c) Q Per IGBT 1/6 Module — — 0.24 °C/W
Thermal Resistance, Junction to Case* R th(j-c) D Per FWDi 1/6 Module — — 0.36 °C/W
Contact Thermal Resistance R th(c-f) Per 1/6 Module, Thermal Grease Applied — — — °C/W
External Gate Resistance R G 4.2 — 63 Ω
*T C , T f measured point is just under the chips.
COLLECTOR CURRENT, I C
, (AMPERES)
150
100
50
OUTPUT CHARACTERISTICS
(TYPICAL)
V GE = 20V
15
13
T j = 25°C
9
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, V CE
, (VOLTS)
12
11
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V CE(sat) , (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
3
2
1
0
0
V GE = 15V
T j = 25°C
T j = 125°C
50 100
COLLECTOR-CURRENT, I C , (AMPERES)
150
COLLECTOR-EMITTER
SATURATION VOLTAGE, V CE(sat) , (VOLTS)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
8
6
4
2
T j = 25°C
I C = 150A
I C = 75A
I C = 30A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
EMITTER CURRENT, I E , (AMPERES)
10 3
10 2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T j = 25°C
T j = 125°C
CAPACITANCE, C ies , C oes , C res , (nF)
10 2
10 1
10 0
V GE = 0V
CAPACITANCE VS. V CE
(TYPICAL)
10 1 0 1 2 3 4 5
EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)
10 -1
10 -2
10 1
C ies
C oes
C res
SWITCHING TIME, (ns)
10 2
10 1
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10 3 10 0 10 1
V CC = 600V
V GE = ±15V
R G = 4.2Ω
T j = 125°C
Inductive Load
t d(off)
t d(on)
t f
10 2
t r
10 0
10 -1 10 0 10 2
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR CURRENT, I C , (AMPERES)
10/10 Rev. 1
3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TL-24NF
Six IGBTMOD NF-Series Module
75 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. V GE
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
REVERSE RECOVERY TIME, t rr , (ns)
10 3 10 3
V CC = 600V
V GE = ±15V
R G = 4.2Ω
T j = 25°C
Inductive Load
I rr
t
10 2
rr
10 2
10 1 10 1
10 0 10 1
10 2
EMITTER CURRENT, I E , (AMPERES)
REVERSE RECOVERY CURRENT, I rr , (AMPERES)
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
20
16
12
8
4
0
0
I C = 75A
V CC = 400V
V CC = 600V
120 240 360 480 600
GATE CHARGE, Q G , (nC)
SWITCHING LOSS, E SW(on) , E SW(off) , (mJ/PULSE)
10 1 V CC = 600V
V GE = ±15V
R G = 4.2Ω
T j = 125°C
Inductive Load
C Snubber at Bus
10 0
10 -1 10 0 10 1
E SW(on)
E SW(off)
COLLECTOR CURRENT, I C , (AMPERES)
10 2
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS, E SW(on) , E SW(off) , (mJ/PULSE)
10 2 V CC = 600V
V GE = ±15V
I C = 75A
T j = 125°C
Inductive Load
C Snubber at Bus
10 1
10 0 10 0 10 1
GATE RESISTANCE, R G , (Ω)
E SW(on)
E SW(off)
10 2
REVERSE RECOVERY
SWITCHING LOSS, E rr , (mJ/PULSE)
10 1 E rr
10 0
V CC = 600V
V GE = ±15V
R G = 4.2Ω
T j = 125°C
Inductive Load
C Snubber at Bus
10 -1 10 0 10 1
10 2
EMITTER CURRENT, I E , (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, E rr , (mJ/PULSE)
10 2 V CC = 600V
V GE = ±15V
I E = 75A
T j = 125°C
Inductive Load
C Snubber at Bus
10 1
E rr
10 0 10 0 10 1
GATE RESISTANCE, R G , (Ω)
10 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c')
Z th = R th • (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10 0 10 -3 10 -2 10 -1 10 0 10 1
10 -1
10 -1
Single Pulse
T C = 25°C
Per Unit Base =
R th(j-c) =
10 -2 0.24°C/W
10 -2
(IGBT)
R th(j-c) =
0.36°C/W
(FWDi)
10 -3 10 -3
10 -5 10 -4 10 -3
TIME, (s)
4 10/10 Rev. 1